49
VTP Process Photodiodes VTP1012H
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a “flat”
wi ndow TO-46 pack ag e. Ca tho de is co mmon to
the case. These diodes exhibit low dark current
u nder reverse bi as and fast speed of resp onse.
PACKAGE DIMENSIONS inch (mm)
CASE 17 TO-46 HERMETIC
CHIP ACTIVE AREA: .0025 in
2
(1.6 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St orage Tem perat ure: -40°C to 110°C
Oper ati ng Temp er atur e: -4 0°C to 110°C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTI C TEST CONDIT IONS VTP1012H UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 10 17 µA
TC ISC ISC Temperature Coefficient 2850 K .20 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 350 mV
TC VOC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 50 V 7 nA
RSH Shunt Resistance H = 0, V = 10 mV .5 GΩ
CJJunction Capacitance H = 0, V = 15 V 6 pF
Re Responsivity 940 nm .011 A/(W/cm2)
SRSensitivity @ Peak .55 A/W
λrange Spectral Application Range 400 1150 nm
λpSpectral Respo nse - Peak 925 nm
VBR Breakdown Voltage 50 140 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±35 Degrees
NEP Noise Equiv alent Power 8.7 x 10-14 (Typ.)
D* Specif ic Detectivit y 1.5 x 10 12 (Typ.) WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
