cl Am2168/Am2169 Advanced 4096 X 4 Static R/(W Random-Access Memory Devices DISTINCTIVE CHARACTERISTICS High speed access times as fast as 40 ns Fully static storage and interface circuitry No clocks or timing signals required Automatic power down when deselected (Am2168) Power dissipation - Am2168: 660 mW active, 165 mW standby Am2169: 660 mW @ Standard 20-pin, .300 inch dual-intine package @ Standard 20-pin rectangular ceramic leadiess chip carrier @ High output drive ~ Up to seven standard TTL loads or six Schottky TTL loads @ TTL-compatible interface levels GENERAL DESCRIPTION The Am2168 and Am2169 are high-performance, static, N- channel, read/write, random-access memories organized as 4096 words of 4 bits. Cperation is from a single 5 V supply, and all input/output levels are identical to standard TTL specifications. The Am2168 and Am2169 are the same except that the Am2168 offers an automatic Chip Enable (CE) power-down feature. The Am2168 remains in a ow-power standby mode as long as CE remains HIGH, thus reducing its power requirements from 660 mW to 165 mW maximum. The data read out is not destructive and has the same polarity as the input data. The device is packaged in either a .300 slim DIP or 20-pin leadiess chip carrier. The outputs of similar devices can be OR-tied and easy selection obtained by use of the TE. BLOCK DIAGRAM &o=1 aponess A, ~] purrers Ap ] As uN Ag-~| Row hg ~] DecavERs 128 x 32 128 x32 128 x 32 128 x 32 STORAGE MATRIX e } (am2168 ONLY) | | | ADORESS Ag =] GUFFERS hy ef Ang w] COLUMN SENSE AMPLIFIERS Au [Tt it ' (Am2168 ONLY) | t -____1_______+ we ____+ DATA BUFFERS Voc GND -~ | Oy UO2 O3 VOq BD006210 PRODUCT SELECTOR GUIDE Part Number Am2168-35 | Am2168-45 | Am2169-40 | Am2168-55 | Am2169-50 | Am2168-70 | Am2169-70 Maximum Access Time (ns) 35 45 40 55 50 70 70 hk A 120 120 1 1 1 0 to +70C icc (mA) 20 20 20 120 120 Igp* (mA) 30 30 N/A 30 N/A 30 N/A I A N/A 160 -55 to + 125C icc (mA) N/A 160 160 160 160 Igg* (mA) N/A 30 N/A 30 N/A 30 N/A *Am2168 Flashrite is a trademark of Advanced Micro Devices Inc. Publication # Rey. Amendment 04588 c 0 Issue Date: January 1989 4-71CONNECTION DIAGRAMS Top View DIPs as? 207 Veo (+5 1 Ag(j2 1917] As 46 (3 1e[-) Ae ar(y4 way As [_j5 16[7J Ao ACs 18[_] wo, 40]? 44 [7] voz An(_]s 13]-] VO3 ce Cie 12 |] UO4 Gno ("] 10 ut} We 0008450 Note: Pin 1 is marked for orientation. METALLIZATION AND PAD LAYOUT Address Designators External Internal Ao Ag Ay A Ag Aa a) Ag Ag Aq As As Ag Ag Az Az Ag Ag Ag Ait A1o A1o An Ag Die Size: 0.123 x 0.252 4-72 Am2168/Am2169ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of: a. Device Number : b. Speed Option (if applicable) c. Package Type d. Temperature Range e. Optional Processing AM2168. = P & | @. OPTIONAL PROCESSING Biank = Standard Processing B = Burn-in d. TEMPERATURE RANGE C = Commercial (0 to + 70C} c. PACKAGE TYPE P = 20-Pin Plastic DIP (PD 020) D = 20-Pin Geramic DIP (CO 020) L = 20-Pin Rectangular Ceramic Leadiess Chip Carrier (CLRO20) b. SPEED OPTION 35 = 35 ns 40 = 40 ns 45 = 45 ns 50 = 50 ns 55 = 55 ns 70 =70 ns a. DEVICE NUMBER/DESCRIPTION Am2168/Am2169 4096 x 4 Static A/W Random Access Memory Vaild Combinations AM2168-35 PC, PCB, DC, AM2169-40 DCB, LC, LCB AM2168-45 AM2168-55 Valid Combinations AM2169-50 PC, PGB, DC, DCB Valid Combinations list configurations planned to be AM2168-70 supported in volume for this device. Consult the local AMD 'AM2169-70 sales office to confirm availability of specific valid combinations, to check on newly released combinations, and to obtain additional data on AMD's standard military grade products. Am2168/Am2169 4-73MILITARY ORDERING INFORMATION APL Products AMD products for Aerospace and Defense applications are available in several packages and operating ranges. APL (Approved Products List) products are fully compliant with MiL-STD-883C requirements. The order number (Valid Combination) is formed by @ combination of: a. Device Number b. Speed Option (if applicable) c. Device Class d. Package Type @. Lead Finish A= Hot Solder Dip C=Gold d. PACKAGE TYPE R= 20-Pin Ceramic DIP (CD 020) U = 20-Pin Ceramic Chip Carrier (CLRO20) c. DEVICE CLASS /B = Class B s Pera raat 38s eaed __- a. DEVICE NUMBER/DESCRIPTION Am2168/Am2169 4096 x 4 Static R/W Random Access Memory Valid Combinations AM2168-45 Combinations AM2168-65 Valid AM2160-50 . Valid Combinations list configurations planned to be AM2168-70 supported in volume for this device. Consult the local AMD 'AM2169-70 sales office to contirm availability of specific valid 74M2160-45 fBRA, /BUA combinations or to check for newly released valid 7u2168-65 combinations. AM2160-50 Group A Tests AM2168-70 Group A tests consist of Subgroups awaree70 1, 2, 3, 7, 8, 9, 10, 11. PIN DESCRIPTION Ag-Ay1 Address inputs (inputs) V01-1/O4 Data in/Out Bus (Bidirectional Active The address input lines select the RAM location to be read HIGH) or written. These I/O lines provide the path for data to be read from or (input, Active LOW) written to the selected memory location. i device. p ; ' The Chip Enable selects the memory . Vec WE Write Enable (input, Active LOW) When Write Enable is LOW and Chip Enabie is also LOW, Vsg Ground data is written into the location specified on the address pins. 4-74 Am2168/Am2169ABSOLUTE MAXIMUM RATINGS* Supply Voltage ........ 2.2.00... cceeeeeeeseeees -0.5 V to +7.0 V All Signal Voltages.. 73.5 V to +70 V DC Output Current 0.2... cece cee tee een ee 20 mA Power Dissipation Cerdip & Leadiess Packages ................csecceeseeee 1.2 W Plastic Packages ...............ccccseeesessseeee eee eeeerseee 0.7 W Ambient Temperature with Power Applied Cerdip & Leadiess Packages............... -55 to +125C Plastic Packages................:.cc:.008 2-710 to +85C Storage Temperature . Cerdip & Leadiess Packages............... -65 to + 150C Plastic PackageS...............:cccseneeeeereee -55 to + 150C Stresses above those listad under ABSOLUTE MAXIMUM RATINGS may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. *Maximum ratings are for system design reference; parameters given may not be 100% tested. OPERATING RANGES (Note 4) Commercial (C) Devices Ambient Temperature (TA) .........::2sseseeeeee 0 to +70C Supply Voltage (VOC) .....-.::eceeenee eee 45 V to +55 V Military (M) Devices . Ambient Temperature (Ta) -.............06- -55 to + 125C Supply Voltage (VCC) .......ecccceeceeee +45 to +55 V Operating ranges define those limits between which the functionality of the device is guaranteed. DC CHARACTERISTICS over operating ranges unless otherwise specified (for APL Products, Group A, Subgroups 1, 2, 3 are tested unless otherwise noted) (Note 4) Am2168-55 & -70 Am2168-35, | Am2169-50 -45, & -40 & -70 Parameter Parameter Symbol Description Test Conditions Min. | Max. | Min. | Max. | Unit lou Output HIGH Current | Von = 2.4 V Voc = 4.5 V -4 -4 mA COM'L lo Output LOW Current | Vo_ = 0.4 V MIL mA Vin Input HIGH Voltage 2.2 6.0 2.2 6.0 v VIL Input LOW Voltage Note 3 -05 |] 08 | -05 | 08 Vv hx Input Load Current GND <V| <Voc -10 10 | -10 10 BA Output Leakage GND <Vo <Voc _ loz Current Output Disabled ~50 | 50 50 | 50 BA Cy | Input Capacitance Test Frequency = 1.0 MHz 5 5 pF = 25C, All Pins at 0 V, Voc =5 V Cc Input/Output Ta = 25C, Voc 7 7 vo Capacitance (Note 5) loc Voc Operating Max. Voc, CE < Vi COM'L 120 120 | nA Supply Current Output Open MIL N/A 160 Automatic TE Power COM'L 30 30 Isp Down Current Max. Voc, (CE 2 Vix) mA (Am2168 Only) MIL N/A 30 Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V and output loading of the specified IoL/loH and 30 pF load capacitance. Output timing reference is 1.5 V. 2. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write. 3. Vi_ voltages of less than -0.5 V on the |/O pins will cause the output current to exceed the maximum rating and thus should not exceed 30 seconds in duration. 4. For test and correlation purposes, ambient temperature is defined as the "Instant-on' case temperature. 5. At any given temperature and voltage condition, tyz is less than t_z and twz is less than tow for all devices. Transition is measured at 1.5 V on the input to VoH -500 mV and Voy +500 mV on the outputs using the load shown in B. under Switching Test Circuits. CL =5 pF. 6. Not 100% tested parameter; parameter guaranteed by characterization. Am2168/Am2169 4-75SWITCHING CHARACTERISTICS over operating ranges unless otherwise specified (for APL Products, Group A, Subgroups 9, 10, 11 are tested unless otherwise noted) (Note 1) Am2168-45, | Am2168-66, | Am2168-70, Am2168-25 | Am2169-40 | Am2169-50 | Am219-70 Parameter Parameter READ CYCLE 1 | tre Accrees, Vaid 0 nasrees Do Not Care Time 35 40 50 10 rs 2 | tea Address Veh to Data Out Valid Delay (Actress 95 40 50 70 ns 3 | tacs Chip Enable LOW to Data Out Vaid JATZ16 35 46 55 70 1 ne (Chip Enable Access Time) Am2168 20 5 30 Am2168 | (Notes 4, 5 5 5 5 a |uz Chip Enable LOW to Deta Out On 15) ; ; 3 5 jh Chip Enable HIGH to Data Out Off Stes 4 o | a | o | 2 | o | 2] o | 90 | os 6 Output hold time from addr COM'L 3 3 3 3 tou change MIL 1 1 1 7 | tep Crip Enable HIGH to Power-Down Am2168 |(Note 5) 35 5 55 70 ns @ | ey Chip Enable LOW to Power-Up Delay [Amz2168 [(Note 5) | _0 0 0 0 ns WRITE CYCLE | we Address Vaid to Address Do Not Care (Write 35 0 50 70 ne 40 | twp Wiite Enable LOW to Write Enable HIGH (Note 2) | 30 35 6 65 ne 1 | wr Write Enable HIGH to Address Do Not Care 0 0 0 0 ns 12 | wz Write Enable LOW to Output in Hi-Z Sine 4 o | ws | o | 1 | o | 2 | o | 2 | ne 13 | tow Data In Valid to Write Enable HIGH 20 20 25 35 78 14 | tox Data Hold Time 5 5 5 5 8 15 | tas Address Valid to Writs Enable LOW 0 0 0 0 ns 16 | tow Chip Enable LOW to Write Enable HIGH (Note 2) | 30 35 ry 5 ns 17 | tow Write Enable HIGH to Output in Low-Z gue + a 0 0 0 ns 16 | tw Address Vaid to End of Write 30 35 45 65 ns SWITCHING TEST CIRCUITS Yoe oata soa DATA swn out Out ( 30 pF ma 3b gewone mon 3 sor ~ -Te903500 = TC003510 A. Output Load B. Output Load for tz, tiz, tow, twz 4-76 Am2168/Am2169SWITCHING WAVEFORMS KEY TO SWITCHING WAVEFORMS WAVEFORM inputs OUTPUTS MUST BE WILL BE STEADY EADY MAY CHANGE CHANGING YW wat sees, WILE BE MAY CHANGE CHANGING LT FROMLTOH = Ghome Toy DON'T CARE: CHANGING: ANY CHANGE STATE PERMITTED UNKNOWN CENTER DOES NOT LENE IS HIGH APPLY IWIPEDANCE OFF STATE KS000010 DATA PREVIOUS DATA VALIO DATA VALID WF021270 Read Cycle No. 1 (WE HIGH, CE LOW) tac a x lj ______tacs Ler tz HIGH peur GH MAPEOANCE DATA VALID po toy | Yee - tee SUPPLY som _ som \ iso WF021280 Read Cycle No. 2 (WE HIGH, Address Valid Prior to CE Transition to LOW) Am2168/Am2169 4-77SWITCHING WAVEFORMS (Cont'd.) k twe ADDRESS y K | tow BANAT LITT TEITITLILLL, taw twa ~ tas __> twe we *A\ ft~C tow __ Ibn DATA WO DATA IN VALID [-o- twz p- tow ~| HIGH IMPEDANCE pata vo DATA UNDEFINED yore WF021970 Write Cycle No. 1 (WE Controlled) = ae ; taw twr we CANA LITTLE 7, tow _e}-+- on DATA UC DATA IN VALID [/~- twz i \! HIGH IMPEDANCE f Write Cycle No. 2 (CE Controlled) Note: If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. DATALO DATA UNDEFINED WF021300 4-78 Am2168/Am2169TYPICAL PERFORMANCE CURVES Supply Current Supply Current Output Source Current versus Supply Voltege versus Ambient Temperature versus Output Voltage 128 00 1 Voc = 6.0 100 Ty = C in ' q 30 . 4 3 5 2 N (208) 20 (2a) 0 44 46 48 50 52 54 56 00 -20 +20 +60 +100 +140 5 1 2 3 4 Yeo - jC Your - OP001880 OPoo1990 OPoo2000 Normalized Access Time Normatized Access Time Output Sink Current vereus Supply Voltage versus Ambient Temperature versus Output Voltage 4 13 12 WwW 10 os os a7 0.6 wa +2 wt 14 NORMALIZED Tay. Tacs NORMALIZED Tap, Tacs os 0.7 40 48 ae 58 80 00. -2 +2 +60 +100 +140 6 1 2 3 a Vec-V a-co Vour - OP002010 oP002020 OP002030 Typical Power-On Current Access Time Change Access Time Change veraus Power Supply versus Input Voltage versus Output Loading 2 T t Ty = 7C Voc Min. Maa: Mtacs 18 tga: Stagg - 98 te & ke 5 , Yoo - Am2168/Am2169 4-79