PNP Silicon Planar Medium Power Transistors ZTX550 ZTX551 FEATURES @ High power dissipation: 1W at T,,,, = 25C @ hee specified up to 1A @ High f;: Z00MHz typical DESCRIPTION These are plastic encapsulated, general Purpose transistors designed for smail and medium signal amplification from d.c. to radio frequencies. Application areas include: audio frequency amplifiers, driver and output stages, oscillators and general purpose switching. The E-line package is formed by transfer moulding a silicone plastic specially selected to provide a rugged one-piece encapsulation resistant to severe environments and allow the high junction temperature operation normally associated with metal can devices. E-line encapsulated devices are approved for use in military, industrial and professional equipments. ABSOLUTE MAXIMUM RATINGS Plastic E-Line (TO-92 Compatible) Alternative lead configurations are available as plug-in replacements of TO-5/39 and TO-18 metal can types, and for surface mounting. Complementary to ZTX450 and ZTX451 NPN transistors. The ZTX550 and ZTX551 transistors approved for use in military equipment are identified by the following numbers: BS9365 F143 & F144 - Category F. Parameter Symbol 2TX550 | ZTX551 Unit Collector-base voltage Veso - 60 -80 Vv Collector-emitter voltage VeceEo -45 -60 Vv Emitter-base voltage Vepo -5 Vv Peak pulse current (see note below) lom -2 A Continuous collector current lo -1 A Base current ts 200 mA Power dissipation at T,,.)= 25C Prot 1 w at Toase = 25C 2 Ww Operating and storage temperature range -55 to +200 c Note: Consult Safe Operating Area graph for conditions. SE71ZTX550 ZTX551 CHARACTERISTICS (at Tamp = 25C unless otherwise stated). ZTX550 ZTX551 Parameter Symbol Unit Conditions y Min. | Max. | Min. | Max. Collector-base leBo - -O.1 |] - - HA | Vep= 45V cut-off current - - - -0.1 | wA | Vog= 60V Emitter-base lego | -0.7 | - | ~0.1 |] wA | Vegp= -4V cut-off current Collector-emitter | Vee;sat) |-0.25] ~ |-0.35} V | tc=~-150mA, Ig= - 15mA* saturation voltage Base-emitter Voaeteat) | -1.1) - | -1.1 ] Vi | Ile=-150mA, lp= - 15mA* saturation voltage Collector-emitter | Veeoisus) | - 45} |{-60; Vie| Ic=~10mA* sustaining voitage Static forward hee 100] 300 | 50, 150 Ic= 150mA, Vege = ~- 10V* current transfer ratio 15 - 10 ~ Io= 1A, Vop= - 10V* Transition fr 150 - 150 - MHz | Ic= 50mA, Voge = 10V frequency f= 100MHz Output Cobo - 25 - 25 pF | Veg=10V, f= 1MHz capacitance *Measured under pulsed conditions. Pulse width = 300us. Duty cycle< 2%. MAXIMUM DISSIPATION (WATTS) 20 =40 60 80 TEMPERATURE C 300 Dissipation derating curve 200 3754/2 SE72ZTX550 ZTX551 COLLECTOR CURRENT (Ic) AMPS Or 1 10 100 COLLECTOR-EMITTER VOLTAGE (Vc_) VOLTS Safe operating area at T, 5 =25C (single pulse) 160 TRANSIENT 140 THERMAL IMPEDANCE C/W 120 100 80 60 40 20 100yus ims 10ms 100ms 1s 10s 100s PULSE WIDTH Maximum transient thermal impedance curves SE73ZTX550 ZTX551 -10 BASE- EMITTER SATURATION VOLTAGE Voc Isat! -08 (VOLTS) A an Lan Le i rT 0.6 ee -ImA -10mA -100mA 1A Collector Current (Ic} 4262/1 -O-4 -0-3 COLLECTOR- EMITTER SATURATION VOLTAGE Vee {sat} (VOLTS) -01 -ImA -10mA - 1A Collector Current (Ic) 4265 Typical collector-emitter saturation voltages plotted against collector current SE74ZTX550 ZTX551 V4 -12 4 BASE- EMITTER TURN-ON VOLTAGE Vee (ON) (VOLTS) -4+0 -O8 Pra = a ae ee Laagene -0:6 - - IMA -10mA -100mA TA -10A Collector Current (Ic) 4270 Typical base-emitter turn-on voltages plotted against collector current ZTX55) NORMALISED STATIC FORWARD CURRENT TRANSFER RATIO % Nee -imA - -100mA -1A Collector Current (Ic) 4268 Typical static forward current transfer ratio plotted against collector current SE75