© 2013 IXYS All rights reserved 1 - 5
20130822a
IXBOD1
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed
VBO = 600-1000 V
IAVM = 0.9 A
Breakover Diode Gen1
(BOD1)
VBO Standard Types
[V]
600 ±50 IXBOD1-06
700 ±50 IXBOD1-07
800 ±50 IXBOD1-08
900 ±50 IXBOD1-09
1000 ±50 IXBOD1-10
Features / Advantages:
• Very low forward voltage drop
• Low leakage current
Package: FP-Case
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
• Soldering pins for PCB mounting
• Base plate: Plastic overmolded tab
• Reduced weight
Backside: isolated
AK
Applications:
• High voltage circuit protection
• Transient voltage protection
• Trigger device
• Power pulse generators
• Lightning and arcing protection
• Energy discharge circuits
• Battery overvoltage protection
• Solar array protection
© 2013 IXYS All rights reserved 2 - 5
20130822a
IXBOD1
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed
BOD1 Ratings
Symbol Defi nitions Conditions min. typ. max.
IDdrain current VD = 0.8·VBO TVJ = 125°C 20 µA
VBO breakover voltage VBO (TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)] V
IRMS RMS current f = 50 Hz T
amb = 50°C
pins soldered to printed circuit (conductor 0.035x2mm)
1.4 A
IFAVM maximum average forward current 0.9 A
ISM maximum pulsed source current tp = 0.1 ms; non repetitive T
amb = 50°C 200 A
I2tI2t value for fusing tp = 0.1 ms T
amb = 50°C 2 A2s
KT
KP
temperature coeffi cient of VBO
coeffi cient for energy per pulse EP (material constant)
2·10-3
700
K-1
K/Ws
RthJA thermal resistance junction to ambient natural convection
with air speed 2 m/s
60
45
K/W
K/W
IBO breakover current TVJ = 25°C 15 mA
IHholding current TVJ = 25°C 30 mA
VHholding voltage TVJ = 25°C 4 8 V
(dv/dt)cr critical rate of rise of voltage VD = 0.67·(VBO +100 V) TVJ = 50°C 1000 V/µs
(di/dt)cr critical rate of rise of curent VD = VBO; IT = 80 A; f = 50 Hz TVJ = 125°C 200 A/µs
tqturn-off time VD = 0.67·VBO; VR = 0 V; IT = 80 A TVJ = 125°C
dv/dt(lin.) = 200 V/µs; di/dt = -10 A/µs
150 µs
VTforward voltage drop IT = 5 A TVJ = 125°C 1.7 V
VT0
rT
threshold voltage
slope resistance for power-loss calculation only TVJ = 125°C 1.1
0.12
V
Ω
© 2013 IXYS All rights reserved 3 - 5
20130822a
IXBOD1
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed
Package FP-Case Ratings
Symbol Defi nitions Conditions min. typ. max.
Tamb
Tstg
TVJM
ambient temperature (cooling medium)
storage temperature
maximum virtual junction temperature
-40
-40
-40
125
125
125
°C
°C
°C
Weight 0.9 g
Date Code
Part No.
Logo
Product Marking
yywwA
Assembly
line
K A
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard IXBOD1-06 IXBOD1-06 Box 100 467936
Standard IXBOD1-07 IXBOD1-07 Box 100 478873
Standard IXBOD1-08 IXBOD1-08 Box 100 467928
Standard IXBOD1-09 IXBOD1-09 Box 100 474940
Standard IXBOD1-10 IXBOD1-10 Box 100 467839
© 2013 IXYS All rights reserved 4 - 5
20130822a
IXBOD1
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed
Outlines FP-case
10
9
11.5
0.8 0.5
4
1
1.5
1.5
7.5
1.2
Dimensions in mm
(1 mm = 0.0394“)
A K
© 2013 IXYS All rights reserved 5 - 5
20130822a
IXBOD1
IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed
tp [µs]
Ep
[Ws]
10-1
10-2
10-3
10-4
10-1 100101102
160
120
80
60
40
20
10
5
2
1
ITM = 200 A
Ep
[Ws]
tp [µs]
ITM = 200 A
160
120
80
60
40
20
10
5
2
1
10-1
10-2
10-3
10-4
10-1 100101102
Fig. 1 Energy per pulse for trapezoidal current
waveforms (see waveform definition)
Fig. 2 Energy per pulse for exponentially decaying
current pulse (see waveform definition)
VT
[V]
20
10
8
6
4
2
11 10 100
IT [A]
Fig. 3 On-state voltage
TVJ = 125°C
TVJ = 25°C
0.01 0.1 1 10 100 1000
t [s]
100
10
1
0.1
ZthJA
[K/W]
Fig. 4 Transient thermal resistance
Va = 0 m/s
Va = 2 m/s
Diode
