TL/H/7148
LM3080 Operational Transconductance Amplifier
February 1995
LM3080
Operational Transconductance Amplifier
General Description
The LM3080 is a programmable transconductance block in-
tended to fulfill a wide variety of variable gain applications.
The LM3080 has differential inputs and high impedance
push-pull outputs. The device has high input impedance and
its transconductance (gm) is directly proportional to the am-
plifier bias current (IABC).
High slew rate together with programmable gain make the
LM3080 an ideal choice for variable gain applications such
as sample and hold, multiplexing, filtering, and multiplying.
The LM3080N and LM3080AN are guaranteed from 0§Cto
a
70§C.
Features
YSlew rate (unity gain compensated): 50 V/ms
YFully adjustable gain: 0 to gm#RLlimit
YExtended gmlinearity: 3 decades
YFlexible supply voltage range: g2V to g18V
YAdjustable power consumption
Schematic and Connection Diagrams
TL/H/71481
Dual-In-Line Package
TL/H/71482
Top View
Order Number LM3080AN, LM3080M or LM3080N
See NS Package Number M08A or N08E
C1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (Note 2)
LM3080 g18V
LM3080A g22V
Power Dissipation 250 mW
Differential Input Voltage g5V
Amplifier Bias Current (IABC)2mA
DC Input Voltage aVSto bVS
Output Short Circuit Duration Indefinite
Operating Temperature Range
LM3080N or LM3080AN 0§Ctoa
70§C
Storage Temperature Range b65§Ctoa
150§C
Lead Temperature (Soldering, 10 sec.) 260§C
Electrical Characteristics (Note 1)
Parameter Conditions LM3080 LM3080A Units
Min Typ Max Min Typ Max
Input Offset Voltage 0.4 5 0.4 2 mV
Over Specified Temperature Range 6 5 mV
IABC e5mA 0.3 0.3 2 mV
Input Offset Voltage Change 5 mAsIABC s500 mA 0.1 0.1 3 mV
Input Offset Current 0.1 0.6 0.1 0.6 mA
Input Bias Current 0.4 5 0.4 5 mA
Over Specified Temperature Range 1 7 1 8 mA
Forward Transconductance (gm) 6700 9600 13000 7700 9600 12000 mmho
Over Specified Temperature Range 5400 4000 mmho
Peak Output Current RLe0, IABC e5mA5357mA
R
L
e
0 350 500 650 350 500 650 mA
RLe0300 300 mA
Over Specified Temperature Range
Peak Output Voltage
Positive RLe%,5mAsI
ABC s500 mAa12 a14.2 a12 a14.2 V
Negative RLe%,5mAsI
ABC s500 mAb12 b14.4 b12 b14.4 V
Amplifier Supply Current 1.1 1.1 mA
Input Offset Voltage Sensitivity
Positive DVOFFSET/DVa20 150 20 150 mV/V
Negative DVOFFSET/DVb20 150 20 150 mV/V
Common Mode Rejection Ratio 80 110 80 110 dB
Common Mode Range g12 g14 g12 g14 V
Input Resistance 10 26 10 26 kX
Magnitude of Leakage Current IABC e0 0.2 100 0.2 5 nA
Differential Input Current IABC e0, Input eg4V 0.02 100 0.02 5 nA
Open Loop Bandwidth 2 2 MHz
Slew Rate Unity Gain Compensated 50 50 V/ms
Note 1: These specifications apply for VSeg15V and TAe25§C, amplifier bias current (IABC)e500 mA, unless otherwise specified.
Note 2: Selection to supply voltage above g22V, contact the factory.
2
Typical Performance Characteristics
Input Offset Voltage Input Offset Current Input Bias Current
Peak Output Current Common Mode Range
Peak Output Voltage and
Amplifier Supply Current
Total Power Dissipation Leakage Current Input Leakage
Transconductance Input Resistance Amplifier Bias Current
Amplifier Bias Voltage vs
TL/H/71483
3
Typical Performance Characteristics (Continued)
Input and Output Capacitance
TL/H/71484
Output Resistance
TL/H/71485
Leakage Current Test Circuit
TL/H/71486
Differential Input Current Test Circuit
TL/H/71487
Unity Gain Follower
TL/H/71488
4
Physical Dimensions inches (millimeters)
Molded Package SO (M)
Order Number LM3080M
NS Package Number M08A
5
LM3080 Operational Transconductance Amplifier
Physical Dimensions inches (millimeters) (Continued)
Molded Dual-In-Line Package (N)
Order Number LM3080AN or LM3080N
NS Package Number N08E
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor
Corporation Europe Hong Kong Ltd. Japan Ltd.
1111 West Bardin Road Fax: (
a
49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309
Arlington, TX 76017 Email: cnjwge
@
tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408
Tel: 1(800) 272-9959 Deutsch Tel: (
a
49) 0-180-530 85 85 Tsimshatsui, Kowloon
Fax: 1(800) 737-7018 English Tel: (
a
49) 0-180-532 78 32 Hong Kong
Fran3ais Tel: (
a
49) 0-180-532 93 58 Tel: (852) 2737-1600
Italiano Tel: (
a
49) 0-180-534 16 80 Fax: (852) 2736-9960
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.