2SC535B - Hitachi Semiconductor

2SC535

Silicon NPN Epitaxial Planar

ADE-208-1047 (Z)

1st. Edition

Mar. 2001

Application

VHF amplifier, mixer, local oscillator

Outline

1. Emitter

2. Collector

3. Base

TO-92 (2)

321

2SC535

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage VCBO 30 V

Collector to emitter voltage VCEO 20 V

Emitter to base voltage VEBO 4V

Collector current IC20 mA

Collector power dissipation PC100 mW

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

2SC535

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

voltage V(BR)CBO 30 — — V IC = 10 µA, IE = 0

Collector to emitter breakdown

voltage V(BR)CEO 20 — — V IC = 1 mA, RBE = ∞

Emitter to base breakdown

voltage V(BR)EBO 4——VI

= 10 µA, IC = 0

Collector cutoff current ICBO — — 0.5 µAV

CB = 10 V, IE = 0

DC current transfer ratio hFE*160 — 200 VCE = 6 V, IC = 1 mA

Base to emitter voltage VBE — 0.72 — V VCE = 6 V, IC = 1 mA

Collector to emitter saturation

voltage VCE(sat) — 0.17 — V IC = 20 mA, IB =4 mA

Gain bandwidth product fT450 940 — MHz VCE = 6 V, IC = 5 mA

Collector output capacitance Cob — 0.9 1.2 pF VCB = 10 V, IE = 0, f = 1 MHz

Power gain PG 17 20 — dB VCE = 6 V, IC = 1 mA,

f = 100 MHz

Noise figure NF — 3.5 5.5 dB VCE = 6 V, IC = 1 mA,

f = 100 MHz, Rg = 50 Ω

Input admittance (typ) yie 1.3 + j5.3 mS VCE = 6 V, IC = 1 mA,

f = 100 MHz

Reverse transfer admittance

(typ) yre –0.078 – j0.41 mS

Foward transfer admittance

(typ) yfe 32 – j10 mS

Output admittance (typ) yoe 0.08 + j0.82 mS

Note: 1. The 2SC535 is grouped by hFE as follows.

60 to 120 100 to 200

2SC535

Maximum Collector Dissipation Curve

150

100

0 50 150100

Ambient Tmperature Ta (°C)

Collector power dissipation PC (mW)

Typical Output Characteristics

04 1612

IB = 0

= 100 mW

25 µA

100

125

Collector to Emitter Voltage VCE (V)

Collector Current IC (mA)

208

150

300

175

200

225

250

275

Typical Output Characteristics

10µA

IB = 0

0 4 12 208

Collector to Emitter Voltage VCE (V)

Collector Current IC (mA)

DC Current Transfer Ratio vs.

Collector Current

Collector Current IC (mA)

DC Current Transfer ratio hFE

VCE = 6 V

120

100

0.1 0.5 1050.2 2 201.0

2SC535

Typical Transfer Cahracteristics (1)

Collector Current IC (mA)

VCE = 6 V

0.6 0.7

Base to Emitter Voltage VBE (V) 0.8

Typical Transfer Cahracteristics (2)

Collector Current IC (mA)

VCE = 6 V

0.6 0.7

Base to Emitter Voltage VBE (V) 0.8

Collector Output Capacitance vs.

Collector to Base Voltage

Collector to Base Voltage VCB (V)

Collector Output Capacitance Cob (pF)

f = 1 MHz

IE = 0

1.5

1.3

1.1

0.9

0.7

0.5

0.3 101.0 303

2SC535

Gain Bandwidth Product vs.

Collector Current

Collector Current IC (mA)

VCE = 6 V

1,000

800

600

400

200

0.1 0.5 2 100.2 1.0 5 20

Gain Bandwidth Product fT (MHz)

Noise Figure vs. Collector Current

Collector Current IC (mA)

Noise figure NF (dB)

IC = 1 mA

f = 100 MHz

Rg = 50 Ω

0.2 1.0 50.5 2 10

2SC535

Noise Figure vs. Signal Source Resistance

Signal Source Resistance Rg (Ω)

Noise figure NF (dB)

VCE = 6 V

IC = 1 mA

f = 100 MHz

020 100 50050 200 1,000

Noise figure NF (dB)

01521020

Noise Figure vs. Collector to

Emitter Voltage

Collecter to Emitter Voltage VCE (V)

VCE = 6 V

f = 100 MHz

Rg = 50 Ω

100 MHz Power Gain Test Circuit

300 p

3 k 500

0.01 µ

0.1 µ

0.01 µ

10 p

max

VEE VCC

0.01 µ

D.U.T.

f = 100 MHz

Rg = 100 ΩOUT

Rl = 550 Ω

Unit R : Ω

C : F

Input Admittance Characteristics

Input Conductance gie (mS)

Input Suceptance bie (mS)

yie = gie + jbie

VCE = 6 V

f = 200 MHz

IC = 1 mA

150

100

100 200

2 mA

3 mA

5 mA

50 MHz

02 8 146121841016

2SC535

Reverse Transfer Admittance

Characteristics

f = 50 MHz

100

150

200

IC = 5 mA 3 21

–1.0

–0.8

–0.6

–0.4

–0.2

0–0.04–0.16 –0.12 –0.08

Reverse Transfer Conductance gre (mS)

yre = gre + jbre

VCE = 6 V

Reverse Transfer Suceptance bre (mS)

–0.20

Forward Transfer Admittance

Characteristics

–120

–100

–80

–60

–40

–20 IC = 1 mA

2 mA

3 mA

5 mA

200 150 100

020 6040 80 120100

Forward Transfer Conductance gfe (mS)

Forward Transfer Suceptance bfe (mS)

f = 50 MHz

yfe = gfe + jbfe

VCE = 6 V

Output Admittance Characteristics

Output Conductance goe (mS)

yoe = goe + jboe

VCE = 6 V

IC = 1 mA 23 5

2.4

2.0

1.6

1.2

0.8

0.4

0 0.1 0.60.40.30.2 0.5

Output Suceptance boe (mS)

150

100

f = 200 MHz

Input Admittance vs. Collector

to Emitter Voltage

Collector to Emitter Voltage VCE (V)

Input Admittance yie (mS)

1.0

0.51520210

ie = gie + jbie

IC = 1 mA

f = 100 MHz

bie

gie

2SC535

Input Admittance vs. Collector Current

Collector Current IC (mA)

Input Admittance yie (mS)

yie = gie + jbie

VCE = 6 V

f = 100 MHz

1.0

0.5

0.2

0.1 0.5 2 100.2 1.0 5

bie

gie

Reverse Transfer Admittance vs.

Collector to Emitter Voltage

Collector to Emitter Voltage VCE (V)

Reverse Transfer Suceptance bre (mS)

Reverse Transfer Conductance gre (mS)

–1.0 –0.1

–0.05

–0.02

–0.01

–0.005

–5

–0.2

–0.1

–0.051520210

re = gre + jbre

IC = 1 mA

f = 100 MHz

bre

gre

yre = gre + jbre

VCE = 6 V

f = 100 MHz

Reverse Transrer Admittance vs.

Collector Current

Collector Current IC (mA)

Reverse Transfer Conductance gre (mS)

Reverse Transfer Suceptance bre (mS)

bre

gre

–1.0

–0.5

–0.2

–0.1

–0.05

–0.02

–0.01

–0.1

–0.05

–0.02

–0.01

–0.005

–0.002

–0.001

0.1 0.5 2 100.2 1.0 5

Forward Transfer Admittance vs.

Collector to Emitter Voltage

Collector to Emitter Voltage VCE (V)

Forward Transfer Admittance yie (mS)

100

51520210

fe = gfe + jbfe

IC = 1 mA

f = 100 MHz

–bfe

gfe

2SC535

yfe = gfe + jbfe

VCE = 6 V

f = 100 MHz

Forward Transrer Admittance vs.

Collector Current

Collector Current IC (mA)

Forward Transrer Admittance yie (mS)

–bfe

gfe

100

0.1 0.5 2 100.2 1.0 5

Output Admittance vs. Collector

to Emitter Voltage

Collector to Emitter Voltage VCE (V)

Output Suceptance boe (mS)

Output Conductance goe (mS)

2.0

1.0

0.5

0.2

0.11520

0.01

0.02

0.05

0.1

0.2

210

eo = goe + jboe

IC = 1 mA

f = 100 MHz

boe

goe

Output Admittance vs. Collector Current

Collector Current IC (mA)

Output Admittance yoe (mS)

0.1 0.5 2 100.2 1.0 5

2.0

1.0

0.5

0.2

0.1

0.05

0.02

yoe = goe + jboe

VCE = 6 V

f = 100 MHz

boe

goe

2SC535

Package Dimensions

0.60 Max

0.5Max

4.8 ± 0.4 3.8 ± 0.4

5.0 ± 0.2

0.7 2.3 Max

12.7 Min

0.5Max

1.27

2.54

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

TO-92 (2)

Conforms

0.25 g

As of January, 2001

Unit: mm

2SC535

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

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