January 2010 Doc ID 16487 Rev 2 1/9
9
T12T
Snubberless™, logic level and standard 12 A Triacs
Features
■Medium current Triac
■High static and dynamic commutation
■Low thermal resistance with clip bonding
■Packages is RoHS (2002/95/EC) compliant
■600 V VRM
Applications
■Value sensitive application
■General purpose ac line load switching
■Motor control circuits in power tools
■Small home appliances, lighting
■Inrush current limiting circuits
■Overvoltage crowbar protection
Description
Available in through-hole, the T12T series of
Triacs can be used as on/off or phase angle
control function in general purpose ac switching
where high commutation capability is required.
This series can be designed-in in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
Table 1. Device summary
Order code Symbol Value
T1220T-6I
T1235T-6I
IGT 3Q
Snubberless 20 / 35 mA
T1225T-6I IGT 4Q
standard 25 mA
T1210T-6I IGT 3Q
logic level 10 mA
A2
G
A1
G
A2
A1
TO-220AB insulated
(T12xxT-6I)
www.st.com
Characteristics T12T
2/9 Doc ID 16487 Rev 2
1 Characteristics
Table 2. Absolute maximum ratings (limiting values; Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
IT(RMS) On-state rms current (full sine wave) Tc = 88 °C 12 A
ITSM
Non repetitive surge peak on-state current (full
cycle, Tj initial = 25 °C)
F = 50 Hz tp = 20 ms 90 A
F = 60 Hz tp = 16.7 ms 95
I²tI
²t Value for fusing tp = 10 ms 54 A²s
dI/dt Critical rate of rise of on-state current IG = 2 x IGT
tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs
VDSM /
VRSM
Non repetitive surge peak off-state
voltage tp = 10 ms Tj = 25 °C VDRM/VRRM
+ 100 V
IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg Storage junction temperature range - 40 to + 150 °C
TjOperating junction temperature range - 40 to + 125 °C
T12T Characteristics
Doc ID 16487 Rev 2 3/9
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant
T12xxT
Unit
T1210T T1220T T1225T T1235T
IGT (1) VD = 12 V RL = 30 Ω
I - II - III MAX. 10 20 25 35 mA
IV 40
VGT
VD = VDRM, RL = 3.3 kΩ,
Tj = 25 °C ALL MAX. 1.3 V
VGD
VD = VDRM, RL = 3.3 kΩ,
Tj = 125 °C ALL MIN. 0.2 V
IH (2) IT = 500 mA MAX. 10 15 20 30 mA
ILIG = 1.2 IGT
I - III
MAX.
20 35 40 50
mAIV 40
II 30 40 60 80
dV/dt (2) VD = 67% VDRM, gate open Tj = 125 °C MIN. 100 1000 100 2000 V/µs
Tj = 150 °C(3) 50 500 50 1000
(di/dt)c (2)
(dV/dt)c = 0.1 V/µs
Tj = 125 °C
MIN.
77
A/ms
(dV/dt)c = 10 V/µs 3 3
Without snubber 6 12
(dV/dt)c = 0.1 V/µs
Tj = 150 °C(3)
33
(dV/dt)c = 10 V/µs 1 1
Without snubber 3 10
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
3. derating information for excess temperature above Tj max.
Table 4. Static characteristics
Symbol Test conditions Value Unit
VT (1) ITM = 17 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V
VTO (1) Threshold voltage Tj = 125 °C MAX. 0.85 V
RD (1) Dynamic resistance Tj = 125 °C MAX. 35 mΩ
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C MAX. 5µA
Tj = 125 °C 1
mA
VD = 0.9 x VDRM Tj = 150 °C(2) TYP. 1.9
1. for both polarities of A2 referenced to A1.
2. derating information for excess temperature above Tj max.
Characteristics T12T
4/9 Doc ID 16487 Rev 2
Table 5. Thermal resistance
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) 2.6 °C/W
Rth(j-a) Junction to ambient (DC) 60 °C/W
Figure 1. Maximum power dissipation versus
rms on-state current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0123456789101112
P(W)
180°
I
T(RMS)
(A)
α=180°
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0 25 50 75 100 125
I
T(RMS)
(A)
α=180°
TC(°C)
Figure 3. On-state rms current versus
ambient temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125
IT(RMS)(A)
α=180°
Ta(°C)
1.0E -02
1.0E -01
1.0E+00
1.0E -03 1.0E -02 1.0E -01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
K=[Zth/Rth]
Zth(j-c) Zth(j-a)
tP(s)
Figure 5. On state characteristics
(maximum values)
Figure 6. Surge peak on state current versus
number of cycles
1
10
100
012345
ITM (A)
Tj=25 °C
Tj=125 °C
Tjmax :
Vto = 0.85 V
Rd= 35 mΩ
VTM (V)
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
I
TSM
(A)
Repetitive
TC=88 °C
One cycle
t=20ms
Number of cycles
j
Non repetitive
T initial=25°C
T12T Characteristics
Doc ID 16487 Rev 2 5/9
Figure 7. Non repetitive surge peak on state
current for a sinusoidal
Figure 8. Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
10
100
1000
0.01 0.10 1.00 10.00
I
TSM
(A), I²t (A²s)
Tjinitial=25°C
dI/dt limitation: 50 A/µs
ITSM
I²t
tP(ms)
pulse with width t < 10 ms and corresponding value of I T
p
2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
IGT,V
GT[Tj]/I
GT,V
GT[Tj=25 °C]
VGT Q1-Q2-Q3
GT
IQ3
IGT Q1-Q2
Tj(°C)
typical values
Figure 9. Relative variation of holding
current and latching current versus
junction temperature
Figure 10. Relative variation of critical rate of
decrease of main current versus
(dV/dt)c
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
IH,I
L[Tj]/I
H,I
L[Tj=25 °C]
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
IH,I
L[Tj]/I
H,I
L[Tj=25 °C]
I
L
I
H
T
j
(°C)T
j
(°C)
typical values
0
1
2
3
4
5
6
7
25 50 75 100 125
dV/dt [T
j
]/dV/dt[T
j
=125 °C]
VD=VR=402 V
Tj(°C)
typical values
Logic Level and Snubberless types
Figure 11. Relative variation of critical rate of
decrease of main current versus
junction temperature
Figure 12. Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
0
1
2
3
4
5
6
7
8
25 50 75 100 125
T
j
(°C)
(dI/dt)C[T j]/(dI/dt)c[T j=125 °C]
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125
Tj(°C)
IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=125°C;7 00V]
V
DRM
=V
RRM
=400 V
V
DRM
=V
RRM
=600 V
V
DRM
=V
RRM
=600 V
V
DRM
=200 V
RRM
=V
Ordering information scheme T12T
6/9 Doc ID 16487 Rev 2
2 Ordering information scheme
Figure 13. Ordering information scheme
T 12 10 T - 6 I
Triac
Current
Sensitivity
Application specific
Voltage
Package
I = TO-220AB-Ins.
12 = 12 A
10 = 10 mA
20 = 20 mA
25 = 25 mA
35 = 35 mA
6 = 600 V
T12T Package mechanical data
Doc ID 16487 Rev 2 7/9
3 Package mechanical data
●Epoxy meets UL94, V0
●Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6. TO-220AB insulated dimensions
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M2.60 0.102
C
b2
c2
F
Ø I
L
A
a1
a2
B
e
b1
I4
l3
l2
c1
M
Ordering information T12T
8/9 Doc ID 16487 Rev 2
4 Ordering information
5 Revision history
Table 7. Ordering information
Order code Marking Package Weight Base qty Delivery mode
T1210T-6I T1210T-6I
TO-220AB-ins. 2.3 g 50 Tube
T1220T-6I T1220T-6I
T1225T-6I T1225T-6I
T1235T-6I T1235T-6I
Table 8. Document revision history
Date Revision Changes
03-Dec-2009 1 Initial release.
18-Jan-2010 2 Updated pag.1.
T12T
Doc ID 16487 Rev 2 9/9
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