©2004 Fairchild Semiconductor Corporation
May 2004
ISL9R3060G2, ISL9R3060P 2 Rev. C3
ISL9R3060G2, ISL9R3060P2
ISL9R3060G2, ISL9R3060 P2
30A, 600V Stealth™ Diode
General Description
The ISL9R3060G2 and ISL9R3060P2 are Stealth™
diodes optimized for low loss performance in high
frequency hard switched applications. The S tealth™ family
exhibits low reverse recovery current (IRRM) and
exceptionally soft recovery under typical operating
conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low IRRM and short ta phase reduce loss
in switching transistors. The soft recovery minimizes
ringing, expanding the range of conditions under which the
diode may be operated without the use of additional
snubber circuitry. Consider using the Stealth™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Formerly developmental type TA49411.
Features
• Soft R e c o very . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2
• Fast R e c o very . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns
• Ope ra ti n g Temper a ture . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FW D
• Snubber Diode
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current 30 A
IFRM Repetitive Peak Surge Current (20kHz Square Wave) 70 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A
PDPower Dissipation 200 W
EAVL Avalanche Energy (1A, 40mH) 20 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334 300
260 °C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
(FLANGE)
CATHODE
(BOTTOM SIDE
CATHODE
ANODE
METAL)
JEDEC TO-220ACJEDEC STYLE 2 LEAD TO-247
ANODE
CATHODE
Package Symbol
©2004 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P 2 Rev. C3
ISL9R3060G2, ISL9R3060P2
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Tape Width Quantity
R3060G2 ISL9R3060G2 TO-247 - -
R3060P2 ISL9R3060P2 TO-220AC - -
Symbol Parameter Test Conditions Min Typ Max Units
IRInstantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
TC = 125°C - - 1.0 mA
VFInstantaneous Forward Voltage IF = 30A TC = 25°C - 2.1 2.4 V
TC = 125°C - 1.7 2.1 V
CJJunction Capacitance VR = 10V, IF = 0A - 120 - pF
trr Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 27 35 ns
IF = 30A, dIF/dt = 100A/µs, VR = 30V - 36 45 ns
trr Reverse Recovery Time IF = 30A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
-36-ns
IRRM Maximum Reverse Recovery Current - 2.9 - A
QRR Reverse Recovery Charge - 55 - nC
trr Reverse Recovery Time IF = 30A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
-110- ns
S Softness Factor (tb/ta)-1.9-
IRRM Maximum Reverse Recovery Current - 6 - A
QRR Reverse Recovery Charge - 450 - nC
trr Reverse Recovery Time IF = 30A,
dIF/dt = 1000A/µs,
VR = 390V,
TC = 125°C
-60-ns
S Softness Factor (tb/ta) - 1.25 -
IRRM Maximum Reverse Recovery Current - 21 - A
QRR Reverse Recovery Charge 730 - nC
dIM/dt Maximum di/dt during tb- 800 - A/µs
RθJC Thermal Resistance Junction to Case - - 0.75 °C/W
RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
©2004 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P 2 Rev. C3
ISL9R3060G2, ISL9R3060P2
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current Figure 6. Maximum Reverse Recover y Current vs
dIF/dt
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
60
50
40
00 1.0 2.0 3.0
30
20
10
0.5 1.5 2.5
25oC
175oC
100oC
150oC
125oC
10
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
100
100 200 500 600400
1000
1
0.1
175oC
25oC
100oC
300
5000
75oC
150oC
125oC
IF, FORWARD CURRENT (A)
0
0
20
40
60
80
100
20 60
t, RECOVERY TIMES (ns)
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
VR = 390V, TJ = 125°C
10 30 40 50
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
90
70
50
30
10
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
0
20
40
60
80
120
t, RECOVERY TIMES (ns)
VR = 390V, TJ = 125°C
tb AT IF = 60A, 30A, 15A
1000 16001400400200 600 800 1200
ta AT IF = 60A, 30A, 15A
100
IF, FORWARD CURRENT (A)
4
8
10
12
14
18
20
IRRM, MAX REVERSE RECOVERY CURRENT (A)
dIF/dt = 800A/µs
dIF/dt = 500A/µs
dIF/dt = 200A/µs
VR = 390V, TJ = 125°C
020 6010 30 40 50
6
16
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
0
5
10
15
20
25
1000 1600
VR = 390V, TJ = 125°C IF = 60A
IF = 15A
IRRM, MAX REVERSE RECOVERY CURRENT (A)
1400400200 600 800 1200
30
IF = 30A
©2004 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P 2 Rev. C3
ISL9R3060G2, ISL9R3060P2
Figure 7. Reverse Recovery Softness Factor vs
dIF/dt Figure 8. Reverse Recovery Charge vs dIF/dt
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves ( C ontinued)
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
0.5
1.0
1.5
2.0
2.5 VR = 390V, TJ = 125°C
IF = 60A
IF = 30A
IF = 15A
S, REVERSE RECOVERY SOFTNESS FACTOR
1000 16001400400200 600 800 1200
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
200
400
600
800
1000
1200 VR = 390V, TJ = 125°C IF = 60A
IF = 30A
IF = 15A
QRR, REVERSE RECOVERY CHARGE (nC)
1000 16001400400200 600 800 1200
400
0
800
600
200
1000
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0.1 1 10010
t, RECTANGULAR PULSE DURATION (s)
10-5 10-2 10-1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
0.01 10-4 10-3
SINGLE PULSE
100
0.1
101
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUT Y FA C TOR : D = t 1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
1.0
©2004 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P 2 Rev. C3
ISL9R3060G2, ISL9R3060P2
Test Circuit and Waveforms
Figure 11. trr Test Circuit Figure 12. trr Waveforms and Definitions
Figure 13. Avalanche Energy Test Circuit Figure 14. Ava lan che C urr ent and Voltage
Waveforms
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
VDD = 50V
IV
t0 t1 t2
IL
VAVL
t
IL
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF F AIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
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effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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