BUZ 72A SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 72 A 100 V 9A 0.25 TO-220 AB C67078-S1313-A3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 C Values Unit A 9 Pulsed drain current IDpuls TC = 25 C 36 Avalanche current,limited by Tjmax IAR 10 Avalanche energy,periodic limited by Tjmax EAR 7.9 Avalanche energy, single pulse EAS mJ ID = 10 A, VDD = 25 V, RGS = 25 L = 885 H, Tj = 25 C 59 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 3.1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 Data Sheet V 55 / 150 / 56 1 05.99 BUZ 72A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 100 - - V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS 2.1 3 4 A IDSS VDS = 100 V, V GS = 0 V, Tj = 25 C - 0.1 1 VDS = 100 V, V GS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 6 A Data Sheet nA IGSS - 2 0.2 0.25 05.99 BUZ 72A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS 2 * ID * RDS(on)max, ID = 6 A Input capacitance 3 - 400 530 - 120 180 - 70 105 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 4.3 ns td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 10 15 - 45 70 - 55 75 - 40 55 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Data Sheet 3 05.99 BUZ 72A Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TC = 25 C Inverse diode direct current,pulsed - 36 V 1.4 1.6 ns trr - 170 C Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Data Sheet - - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge 9 V SD VGS = 0 V, IF = 20 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage - - 4 0.3 - 05.99 BUZ 72A Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 10 45 A W Ptot ID 35 8 7 30 6 25 5 20 4 15 3 10 2 5 1 0 0 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 160 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 2 K/W t = 52.0s p A D I / 100 s ZthJC V 10 0 DS (o n) = DS ID 10 1 C TC R 1 ms 10 -1 D = 0.50 10 ms 10 0.20 0 0.10 0.05 10 -2 0.02 DC 0.01 single pulse 10 -1 0 10 10 1 V 10 10 -3 -7 10 2 VDS Data Sheet 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 05.99 BUZ 72A Typ. output characteristics ID = (VDS) parameter: tp = 80 s 20 Ptot = 40W Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.80 l k j A ID a i VGS [V] 4.0 16 h a 14 b 4.5 c 5.0 d 5.5 e 6.0 f f 6.5 g 7.0 h 7.5 i 8.0 g 12 10 e 8 d 6 c j 9.0 k 10.0 l 20.0 b c d e f g h RDS (on) 0.60 0.50 0.40 0.30 i j 0.20 k 4 0.10 VGS [V] = b 2 a 4.5 4.0 a 0 0 2 4 6 8 V 0.00 0 11 2 b 5.0 c 5.5 4 d 6.0 e f 6.5 7.0 6 8 10 g 7.5 12 h i j k 8.0 9.0 10.0 20.0 14 16 VDS Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max V DS2 x ID x RDS(on)max 24 6.0 A S 20 ID 4.5 16 4.0 14 3.5 12 3.0 10 2.5 8 2.0 6 1.5 4 1.0 2 0.5 0.0 1 2 3 4 5 6 7 8 V 10 0 VGS Data Sheet 20 5.0 gfs 18 0 0 A ID 4 8 12 16 A 22 ID 6 05.99 BUZ 72A Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 6 A, VGS = 10 V 0.80 4.6 4.0 V VGS(th) RDS (on) 0.60 98% 3.6 typ 3.2 0.50 2.8 2.4 0.40 0.30 98% 2.0 typ 1.6 2% 1.2 0.20 0.8 0.10 0.4 0.00 -60 -20 20 60 100 C 0.0 -60 160 -20 20 60 100 C 160 Tj Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Coss Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V 10 -1 0.0 40 Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS 7 05.99 BUZ 72A Avalanche energy EAS = (Tj) parameter: ID = 10 A, VDD = 25 V RGS = 25 , L = 885 H Typ. gate charge VGS = (QGate) parameter: ID puls = 15 A 60 16 mJ V 50 EAS VGS 45 12 0,2 VDS max 0,8 VDS max 40 10 35 30 8 25 6 20 15 4 10 2 5 0 20 0 40 60 80 100 120 C 160 0 Tj 10 20 30 40 50 nC 70 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 120 V 116 V(BR)DSS114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Data Sheet 8 05.99