BUZ 21 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 100 V 21 A 0.085 TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 C Values Unit A 21 IDpuls Pulsed drain current TC = 25 C 84 Avalanche current,limited by Tjmax IAR 21 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 11 mJ EAS ID = 21 A, VDD = 25 V, RGS = 25 L = 340 H, Tj = 25 C 100 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 75 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1.67 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 150 / 56 1 01/97 BUZ 21 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 100 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 100 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 100 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 13 A Semiconductor Group nA - 2 0.065 0.085 01/97 BUZ 21 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 13 A Input capacitance 8 pF - 1000 1300 - 300 530 - 150 240 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 11 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 25 40 - 50 75 - 160 210 - 80 110 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 01/97 BUZ 21 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 84 V 1.3 1.7 trr ns - 150 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 21 - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 42 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 0.48 - 01/97 BUZ 21 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 22 80 A W Ptot ID 60 18 16 14 50 12 40 10 30 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 160 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 3 10 1 A ID C TC K/W ZthJC t = 22.0s p 10 2 10 0 /ID = R VD S 100 s n) (o DS 1 ms 10 1 10 -1 D = 0.50 0.20 10 ms 0.10 10 0 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 10 0 10 1 V 10 10 2 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 01/97 0 BUZ 21 Typ. output characteristics ID = (VDS) Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s 50 0.26 Ptot = 75W l A k j i 40 g 35 30 4.0 b 4.5 c 5.0 d 5.5 e 6.0 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 e 20 d 15 a f f 25 0.16 0.14 0.10 5 6 g h 0.08 i 0.06 a 4 f 0.12 0.02 3 e 0.18 b 5 2 d 0.22 0.04 1 c RDS (on) 0.20 c 10 0 0 b h VGS [V] ID a 7 V 0.00 0 9 j VGS [V] = a 5.0 4.0 4.5 5 b 5.5 c 6.0 10 d 6.5 15 e f 7.0 7.5 20 g 8.0 25 h i j 9.0 10.0 20.0 30 35 VDS A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 60 20 A S 50 ID 45 ID gfs 45 16 14 40 12 35 30 10 25 8 20 6 15 4 10 2 5 0 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 10 20 30 40 A ID 01/97 55 BUZ 21 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 13 A, VGS = 10 V 4.6 0.28 V 98% 4.0 0.24 VGS(th) RDS (on)0.22 0.20 3.6 typ 3.2 0.18 2.8 0.16 2.4 0.14 2.0 98% 0.12 0.10 2% 1.6 typ 0.08 1.2 0.06 0.8 0.04 0.4 0.02 0.00 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss Coss Crss 10 -1 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 01/97 3.0 BUZ 21 Avalanche energy EAS = (Tj ) parameter: ID = 21 A, VDD = 25 V RGS = 25 , L = 340 H Typ. gate charge VGS = (QGate) parameter: ID puls = 36 A 16 110 mJ V EAS 90 VGS 80 70 12 0,2 VDS max 10 0,8 VDS max 60 8 50 6 40 30 4 20 2 10 0 20 0 40 60 80 100 120 C 160 Tj 0 10 20 30 40 50 nC Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 120 V 116 V(BR)DSS114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 01/97 70