JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP41A/41B/41C = Transistor | NPN | FEATURES Power dissipation Pom. = z W i Tamb=25 0 } Collector current ew: 6 A Collactor-base voltage Viericeo > TIP41A: & vs TIPS1B: 86 TIPF1C : 100 Operating and storage junction tamperatura range Ty, Tayi BSC to +150C ELECTRICAL CHARACTERISTICS (Tamb=25 0 TO220 1.BASE J.EMITTER 2.COLLECTOR mal wy oT | 123 unless otherwise specified) Parameter Symbal Teast conditions MIM ae UNIT 417A ao Collector-base breakdown voltage 416 VibPiceo | lc imA, le=0 ao i" 41c 100 a4 ao Collector-emitter breakdown voltage 4168 VibRiceo | le=20mA. n=O a0 Vi anc 100 Emitter-base breakdown voltage WBRigeo le= imA, I-20 6 Ww 41A Vor=60 Vo oip=O Collector cut-off current 4iB leno Vor=60 VO iO o4 mA 4ic Vor=190 V. k=O aia Woes Soy , bed Collector cut-off current 4iB keen Vee= 30V , bed o7 may aic Ver=B0V , b= 0 Emitier cut-off current loon Veh V. Ic=0 1 mA Frni Vore4 b= 0.34 a0 DC current gain Reem Voema Vo b= 3A 15 rs Cellector-emitter saturation vallage Mezian ky =6m.4, lp=06m4, 445 vy Base-emitter voltage Vocion Vor= 4, lo=GmA 2 V cys Voentov . lee 0.5m Ti ition fre fr a MH ransition fraquency tari Gilt iz