Ordering number : ENA0746C 2SK4124 N-Channel Power MOSFET http://onsemi.com 500V, 20A, 430m, TO-3P-3L Features * * * Low ON-resistance, low input capacitance, ultrahigh-speed switching Adoption of high reliability HVP process Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 500 V 30 V 20 A PW10s, duty cycle1% 60 A 2.5 W Allowable Power Dissipation PD 170 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS IAV 110 mJ 20 A Avalanche Current *2 Tc=25C (Our ideal heat dissipation condition)*1 *1 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=50V, L=500H, IAV=20A (Fig.1) *3 L500H, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7539-002 * Package : TO-3P-3L * JEITA, JEDEC : SC-65, TO-247, SOT-199 * Minimum Packing Quantity : 30 pcs./magazine 2SK4124-1E 4.8 15.6 5.0 1.5 Marking 7.0 3.2 Electrical Connection 16.76 10.0 13.6 3.5 18.4 19.9 2 K4124 LOT No. 1 20.0 2.0 3.0 1.0 2 3 3 1.4 1 5.45 0.6 1 : Gate 2 : Drain 3 : Source 5.45 TO-3P-3L Semiconductor Components Industries, LLC, 2013 July, 2013 51612 TKIM TC-00002752/40412 TKIM TC-00002745/D0507 TIIM TC-00001052/41807QB TIIM TC-00000661 No. A0746-1/7 2SK4124 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS IDSS ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) ID=8A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage min typ 3 VDS=10V, ID=10A 4.9 V 100 A 100 nA 5 9.7 See Fig.2 VDS=200V, VGS=10V, ID=20A 0.43 1200 pF 250 pF 55 pF 26.5 ns 95 ns 145 ns 58 ns 46.6 nC 8.7 nC 27.3 IS=20A, VGS=0V V S 0.33 VDS=30V, f=1MHz nC 1.0 1.3 V Fig.2 Switching Time Test Circuit VIN L VDD=200V 10V 0V 50 RG ID=10A RL=20 VIN D 2SK4124 VDD 50 Unit max 500 VDS=10V, ID=1mA Fig.1 Avalanche Resistance Test Circuit 10V 0V Ratings Conditions VOUT PW=10s D.C.0.5% G 2SK4124 P.G RGS=50 S Ordering Information Device 2SK4124-1E Package Shipping memo TO-3P-3L 30pcs./magazine Pb Free No. A0746-2/7 2SK4124 ID -- VDS 45 ID -- VGS 45 Tc=25C VDS=20V 15V 40 Tc= --25C 25C 40 10V 35 Drain Current, ID -- A Drain Current, ID -- A 35 8V 30 25 20 15 10 75C 25 20 15 10 6V 5 30 5 VGS=5V 0 0 0 5 10 15 20 25 0 30 Drain-to-Source Voltage, VDS -- V 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 1.2 2 IT11732 20 IT11733 RDS(on) -- Tc 1.0 ID=8A Static Drain-to-Source On-State Resistance, RDS(on) -- 0.8 0.6 Tc=75C 25C --25C 0.2 5 7 9 11 13 15 Gate-to-Source Voltage, VGS -- V 2 5 5C = Tc 3 --2 C 75 2 1.0 7 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 0.1 --25 50 75 100 125 150 IT11735 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT11737 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 5 25 VGS=0V IT11736 7 0 IS -- VSD 0.01 0.2 5 SW Time -- ID 1000 f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.2 3 2 5 3 0.1 0.3 3 2 5C 7 A =8 ID 0.4 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 10 =1 S , VG Case Temperature, Tc -- C VDS=10V 2 0.5 IT11734 | yfs | -- ID 3 0V 0.6 0 --50 0 3 0.7 --25C 0.4 0.8 Tc=7 5C 25C Static Drain-to-Source On-State Resistance, RDS(on) -- 0.9 1.0 td (off) 2 100 7 tf tr 5 td(on) 3 2 Ciss 1000 7 5 Coss 3 2 100 7 5 Crss 3 2 2 10 0.1 10 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT11738 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT11739 No. A0746-3/7 2SK4124 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 10 20 30 40 50 Total Gate Charge, Qg -- nC 0.1 7 5 3 2 Tc=25C Single pulse 2 3 5 7 1.0 2.0 1.5 1.0 0.5 2 3 5 7 10 2 3 5 7100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 10 s s Operation in this area is limited by RDS(on). 5 71000 IT16847 PD -- Tc 200 180 170 160 140 120 100 80 60 40 20 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT12248 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT12249 EAS -- Ta 120 Avalanche Energy derating factor -- % 1.0 7 5 3 2 0 1m s 10 10m 0m s DC s op era tio n ID=20A 10 7 5 3 2 IT12415 PD -- Ta 3.0 10 IDP=60A(PW10s) 0.01 0.1 0 0 ASO 100 7 5 3 2 VDS=200V ID=20A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT10478 No. A0746-4/7 2SK4124 Magazine Specification 2SK4124-1E No. A0746-5/7 2SK4124 Outline Drawing 2SK4124-1E Mass (g) Unit 1.8 mm * For reference No. A0746-6/7 2SK4124 Note on usage : Since the 2SK4124 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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