SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
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Revision: 16-Jan-18 1Document Number: 87606
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount TRANSZORB®
Transient Voltage Suppressors
DEVICES FOR BI-DIRECTIONAL APPLICATIONS
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• ± 3.5 %: very tight VBR tolerance
• Low leakage current
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFETs, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
industrial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: for uni-directional types the band denotes cathode
end, no cathode band on bi-directional types
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Power dissipation mounted on infinite heatsink
(3) Power dissipation mounted on minimum recommended pad layout
PRIMARY CHARACTERISTICS
VBR (uni-directional) 6.5 V to 228 V
VBR (bi-directional) 6.5 V to 145 V
VWM (uni-directional) 5.0 V to 188 V
VWM (bi-directional) 5.0 V to 120 V
PPPM 600 W
PD at TM = 50 °C 5.0 W
PD at TA = 25 °C 1.0 W
TJ max. 150 °C
Polarity Uni-directional, bi-directional
Package SMB (DO-214AA)
SMB (DO-214AA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform PPPM (1) 600 W
Peak pulse current with a 10/1000 μs waveform IPPM (1) See next table A
Power dissipation TM = 50 °C PD (2) 5.0 W
TA = 25 °C PD (3) 1.0
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
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Revision: 16-Jan-18 2Document Number: 87606
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• All terms and symbols are consistent with ANSI/IEEE C62.35
(1) Pulse test: tp 50 ms
(2) For bi-directional types having VWM of 12 V and less, the ID limit is doubled
(3) Surge current waveform per fig. 3 and derate per fig. 2
(+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional device
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (2)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (3)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
UNI BI MIN. MAX.
(+)SMBJ5.0D 6AA 6AA 6.50 6.97 10 5.0 500 65.9 9.1
(+)SMBJ6.0D 6AB 6AB 6.77 7.27 10 6.0 500 58.9 10.2
(+)SMBJ6.5D 6AC 6AC 7.33 7.87 10 6.5 300 54.5 11.0
(+)SMBJ7.0D 6AD 6AD 7.90 8.48 10 7.0 150 50.8 11.8
(+)SMBJ7.5D 6AE 6AE 8.46 9.08 1.0 7.5 75 47.2 12.7
(+)SMBJ8.0D 6AF 6AF 9.03 9.69 1.0 8.0 35 44.8 13.4
(+)SMBJ8.5D 6AG 6AG 9.57 10.3 1.0 8.5 15 42.2 14.3
(+)SMBJ9.0D 6AH 6AH 10.2 10.9 1.0 9.0 5.0 39.7 15.1
(+)SMBJ10D 6AK 6AK 11.3 12.1 1.0 10 2.0 35.9 16.7
(+)SMBJ11D 6AL 6AL 12.4 13.3 1.0 11 2.0 33.5 17.9
(+)SMBJ12D 6AM 6AM 13.5 14.5 1.0 12 2.0 30.6 19.6
(+)SMBJ13D 6AN 6AN 14.6 15.7 1.0 13 0.5 28.3 21.2
(+)SMBJ14D 6AP 6AP 15.8 17.0 1.0 14 0.5 26.2 22.9
(+)SMBJ15D 6AQ 6AQ 17.0 18.2 1.0 15 0.5 25.0 24.0
(+)SMBJ16D 6AR 6AR 18.1 19.4 1.0 16 0.5 23.4 25.6
(+)SMBJ17D 6AS 6AS 19.2 20.6 1.0 17 0.5 22.1 27.2
(+)SMBJ18D 6AT 6AT 20.3 21.8 1.0 18 0.5 20.8 28.8
(+)SMBJ20D 6AU 6AU 22.5 24.2 1.0 20 0.5 18.8 32.0
(+)SMBJ22D 6AV 6AV 24.8 26.6 1.0 22 0.5 17.1 35.1
(+)SMBJ24D 6AW 6AW 27.1 29.1 1.0 24 0.5 15.6 38.4
(+)SMBJ26D 6AX 6AX 29.3 31.5 1.0 26 0.5 14.5 41.6
(+)SMBJ28D 6AY 6AY 31.6 33.9 1.0 28 0.5 13.4 44.7
(+)SMBJ30D 6AZ 6AZ 33.8 36.3 1.0 30 0.5 12.6 47.7
(+)SMBJ33D 6BA 6BA 37.3 40.0 1.0 33 0.5 11.5 52.5
(+)SMBJ36D 6BB 6BB 40.6 43.6 1.0 36 0.5 10.5 57.3
(+)SMBJ40D 6BC 6BC 45.1 48.4 1.0 40 0.5 9.43 63.6
(+)SMBJ43D 6BD 6BD 48.5 52.1 1.0 43 0.5 8.76 68.5
(+)SMBJ45D 6BE 6BE 50.8 54.5 1.0 45 0.5 8.40 71.6
(+)SMBJ48D 6BF 6BF 54.1 58.1 1.0 48 0.5 7.90 76.3
(+)SMBJ51D 6BG 6BG 57.6 61.8 1.0 51 0.5 7.40 81.2
(+)SMBJ54D 6BH 6BH 60.9 65.4 1.0 54 0.5 7.00 85.9
(+)SMBJ58D 6BK 6BK 65.4 70.2 1.0 58 0.5 6.50 92.3
(+)SMBJ60D 6BL 6BL 67.7 72.7 1.0 60 0.5 6.28 95.5
(+)SMBJ64D 6BM 6BM 72.2 77.5 1.0 64 0.5 5.88 102
(+)SMBJ70D 6BN 6BN 79.0 84.8 1.0 70 0.5 5.40 111
(+)SMBJ75D 6BP 6BP 84.6 90.8 1.0 75 0.5 5.06 119
(+)SMBJ78D 6BQ 6BQ 88.1 94.4 1.0 78 0.5 4.86 124
(+)SMBJ85D 6BR 6BR 95.7 103 1.0 85 0.5 4.46 135
(+)SMBJ90D 6BS 6BS 102 109 1.0 90 0.5 4.17 144
(+)SMBJ100D 6BT 6BT 113 121 1.0 100 0.5 3.77 159
(+)SMBJ110D 6BU 6BU 124 133 1.0 110 0.5 3.45 174
(+)SMBJ120D 6BV 6BV 135 145 1.0 120 0.5 3.15 190
(+)SMBJ130D 6BW - 146 157 1.0 130 0.5 2.94 206
(+)SMBJ150D 6BX - 170 182 1.0 150 0.5 2.53 239
(+)SMBJ160D 6BY - 181 194 1.0 160 0.5 2.34 256
(+)SMBJ170D 6BZ - 192 206 1.0 170 0.5 2.23 270
SMBJ188D 6CA - 212 228 1.0 188 0.5 2.03 301
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com Vishay General Semiconductor
Revision: 16-Jan-18 3Document Number: 87606
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Mounted on minimum recommended pad layout
(2) Mounted on 5.0 mm x 5.0 mm copper pad area
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient RJA (1) 125
°C/WRJA (2) 100
Typical thermal resistance, junction to mount RJM 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SMBJ5.0D-M3/H 0.096 H 750 7" diameter plastic tape and reel
SMBJ5.0D-M3/I 0.096 I 3200 13" diameter plastic tape and reel
0.1
1
10
10 100 1000 10 000
PPPM - Peak Pulse Power (kW)
td-Pulse Width (μs)
0.2" x 0.2"(5.0 mm x 5.0 mm)
copper pad areas
0
25
50
75
100
0255075100125150
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
TJ- Initial Temperature (°C)
0
50
100
150
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IPPM - Peak Pulse Current, % IRSM
tp-Time (ms)
TJ= 25 °C
pulse width (td) is de ned
as the point where the peak
current decays to 50 % of IPPM
td
tr= 10 μs
Peak value IPPM
Half value - IPP/2
10/1000 μs waveform
as de ned by R.E.A.
1
10
100
1000
10000
110100
CJ- Junction Capacitance (pF)
VWM - Reverse Stand-Off Voltage (V)
Measured at stand-off
voltage, VWM
Measured at zero bias
TJ= 25 °C
f = 1.0 MHz
Uni-Directional
Bi-Directional
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com Vishay General Semiconductor
Revision: 16-Jan-18 4Document Number: 87606
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Power Dissipation Derating Curve Fig. 6 - Typical Transient Thermal Impedance
Note
• Fig.1, 10 000 μs Pppm is actual test for VWM 60 V types, over 60 V types 10 000 μs Pppm is curve extensional value
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0
1
2
3
4
5
6
0 255075100125150
PM(av) -Steady State Power Dissipation (W)
TA- Ambient Temperature (°C)
T
A
=T
M
mounted on ininite heatsink
Mounted on minimum
recommend pad layout
0.1
1
10
100
1000
0.001 0.1 10 1000
Transient Thermal Impedance (°C/W)
tp-Pulse Duration (s)
Junction to Ambient
Mounted on minimum
recommend pad area
Mounted on 5.0 x 5.0 mm
copper pad area
SMB (DO-214AA)
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.205 (5.21)
0.220 (5.59)
0 (0)
0.008 (0.2)
0.130 (3.30)
0.155 (3.94)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.220 REF.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
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Revision: 08-Feb-17 1Document Number: 91000
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