MOTOROLA SC {IXSTRS/R FF Ab pe Beau7asy OoOeo0le b i 6367254 MOTOROLA SC CXSTRS/R F) _ 96D 82012 Bo | 7 . . i < 3i MAXIMUM RATINGS 13 25 i Rating Symbol! Value Unit | Drain-Source Voltage Vos 25 Vde Gate-Source Voltage Ves 25 Vde M MBFJ3 10 i Gate Current Ig 10 mAdc | CASE 318-02/03, STYLE 10 THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) Characteristic Symbol Max Unit i Total Device Dissipation FR-5 Board,* Pp 225 mw 2 Source Ta = 25 Derate above 25C 18 mWPrc 3 3 Thermal Resistance Junction to Ambient Rasa 556 sCimwW { se Gate Tota! Device Dissipation Pp 300 mw 2 Alumina Substrate,** Ta = 25C 1 Drain Derate above 25C 2.4 mWwrc Thermal Resistance Junction to Ambient Rasa 417 CcimW JFET Junction and Storage Temperature Ty. Tstg 150 C VHF/UHF AMPLIFIER *FR-5 = 1.0 0.75 x 0.62 in. . **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. TRANSISTOR DEVICE MARKING N-CHANNEL | MMBFJ310 = 6T | ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symbol | Min Typ Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage ViBRIGSS 25 - ~ Vde (ig = 1.0 pAdc, Vps = 0) Gate Reverse Current I6ss Wes = 15 V) , - - -1.0 nAdc (Veg = 15 V, Ta = 126C) _ _ -1.0 pAdc Gate Source Cutoff Voltage VGS(off} 2.0 _ -6.5 Vde (Vpg = 10 Vde, Ip = 1.0 nAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Ipss 24 - 60 mAdc (Vps = 10 Vde, Veg = 0) Gate-Source Forward Voltage Vasit) - _ 1.0 Vde (ig = 1.0 mAdc, Vos = 0) SMALL-SIGNAL CHARACTERISTICS . Forward Transfer Admittance IYts! 8.0 - 18 mmhos (Vpg = 10 Vde, Ip = 10 mAdc, f = 1.0 kHz) Output Admittance Vosl _ - 200 pmhos (Vpg = 10 Vde, Ip = 10 mAdo, f = 1.0 KHz) input Capacitance Ciss _ _ 5.0 pF (Vgs = 10 Vdc, Vpg = 0 Vde, f = 1.0 MHz) Reverse Transfer Capacitance Criss _ _ 2.6 pF (Vgs = 10 Vde, Vpg = 0 Vdc, f = 1.0 MHz) Equivalent Short-Circuit Input Noise Voltage en - 10 ad nViVHz (Vpg = 10 Vde, lp = 10 mAde, f = 100 Hz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS z 3-77MOTOROLA SC LXSTRS/R FI Sb dE Bese7254 ooaeoe? 8 "63672 54 MOTOROLA MAXIMUM RATINGS =~ SC X STRS/R FD). 96D 82027. BD | T- 37-23 Value Rating Symbol 404 404A Unit Collector-Emitter Voltage 24 35 VcEO MMBT404 Vde Collector-Base Voltage Vcspo 25 40 MMBT404A Vde Emitter-Base Voltage Veso 25 Vde Collector Current Continuous 150 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) mAdc THERMAL CHARACTERISTICS Characteristic Symbol Unit 3 Collector Total Device Dissipation FR-S Board,* 225 Ta = 28C Derate above 25C Pp 1.8 mw mwrc Base Thermal Resistance Junction to Ambient Rea 556 oy) *CimWw Total Device Dissipation 300 Alumina Substrate,** Ta = 25C Derate above 25C Pp 24 2 Emnter mW mwWwrce Thermal Resistance Junction to Ambient 417 Raa CimWw 150 Junction and Storage Temperature Ty. Tstq CHOPPER TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING PNP SILICON [ MMBT404 = 2M; MMBT404A = 2N ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic L OFF CHARACTERISTICS | Symbol | Min Typ Max i Unit | Collector-Emitter Breakdown Voltage {lc = 10 mAdge, Ig = 0) MMBT404 MMBT404A V(BR)CEO Vde 24 35 Collector-Base Breakdown Voltage {ic = 10 pAdc, ie = 0) MMBT404 MMBT404A V(BRICBO Vde 25 40 Emitter-Base Breakdown Voltage (IE = 10 pAde, Ic = 0) MMBT404 MMBT404A V(BRIEBO Vde 12 25 Collector Cutoff Current (Vcp = 10 Vde, Ip = 0) IcBo 100 Emitter Cutoff Current (Vee = 10 Vde, Ic = 0} 'EBO 100 ON CHARACTERISTICS DC Current Gain (Ic = 12 mAdc, Voce = 0.15 Vdc} hre 30 400 Coltector-Emitter Saturation Voltage (ig = 12 mAde, Ig = 0.4 mAdc) (Ic = 24 mAde, Ip = 1.0 mAdc} VcE(sat) Vde 0.15 0.20 Base-Emitter Saturation Voltage (ig = 12 mAde, Ip = 0.4 mAdc} (Ic = 24 mAde, Ip = 1.0 mAdc} VBE(sat) Vde 1.0 SMALL-SIGNAL CHARACTERISTICS Output Capacitance (Vog = 6.0 Vde, le = 0) SWITCHING CHARACTERISTICS | Cobo | 20 | pF Delay Time (Veo = 10 Vde, Ic = 10 mAdc) (Figure 1) tg 43 ns Rise Time {lpi = 1.0 mAdc, VBEfoft) = 14 Vdc} tr 180 ns Storage Time (Vcc = 10 Vde, Ic = 10 mAdc) ts 675 ns Fall Time {lg7 = Ig2 = 1.0 mAdc) (Figure 1) tf 160 ns MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-92MOTOROLA SC {XSTRS/R FI Fb DE Besnzesy 004e0c4 oO I [ 6367254 MOTOROLA SC (XSTRS/R F) 96D 82028 Dp MMBT404;A- ~ > T- 37 2 3 FIGURE 1 SWITCHING TIME TEST CIRCUIT Ves Vcc = -10V 10k T 0.1 pF Scope Vin 51 Vin VBB (Volts) (Volts) ton: ta, tr 12 + 1.4 toff, ts and tf +20.6 11.6 Voltages and resistor values shown are for i = 10 mA, Ic/ig = 10 and Ig1 = ipa MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-93MOTOROLA SC {XSTRS/R Ft 46 Def eae7254 coseoes 1 [ 54 MOTOROLA SC (XSTRS/R FD 96D 82029 OD 8367254 MOTOROLA SC (XSTRS/R F) T= 3/-1F MAXIMUM RATINGS Rating Symbol Value Unit Collactor-Emitter Voltage VCEO 15 Vde MMBT918 Collector-Base Voltage VCBO 30 Vde Emitter-Base Voltaga VEBO 3.0 Vde CASE 318-02/03, STYLE 6 Collectar Current Continuous Ic 350 mAdc SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FA-5 Board,* Pp 225 mW Ta = 256C | Derate above 25C 18 mWFC ; ge Base ' Thermal Resistance Junction to Ambient RJA 556 CimW 2 2 Emitter Total Device Dissipation Pp 300 mW : Alumina Substrats,** Ta = 25C Derate above 25C 2.4 mWwrc Thermal Resistance Junction to Ambient ReJA 417 CimWw Junction and Storage Temperature Ty. Tstg 150 C VHF/UHF TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING | MmBT918 = 38 i 3 Collector : NPN SILICON ELECTRICAL CHARACTERISTICS (Tp = 25C unless otherwise noted.) Characteristic | Symbol Min Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VIBRICEO 15 - Vde (Ic = 3.0 mAdc, Ig = 0) Collector-Base Breakdown Voltage ViBRICBO 30 - Vde (ic = 1.0 wAdc, IE = 0} ' Emitter-Base Breakdown Voltage VIBR)EBO 3.0 - Vde \ (ig = 10 pAde, Ic = 0) Collector Cutoff Current IcBo 50 nAdc (Vop = 15 Vde, Ie = 0} ON CHARACTERISTICS OC Current Gain hee 20 - - (Ig = 3.0 mAdc, Voce = 1,0 Vde} Collector-Emitter Saturation Voltage VCE(sat) _ 0.4 Vde (Ic = 10 mAdc, Ig = 1.0 mAdc) Base-Emitter Saturation Voltage VBE(sat) _ 1.0 Vde (Ic = 10 mAde, Ig = 1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 600 _ MHz (Ic = 4.0 mAdc, Vee = 10 Vde, f = 100 MHz) i Output Capacitance Cobo pF i (Vcg = 0 Vde, IE = 0, f = 1.0 MHz) - 3.0 (Vog = 10 Vdc, Ie = 0, f = 1.0 MHz) - 17 Input Capacitance Cibo _ 2.0 pF (Veg = 0.5 Vde, Ic = 0, f = 1.0 MHz) Noise Figure NF _ 6.0 dB (ic = 1.0 mAdc, Voge = 6.0 Vde, Rg = 509, f = 60 MHz) (Figure 1) Power Output Pout 30 - mW (lc = 8.0 mAde, Vg = 16 Vde, f = 500 MHz) Common-Emitter Amplifier Power Gain Gpe 11 _ dB (Ig = 6.0 mAdc, Veg = 12 Vdc, f = 200 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-94MOTOROLA SC {XSTRS/R FI ' 6367254 MOTOROLA SC CXSTRS/R F) 96D 82030. D MMBT918 T-31-15 FIGURE 1 NF, Gpe MEASUREMENT CIRCUIT 20-200 VBB Vec EXTERNAL 100 k * IC 1000 pF Bypass 0.018 uF (iy) 0.018 pF , 6 50 0 J 0.018 pF 0.018 wF NF Test Conditions Ic = 1.0 Amp VcE = 6.0 Volts Rg = 500 f = 60 MHz Gpe Test Conditions Ic = 6.0 mA VcE = 12 Volts f = 200 MHz MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-95 qb DE fe3e7254 ooszoz0 a |