1999. 11. 30 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC517
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC500 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150
Storage Temperature Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1.0mA, IC=0 10 - - V
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1.0 A
Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 1.0 A
DC Current Gain hFE IC=100mA, VCE=2V 30k - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=1mA - - 1.0 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=1mA - 1.5 2.0 V
Current Gain Bandwidth Product fTIC=100mA, VCE=2V, f=100MHz - 220 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 5.0 - pF
1999. 11. 30 2/2
BC517
Revision No : 1
10
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER SATURATION
CE(sat)
I - V h - I
C
COLLECTOR CURRENT I (mA)
10
FE
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V (V)
BE
I - V
FE C
-1 0
10 1
10 2
10 3
10
3
10
10 4
10 5
10 6
Ta=125 C
Ta=25 C
Ta=-55 C
C CE(sat)
VOLTAGE V (V)
0.20.40.60.81.01.2
0
1
10
2
10
3
10
Ta=125 C
Ta=25 C
Ta=-55 C
CBE
0
1
10
2
10
3
10
0.8 1.0 1.2 1.4 1.6 1.8
P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
COLLECTOR POWER DISSIPATION
25 50 75 100 125 150 175
100
200
300
400
500
625
700
