IXBOD1 Breakover Diode Gen1 (BOD1) VBO [V] VBO = 600-1000 V IAVM = 0.9 A Standard Types 600 50 IXBOD1-06 700 50 IXBOD1-07 800 50 IXBOD1-08 900 50 IXBOD1-09 1000 50 IXBOD1-10 Backside: isolated A K Features / Advantages: Applications: Package: FP-Case * Very low forward voltage drop * Low leakage current * High voltage circuit protection * Transient voltage protection * Trigger device * Power pulse generators * Lightning and arcing protection * Energy discharge circuits * Battery overvoltage protection * Solar array protection * Industry standard outline * RoHS compliant * Epoxy meets UL 94V-0 * Soldering pins for PCB mounting * Base plate: Plastic overmolded tab * Reduced weight IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20130822a 1-5 IXBOD1 BOD1 Ratings Symbol Definitions Conditions min. ID drain current VD = 0.8*VBO VBO breakover voltage VBO (TVJ) = VBO, 25C [1 + KT (TVJ - 25C)] IRMS RMS current f = 50 Hz typ. TVJ = 125C max. 20 A V Tamb = 50C 1.4 A pins soldered to printed circuit (conductor 0.035x2mm) IFAVM maximum average forward current ISM maximum pulsed source current I2t 2 I t value for fusing tp = 0.1 ms; non repetitive Tamb = 50C tp = 0.1 ms Tamb = 50C 0.9 A 200 A 2 A2s -3 2*10 700 K-1 K/Ws 60 45 K/W K/W KT KP temperature coefficient of VBO coefficient for energy per pulse EP (material constant) RthJA thermal resistance junction to ambient IBO breakover current TVJ = 25C 15 mA IH holding current TVJ = 25C 30 mA VH holding voltage TVJ = 25C 8 V (dv/dt)cr critical rate of rise of voltage VD = 0.67*(VBO +100 V) TVJ = 50C 1000 V/s (di/dt)cr critical rate of rise of curent VD = VBO; IT = 80 A; f = 50 Hz TVJ = 125C 200 A/s tq turn-off time VD = 0.67*VBO; VR = 0 V; IT = 80 A TVJ = 125C dv/dt(lin.) = 200 V/s; di/dt = -10 A/s VT forward voltage drop IT = 5 A TVJ = 125C 1.7 V VT0 rT threshold voltage slope resistance for power-loss calculation only TVJ = 125C 1.1 0.12 V IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved natural convection with air speed 2 m/s 4 Data according ot IEC 60747 and per semiconductor unless otherwise specified 150 s 20130822a 2-5 IXBOD1 Package FP-Case Ratings Symbol Definitions Conditions Tamb Tstg TVJM ambient temperature (cooling medium) storage temperature maximum virtual junction temperature min. typ. -40 -40 -40 Weight max. 125 125 125 0.9 C C C g Product Marking Logo Part No. yywwA Date Code Assembly line K A Ordering Part Name Marking on Product Standard IXBOD1-06 IXBOD1-06 Box 100 467936 Standard IXBOD1-07 IXBOD1-07 Box 100 478873 Standard IXBOD1-08 IXBOD1-08 Box 100 467928 Standard IXBOD1-09 IXBOD1-09 Box 100 474940 Standard IXBOD1-10 IXBOD1-10 Box 100 467839 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Data according ot IEC 60747 and per semiconductor unless otherwise specified 20130822a 3-5 IXBOD1 Outlines FP-case Dimensions in mm (1 mm = 0.0394") 1.2 1.5 7.5 4 1 11.5 9 1.5 10 0.8 A IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 0.5 K Data according ot IEC 60747 and per semiconductor unless otherwise specified 20130822a 4-5 IXBOD1 Diode ITM = 200 A 160 120 10-1 80 60 40 10-2 20 Ep 10 [Ws] 5 Fig. 1 Energy per pulse for trapezoidal current waveforms (see waveform definition) 10-3 2 1 10-4 10-1 100 101 102 tp [s] ITM = 200 A 10-1 160 120 80 60 40 10-2 Fig. 2 Energy per pulse for exponentially decaying current pulse (see waveform definition) 20 Ep 10 [Ws] 5 10-3 2 1 10-4 -1 10 100 101 102 tp [s] 20 100 Va = 0 m/s 10 8 Va = 2 m/s 6 VT ZthJA 4 10 TVJ = 125C [V] [K/W] 1 TVJ = 25C 2 1 1 10 IT [A] Fig. 3 On-state voltage IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 100 0.1 0.01 0.1 1 10 100 1000 t [s] Fig. 4 Transient thermal resistance Data according ot IEC 60747 and per semiconductor unless otherwise specified 20130822a 5-5