2SA1860 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) VCB=-150V -100max A V IEBO VEB=-5V -100max A IC=-25mA -150min V VCE(sat) W fT 150 C COB -55 to +150 C Tstg IC=-5A, IB=-500mA -2.0max V VCE=-12V, IE=2A 50typ MHz VCB=-10V, f=1MHz 400typ pF 3.0 A 80(Tc=25C) 3.3 -3 PC o3.30.2 a b 1.75 hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 5.450.1 Typical Switching Characteristics (Common Emitter) VCC (V) RL () IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) -60 12 -5 -10 5 -500 500 0.25typ 0.85typ 0.2typ I B =-20mA 0 -1 -2 -3 -4 0 0 -0.2 -0.4 -0.6 -0.8 (V C E =-4V) 200 200 -1 -5 Transient Thermal Resistance DC Cur rent Gain h FE Typ 50 25C 100 -30C 50 30 -0.02 -10 -14 -0.1 p) Tem -1 -0.5 f T - I E Characteristics (Typical) -2 -1 -5 j-a - t Characteristics -10 -14 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c - T a Derating (V C E =-12V) 80 -40 10 -10 si nk Collect or Cur ren t I C (A) 40 at Without Heatsink Natural Cooling he -0.5 ite -1 60 fin 20 s -5 In 40 C s s ith Typ m W D 60 10 0m 1m M aximum Power Dissipa ti on P C (W) 80 Cu t-off Fre quen cy f T (M H Z ) DC Cur rent Gain h FE 125C -0.5 0 Base-Emittor Voltage V B E (V) h FE - I C Temperature Characteristics (Typical) (V C E =-4V) -0.1 0 -1.0 Base Current I B (A) h FE - I C Characteristics (Typical) 20 -0.02 se -5A Collector-Emitter Voltage V C E (V) 100 -5 I C =-10A j- a ( C/W) 0 -1 (Ca -50mA -5 -10 25 -100 mA -2 C -1 50 m A -10 E (V C E =-4V) 125 mA C 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. -14 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) 00 -7 Collector Current I C (A) -200 1.5 I C - V BE Temperature Characteristics (Typical) -3 A m mA mA mA 00 500 400 00 - -3 -6 - mA -14 4.4 B V CE ( sat ) - I B Characteristics (Typical) 0.65 +0.2 -0.1 5.450.1 1.5 I C - V CE Characteristics (Typical) 0.8 2.15 ) IB Tj 50min VCE=-4V, IC=-5A emp hFE eT V(BR)CEO A Cas V -14 3.45 0.2 C ( -5 IC p) VEBO 5.50.2 -30 -150 Tem VCEO 15.60.2 ase V C (C -150 0.80.2 ICBO VCBO 5.5 Unit Symbol External Dimensions FM100(TO3PF) (Ta=25C) Ratings Unit 1.6 Electrical Characteristics Conditions Ratings 23.00.3 Symbol 9.50.2 Absolute maximum ratings (Ta=25C) Application : Audio and General Purpose 16.2 LAPT 20 -0.1 0 0.02 0.1 1 Emitter Current I E (A) 34 10 -0.05 -2 Without Heatsink -5 -10 -50 -100 Collector-Emitter Voltage V C E (V) -200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(C) 150