Sep.2000
K
1.
2.
3.
4.
5.
1.
2.
3.
4.
5.
SNR
VNC
FNO
VN1
CN1
VP1
SPR
CP1
VPC
FPO
N SIDE P SIDE
G
F
M
L
0.64 MM SQ. PIN
(10 TYP.)
HH
C
A
Q
J
E
B
J
D
K
T
1P
N
C2E1 E2 C1
21345
2345
S - DIA.
(4 TYP.)
P - M6 THD.
(3 TYP.)
N - DIA.
(4 TYP.) R (8 TYP.)
SINK
SENS
OUT2
OUT1
GND
TEMP
VCC
FO
SR
IN
VN1
FNO
SNR
CN1
VNC
C2E1
E2
SINK
SENS
OUT2
OUT1
GND
TEMP
VCC
FO
SR
IN
C1
VP1
FPO
SPR
CP1
VPC
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
uComplete Output Pow er
Circuit
uGate Drive Circuit
uProtection Logic
– Shor t Circuit
– Over Current
– Ov er Temperature
– Under Voltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM200DSA120 is a 1200V,
200 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes Volts (x 10)
PM 200 120
Dimensions Inches Millimeters
A 5.12 130.0
B 4.33±0.010 110.0±0.25
C 2.76 70.0
D 2.05±0.010 52.0±0.25
E 1.18 30.0
F 1.14 +0.04/-0.02 29.0 +1/-0.5
G 1.02 26.0
H 0.98 25.0
J 0.71 18.0
Dimensions Inches Millimeters
K 0.55 14.0
L 0.51 13.0
M 0.28 7.0
N 0.26 Dia. Dia. 6.5
P M6 Metric M6
Q 0.14 3.5
R 0.100 2.54
S 0.08 Dia. Dia. 2.0
T 0.016 0.42
Outline Drawing and Circuit Diagram
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLAT-B ASE TYPE
INSULATED PACKAGE
Sep.2000
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol Ratings Units
Power Device Junction Temperature Tj-20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temper ature TC-20 to 100 °C
Mounting Torque, M6 Mounting Screws — 3.92~5.88 N · m
Mounting Torque, M6 Main Terminal Screws — 3.92~5.88 N · m
Module Weight (Typical) — 630 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part) VCC(prot.) 800 Volts
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply Voltage (Applied between VP1-VPC, VN1-VNC)V
D20 Volts
Input Voltage (Applied betw een CP1-VPC, CN1-VNC)V
CIN 10 Volts
Fault Output Supply Voltage (Applied between Fpo-Vpc and Fno-Vnc)V
FO 20 Volts
Fault Output Current (Sink Current at FPO, FNO Terminal) I FO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 5V) VCES 1200 Volts
Collector Current, (Tc = 25°C) IC200 Amperes
Peak Collector Current, (Tc = 25°C) ICP 400 Amperes
Supply Voltage (Applied between C1 - E2) VCC 900 Volts
Supply Voltage, Surge (Applied between C1 - E2) VCC(surge) 1000 Volts
Collector Dissipation PC1140 Watts
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.2000
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V 240 360 — Amperes
Short Circuit Trip Level Inverter Par t SC -20 °C ≤ T ≤ 125°C, VD = 15V 320 540 — Amperes
Over Current Delay Time t off(OC) VD = 15V — 5 — µs
Over Temperature Protection OT Trip Le vel 100 110 120 °C
OTrReset Level 85 95 105 °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UVrReset Level — 12.5 — Volts
Supply V oltage VDApplied between VP1-VPC, VN1-VNC 13.5 15 16.5 Volts
Circuit Current IDVD = 15V, V CIN = 5V, VN1-VNC —2330mA
VD = 15V, VCIN = 5V, VXP1-VXPC —2330mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) CP1-VPC, CN1-VNC 1.7 2.0 2.3 Volts
PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms
SXR Terminal Output Voltage V SXR Tj ≤125°C, Rin = 6.8 kΩ (SPR, SNR) 4.5 5.1 5.6 Volts
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.2000
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C——1mA
VCE = VCES, Tj = 125°C——10mA
Emitter-Collector Voltage V EC -IC = 200A, VD = 15V, VCIN = 5V — 2.5 3.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, V CIN = 0V, IC = 200A — 2.3 3.2 Volts
VD = 15V, VCIN = 0V, I C = 200A, — 2.1 2.9 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.5 1.4 2.5 µs
trr VD = 15V, V CIN = 0 ↔ 5V — 0.2 0.4 µs
tC(on) VCC = 600V, IC = 200A — 0.4 1.0 µs
toff Tj = 125°C — 2.0 3.5 µs
tC(off) — 0.6 1.1 µs
Thermal Characteristics
Characteristic Symbol Condition Min. Ty p. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each IGBT — — 0.11 °C/Watt
Rth(j-c)F Each FWDi — — 0.18 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, — — 0.038 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across C1-E2 Terminals 0 ~ 800 Volts
VDApplied between VP1-VPC, VN1-VNC 15 ± 1.5 Volts
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) CP1-VPC, CN1-VNC 4.0 ~ VSXR Volts
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tdead Input Signal ≥ 3.5 µs
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLA T-BASE TYPE
INSULATED PACKAGE
12 14
0
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, VD, (VOLTS)
SATURATION VOLTAGE VCE(sat), (VOLTS)
16 20 22
1
2
4
3
5
6
18
IC = 200A
VCIN = 0V
Tj = 25oC
Tj = 125oC
0080
0
1
2
3
4
5
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
240 320160
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
012
0
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
35
120
200
280
360
4
13
VD = 17V
Tj = 25oC
VCIN = 0V
15
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, ton, toff, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
ton
101102103
10-1
100
101
toff
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, tc(on), tc(off), (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
101102103
10-1
100
101
tc(off)
tc(on)
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
COLLECTOR REVERSE CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (µs)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
101102103
10-2
10-1
100
101
102
103
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
trr
Irr
00
100
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
Tj = 25oC
Tj = 125oC
VD = 15V
VCIN = 5V
0.5 1.0 1.5 2.0 2.5 3.0
101
102
103
DIODE FORWARD CHARACTERISTICS
40
60
80
100
120
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
SUPPLY VOLTAGE, VD, (VOLTS)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
13 15 17 19 21
TC = 25oC
0
60
80
100
120
140
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, TC, (oC)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
0 40 80 120 160
VD = 15V
0
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLA T-BASE TYPE
INSULATED PACKAGE
60
80
100
120
140
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, TC, (oC)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
0 40 80 120 160
VD = 15V
0
10
11
12
13
14
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
JUNCTION TEMPERATURE, TC, (oC)
UV TRIP-RESET LEVEL,
UV, UVr, (VOLTS)
0 16040 80 120
UV
UVr
0
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.11oC/W
10-2
10-3
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.18oC/W
10-2
10-3
