Mar ki ng JY
1.9
0.950.951.0
2. 4
1. 3
2.9
0.4
Mar ki ng JY
SOT-23 Plastic-Encapsulated Diodes
BAV199LT1 SWITCHING DIODE
FEATURES
Power dissipation
PD: 225 mW (Tamb=25℃)
Forward Current
IF: 215 mA
Reverse Voltage
VR: 70 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 70 V
Reverse voltage leakage current IR V
R=70V 5 nA
Forward voltage VF
IF=1 mA
IF=10 mA
IF=50 mA
IF=150mA
900
1000
1100
1250
mV
Diode capacitance CD V
R=0V, f=1MHz 2 pF
Reverse recovery time t r r 3
µS
Unit: mm
SOT -23
Transys
Electronics
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M
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