DG441/442 Vishay Siliconix Quad SPST CMOS Analog Switches FEATURES D D D D D D D D BENEFITS Low On-Resistance: 50 Low Leakage: 80 pA Low Power Consumption: 0.2 mW Fast Switching Action--tON: 150 ns Low Charge Injection--Q: -1 pC DG201A/DG202 Upgrades TTL/CMOS-Compatible Logic Single Supply Capability APPLICATIONS D D D D D D D D D Less Signal Errors and Distortion D Reduced Power Supply Requirements D Faster Throughput D Improved Reliability D Reduced Pedestal Errors D Simplifies Retrofit D Simple Interfacing Audio Switching Battery Powered Systems Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments DESCRIPTION The DG441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The DG441 has a normally closed function. The DG442 has a normally open function. Combining low on-resistance (50 , typ.) with high speed (tON 150 ns, typ.), the DG441/442 are ideally suited for upgrading DG201A/202 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high voltage ratings and superior switching performance, the DG441/442 are built on Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION D1 IN1 IN2 NC D2 Key 3 2 1 20 IN1 1 16 IN2 S1 4 D1 15 D2 V- 5 2 NC 6 DG441 S1 3 14 S2 GND 7 Top View S4 8 V- 4 Dual-In-Line and SOIC 13 V+ 12 NC 19 18 S2 17 V+ 16 NC 15 NC 14 S3 LCC DG441 GND 5 9 Top View S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 10 D4 IN4 11 12 NC 13 IN3 D3 TRUTH TABLE Logic DG441 DG442 0 ON OFF OFF ON 1 Logic "0" v 0.8 V Logic "1" w 2.4 V Document Number: 70053 S-20147--Rev. H, 11-Mar-02 www.vishay.com 1 DG441/442 Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG441DJ 16-Pin Plastic DIP DG442DJ -40 to 85_C _ DG441DY 16-Pin Narrow SOIC DG442DY DG441AK DG441AK/883 5962-9204101MEA 16-Pin CerDIP DG442AK -55 to 125_C _ DG442AK/883 5962-9204102MEA 5962-9204101M2A LCC-20 5962-9204102M2A ABSOLUTE MAXIMUM RATINGS V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK Suffix) . . . . . . . . . . . . . . . . . . -65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 12 mW/_C above 25_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ 5 V Reg INX V- Level Shift/ Drive V+ GND V- FIGURE 1. www.vishay.com 2 Document Number: 70053 S-20147--Rev. H, 11-Mar-02 DG441/442 Vishay Siliconix SPECIFICATIONSa FOR DUAL SUPPLIES Test Conditions Unless Otherwise Specified Parameter V+ = 15 V, V- = -15 V, VIN = 2.4 V, 0.8 Vf Tempb rDS(on) IS = -10 mA, VD = "8.5 V V+ = 13.5 V, V- = -13.5 V Room Full rDS(on) IS = -10 mA, VD = "10 V V+ = 15 V, V- = -15 V Room Full Symbol Typc A Suffix D Suffix -55 to 125_C -40 to 85_C Mind Maxd Mind Maxd Unit -15 15 -15 15 V Analog Switch Analog Signal Rangee Drain-Source On-Resistance On-Resistance Match Between Channelse VANALOG Full IS(off) Switch Off Leakage Current ID(off) V+ = 16.5, V- = -16.5 V VD = "15.5 V, VS = #15.5 V 50 85 100 85 100 4 5 4 5 Room Full "0.01 -0.5 -20 0.5 20 -0.5 -5 0.5 5 Room Full "0.01 -0.5 -20 0.5 20 -0.5 -5 0.5 5 ID(on) V+ = 16.5 V, V- = -16.5 V VS = VD = "15.5 V Room Full "0.08 -0.5 -40 0.5 40 -0.5 -10 0.5 10 Input Current VIN Low IIL VIN under test = 0.8 V, All Other = 2.4 V Full -0.01 -500 500 -500 500 Input Current VIN High IIH VIN under test = 2.4 V, All Other = 0.8 V Full 0.01 -500 500 -500 500 Room 150 250 250 Room 90 120 120 Room 110 210 210 Room -1 Room 60 Room 100 Room 4 Room 4 Room 16 Full 15 Channel On Leakage Current nA Digital Control nA Dynamic Characteristics Turn-On Time tON DG441 Turn-Off Time Charge DG442 Injectione tOFF Q Off Isolatione OIRR Crosstalke (Channel-to-Channel) XTALK Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) RL = 1 k , CL = 35 pF VS = "10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 RL = 50 , CL = 5 pF f = 1 MHz f = 1 MHz VANALOG = 0 V ns pC dB pF Power Supplies Positive Supply Current I+ Negative Supply Current I- Ground Current Document Number: 70053 S-20147--Rev. H, 11-Mar-02 IGND V+ = 16.5 V, V- = -16.5 V VIN = 0 or 5 V Room Full Full -0.000 1 -15 100 100 -1 -5 -1 -5 -100 -100 A www.vishay.com 3 DG441/442 Vishay Siliconix SPECIFICATIONSa FOR SINGLE SUPPLY Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 12 V, V- = 0 V, VIN = 2.4 V, 0.8 Vf Tempb Typc A Suffix D Suffix -55 to 125_C -40 to 85_C Mind Maxd Mind Maxd Unit 0 12 0 12 V Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Full IS = -10 mA, VD = 3 V, 8 V V+ = 10.8 V Room Full 100 160 200 160 200 Room 300 450 450 Room 60 200 200 2 Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF RL = 1 k , CL = 35 pF VS = 8 V, See Figure 2 Q CL = 1 nF Vgen = 6 V, Rgen = 0 Room Full 15 V+ = 13.2 V, V- = 0 V VIN = 0 or 5 V Room Full -0.0001 -1 -100 -1 -100 Full -15 -100 -100 Charge Injection ns pC Power Supplies Positive Supply Current Negative Supply Current Ground Current I+ I- IGND 100 100 A Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com 4 Document Number: 70053 S-20147--Rev. H, 11-Mar-02 DG441/442 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Power Supply Voltage rDS(on) vs. VD and Temperature 80 "5 V 80 "8 V 60 "10 V "12 V "15 V 40 "20 V 20 r DS(on)- Drain-Source On-Resistance ( ) r DS(on)- Drain-Source On-Resistance ( ) 100 0 V+ = 15 V V- = -15 V 70 60 125_C 50 85_C 40 25_C 30 20 -55_C 0_C -40_C 10 0 -20 -15 -10 -5 0 5 10 15 20 -15 -10 -5 VD - Drain Voltage (V) 0 5 10 15 VD - Drain Voltage (V) rDS(on) vs. VD and Unipolar Power Supply Voltage rDS(on) vs. VD and Temperature (Single 12-V Supply) 140 300 r DS(on)- Drain-Source On-Resistance ( ) r DS(on)- Drain-Source On-Resistance ( ) V- = 0 V 250 V+ = 5 V 200 150 8V 100 10 V 12 V 15 V 50 20 V 0 120 125_C 85_C 100 80 25_C 60 -55_C 40 0_C -40_C 20 V+ = 12 V V- = 0 V 0 0 4 8 12 16 20 0 2 4 VD - Drain Voltage (V) 6 8 10 12 VD - Drain Voltage (V) Crosstalk and Off Isolation vs. Frequency Charge Injection vs. Source Voltage 50 140 CL = 1 nF 40 120 Crosstalk 30 100 V+ = 15 V V- = -15 V Q (pC) (-dB) 20 80 60 10 0 Off Isolation 40 V+ = 12 V V- = 0 V -10 V+ = 15 V V- = -15 V Ref. 10 dBm 20 -20 0 -30 100 1k 10 k 100 k f - Frequency (Hz) Document Number: 70053 S-20147--Rev. H, 11-Mar-02 1M 10 M -10 -5 0 5 10 VS - Source Voltage (V) www.vishay.com 5 DG441/442 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Threshold vs. Supply Voltage Source/Drain Leakage Currents 2.4 20 IS(off) , ID(off) 0 1.6 V IN (V) I S, I D (pA) -20 0.8 -40 ID(on) -60 V+ = 15 V V- = -15 V For I(off), VD = -VS -80 0 0 "5 "10 "15 -100 -15 "20 -10 0 -5 5 15 10 VD or VS - Drain or Source Voltage (V) V+, V- Positive and Negative Supplies (V) Source/Drain Leakage Currents (Single 12-V Supply) Operating Voltage 50 10 V+ 44 40 IS(off) , ID(off) -10 V+ (V) I S, I D (pA) 0 IS(on) + ID(on) -20 30 20 10 3 0 -40 0 2 4 6 8 10 5 V - CMOS Compatible D IN CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC V- TTL Compatible VIN = 0.8 V, 2.4 V V+ = 12 V V- = 0 V For ID, VS = 0 For IS, VD = 0 -30 S 12 -10 0 VD or VS - Drain or Source Voltage (V) CMOS Compatible -30 -20 -40 -50 V- - Negative Supply (V) Switching Time vs. Power Supply Voltage Switching Time vs. Power Supply Voltage 160 500 V- = 0 V 140 tON 400 tON 300 100 t (ns) t (ns) 120 80 200 tOFF 60 100 40 20 "10 tOFF "12 "14 "16 "18 Supply Voltage (V) www.vishay.com 6 "20 "22 0 8 10 12 14 16 18 20 22 VS - Source Voltage (V) Document Number: 70053 S-20147--Rev. H, 11-Mar-02 DG441/442 Vishay Siliconix TEST CIRCUITS +15 V 3V Logic Input 50% V+ "10 V S 0V D VO IN RL 1 k 3V GND tr <20 ns tf <20 ns 50% V- CL 35 pF -15 V tOFF Switch Input VS Switch Output 0V CL (includes fixture and stray capacitance) VO 80% 80% tON Note: Logic input waveform is inverted for DG442. FIGURE 2. Switching Time +15 V V O VO V+ Rg D S INX VO IN CL 1 nF 3V V- GND OFF ON OFF (DG441) INX OFF ON Q = VO x CL OFF (DG442) -15 V FIGURE 3. Charge Injection C = 1 mF tantalum in parallel with 0.01 mF ceramic +15 V C +15 V C V+ S1 VS D1 V+ Rg = 50 IN1 50 S2 VO D2 GND V- GND C V- C -15 V -15 V XTALK Isolation = 20 log C = RF bypass RL IN 0V, 2.4 V RL IN2 0V, 2.4 V VO D Rg = 50 0V, 2.4 V NC S VS Off Isolation = 20 log VS VS VO VO FIGURE 5. Off Isolation FIGURE 4. Crosstalk +15 V C S V+ Meter 0 V, 2.4 V IN HP4192A Impedance Analyzer or Equivalent D GND V- C -15 V FIGURE 6. Source/Drain Capacitances Document Number: 70053 S-20147--Rev. H, 11-Mar-02 www.vishay.com 7 DG441/442 Vishay Siliconix APPLICATIONS +24 V +15 V RL DG442 V+ I = 3A 150 +15 V VN0300L, M IN +15 V VIN 1/4 DG442 10 k S + +15 V GND D - VOUT CH + - V- IN 0 = Load Off 1 = Load On -15 V FIGURE 7. Power MOSFET Driver VIN H = Sample L = Hold FIGURE 8. Open Loop Sample-and-Hold + - VOUT +15 V Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ GAIN1 AV = 1 R1 90 k GAIN2 AV = 10 R2 5 k With SW4 Closed VOUT = R1 + R2 + R3 + R4 VIN GAIN3 AV = 20 R3 4 k GAIN4 AV = 100 R4 1 k = 100 R4 DG441 or DG442 V- GND -15 V FIGURE 9. Precision-Weighted Resistor Programmable-Gain Amplifier www.vishay.com 8 Document Number: 70053 S-20147--Rev. H, 11-Mar-02 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1