Bulletin PD-20786 rev. A 07/04 10BQ100PbF 1 Amp SCHOTTKY RECTIFIER IF(AV) = 1.0Amp VR = 100V Major Ratings and Characteristics Characteristics Description/ Features Value Units IF(AV) Rectangular waveform 1.0 A VRRM 100 V IFSM @ tp = 5 s sine 780 A VF @ 1.0 Apk, TJ=125C 0.62 V TJ range - 55 to 175 C The 10BQ100PbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free ("PbF" suffix) Case Styles 10BQ100PbF SMB www.irf.com 1 10BQ100PbF Bulletin PD-20786 rev. A 07/04 Voltage Ratings Part number VR 10BQ100PbF Max. DC Reverse Voltage (V) 100 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 10BQ Units Conditions IF(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ T L = 152 C, rectangular wave form IFSM 780 A 5s Sine or 3s Rect. pulse Max. Peak One Cycle Non-Repetitive Surge Current 38 EAS Non- Repetitive Avalanche Energy 1.0 mJ 10ms Sine or 6ms Rect. pulse IAR Repetitive Avalanche Current 0.5 A 10BQ Units Following any rated load condition and with rated V RRM applied TJ = 25 C, IAS = 0.5A, L = 8mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. Va = 1.5 x Vr typical Electrical Specifications Parameters VFM Max. Forward Voltage Drop (1) * See Fig. 1 IRM Max. Reverse Leakage Current (1) * See Fig. 2 Conditions 0.78 V @ 1A 0.89 V @ 2A 0.62 V @ 1A 0.72 V @ 2A 0.5 mA TJ = 25 C 1 mA TJ = 125 C TJ = 25 C TJ = 125 C VR = rated VR CT Typical Junction Capacitance 42 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25C LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body 10000 V/ s dv/dt Max. Volatge Rate of Charge (Rated VR) (1) Pulse Width < 300s, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters 10BQ TJ Max. Junction Temperature Range (*) - 55 to 175 Tstg Max. Storage Temperature Range - 55 to 175 Units Conditions C C RthJL Max. Thermal Resistance Junction to Lead (**) 36 C/W DC operation RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight 80 C/W 0.10 (0.003) g (oz.) Case Style SMB Device Marking IR1J (*) dPtot dTj < 1 Rth( j-a) Similar DO-214AA thermal runaway condition for a diode on its own heatsink (**) Mounted 1 inch square PCB 2 www.irf.com 10BQ100PbF Bulletin PD-20786 rev. A 07/04 10 10 Tj = 175C Reverse Current - I R (mA) Tj = 175C (A) Tj = 125C Tj = 25C F 150C 125C 0.1 100C 75C 0.01 50C 0.001 25C 0.0001 0.00001 0 20 40 60 80 100 Reverse Voltage - VR (V) 1 Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 100 T = 25C Junction Capacitance - C T (p F) Instantaneous Forward Current - I 1 0.1 0.2 J 10 0.4 0.6 0.8 1 0 20 Forward Voltage Drop - VFM (V) 40 60 80 100 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance Z thJC (C/W) 100 10 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 1 Notes: Single Pulse (Thermal Resistance) 1. Duty factor D = t1/ t2 . 2. Peak Tj = Pdm x ZthJC + Tc 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 . 100 t1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg) www.irf.com 3 10BQ100PbF Bulletin PD-20786 rev. A 07/04 1 170 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 160 Average Power Loss (Watts) Allowable Lead Temperature (C) 180 150 140 130 Square wave (D = 0.50) Rated Vr applied 120 see note (2) 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.8 0.6 DC RMS Limit 0.4 0.2 0 0 0.4 0.8 1.2 1.6 0 Average Forward Current - I F(AV) (A) 0.3 0.6 0.9 1.2 1.5 Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Non-Repetitive Surge Current - I (A) FSM 1000 100 At Any Rated Load Condition And With rated Vrrm Applied Following Surge 10 10 100 1000 10000 Square Wave Pulse Duration - Tp (Microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = VR1 x I R (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 10BQ100PbF Bulletin PD-20786 rev. A 07/04 Outline Table CATHODE Device Marking: IR1J 2.15 (.085) 1.80 (.071) 1 3.80 (.150) 3.30 (.130) 1 4.70 (.185) POLARITY ANODE 2 2 PART NUMBER 4.10 (.161) 2.5 TYP. (.098 TYP.) 2.40 (.094) 1.90 (.075) 0.30 (.012) 0.15 (.006) 1.30 (.051) 0.76 (.030) 5.60 (.220) 5.00 (.197) 2.0 TYP. (.079 TYP.) SOLDERING PAD 4.2 (.165) 4.0 (.157) Outline SMB Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR1J VOLTAGE CURRENT IR LOGO PYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" www.irf.com 5 10BQ100PbF Bulletin PD-20786 rev. A 07/04 Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 10 B Q 100 1 2 3 4 TR PbF 5 6 1 - Current Rating 2 - B = Single Lead Diode 3 - Q = Schottky Q Series 4 - Voltage Rating (100 = 100V) 5 - y none = Box (1000 pieces) y TR = Tape & Reel 6 - (3000 pieces) y none = Standard Production y PbF = Lead-Free 10BQ100 ******************************************************************************** * SPICE Model Diode * ******************************************************************************** .SUBCKT 10BQ100 ANO CAT D1 ANO 1 CAT *Define diode model .model D10BQ100 D(Is=341.4E-06 N=2.664 Rs=3.65E-03 Ikf=37.08E-03 Xti=2 Eg=1.11 + Cjo=65.57E-12 M=.5751 Vj=4.282 Fc=0.5 Isr=17.26E-27 Nr=5.662 + Bv=119.9 Ibv=215.5E-06 Tt=43.28E-09) ******************************************************************************** .ENDS 10BQ100 6 www.irf.com 10BQ100PbF Bulletin PD-20786 rev. A 07/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/04 www.irf.com 7