51612 TKIM TC-00002752/40412 TKIM TC-00002745/D0507 TIIM TC-00001052/41807QB TIIM TC-00000661 No. A0746-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
July, 2013
2SK4124
N-Channel Power MOSFET
500V, 20A, 430mΩ, TO-3P-3L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching
• Adoption of high reliability HVP process
• Avalanche resistance guarantee
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 500 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID20 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A
Allowable Power Dissipation PD2.5 W
Tc=25°C (Our ideal heat dissipation condition)*1
170 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 110 mJ
Avalanche Current *2 IAV 20 A
*1 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=500μH, IAV=20A (Fig.1)
*3 L≤500μH, single pulse
Package Dimensions
unit : mm (typ)
7539-002
Ordering number : ENA0746C
Product & Package Information
• Package : TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking Electrical Connection
K4124
LOT No.
1
3
2
1 : Gate
2 : Drain
3 : Source
TO-3P-3L
15.6 1.5
0.6
2.0
1.0
123
18.4
10.0
16.76
5.45 5.45
3.2 7.0
3.5 5.0
19.9
20.0
3.0
4.8
13.6
1.4
2SK4124-1E
2SK4124
No. A0746-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 500 V
Zero-Gate Voltage Drain Current IDSS V
DS=400V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward Transfer Admittance | yfs |VDS=10V, ID=10A 4.9 9.7 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=8A, VGS=10V 0.33 0.43 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 1200 pF
Output Capacitance Coss 250 pF
Reverse Transfer Capacitance Crss 55 pF
Turn-ON Delay Time td(on)
See Fig.2
26.5 ns
Rise Time tr 95 ns
Turn-OFF Delay Time td(off) 145 ns
Fall Time tf58 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=20A 46.6 nC
Gate-to-Source Charge Qgs 8.7 nC
Gate-to-Drain “Miller” Charge Qgd 27.3 nC
Diode Forward Voltage VSD IS=20A, VGS=0V 1.0 1.3 V
Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SK4124-1E TO-3P-3L 30pcs./magazine Pb Free
PW=10μs
D.C.≤0.5%
P.G RGS=50Ω
G
S
D
ID=10A
RL=20Ω
VDD=200V
VOUT
2SK4124
VIN
10V
0V
VIN
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4124
2SK4124
No. A0746-3/7
IT11732 IT11733
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
ID -- VDS ID -- VGS
0
0
45
40
30
35
25
20
15
10 3052515 20
10
5
15V
10V
VGS=5V
6V
8V
Tc=25°C
0
45
30
35
40
25
20
15
10
5
020181641221068 14
VDS=20V Tc= --25°C
25°C
75°C
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
IT11734 IT11735
IT11737
IT11736
IT11738 IT11739
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward T ransfer Admittance, | yfs | -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS RDS(on) -- Tc
IS -- VSD
| yfs | -- ID
RDS(on) -- VGS
3
0
1.2
1.0
0.6
0.8
151359711
0.4
0.2
ID=8A
Tc=75°C
25°C
--25°C
--50 --25 0 25 50 75 100 125 150
0
1.0
0.4
0.8
0.6
0.2
0.9
0.3
0.7
0.5
0.1
ID=8A, VGS=10V
0.1 23 57 23
1.0 23 5 5710
1.0
10
2
3
5
7
5
7
3
2
3VDS=10V
75°C
25°C
0.2 0.4 0.6 0.8 1.41.21.0
0.01
0.1
10
7
5
3
2
5
3
2
7
5
3
2
2
1.0
7
5
3
25°C
--25°C
Tc=75°C
VGS=0V
10
100
3
2
2
5
7
1000
3
5
7
0.1 1.0
23 57 23 5 10 23 577
VDD=200V
VGS=10V
td(off)
tr
tf
td(on)
0
7
100
10
1000
5
3
2
7
5
3
2
10000
7
5
3
2
5052535451510 30 4020
f=1MHz
Ciss
Coss
Crss
Tc= --25°C
2SK4124
No. A0746-4/7
Drain-to-Source Voltage, VDS -- V
A S O
Drain Current, ID -- A
IT12415
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
VGS -- Qg
0
0
1
2
3
4
5
6
7
8
5040
10
9
10 20 30
VDS=200V
ID=20A
IT16847
0.01
2
3
5
7
2
3
5
7
2
3
5
7
1.0
0.1
0.1 1.0
10
μ
s
100μs
10ms
1ms
DC operation
10 100 1000
23 7
10
2
3
5
7
100
ID=20A
Operation in
this area is
limited by RDS(on).
523 7523 7523 75
100ms
IDP=60A(PW≤10
μs)
Tc=25°C
Single pulse
0
020 40 60 80 100 120
3.0
2.5
140 160
2.0
1.5
1.0
0.5
IT12248
0
020 40 60 80 100 140120
100
80
120
140
160
170
180
60
40
20
200
160
IT12249
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
PD -- Ta PD -- Tc
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
IT10478
Ambient Temperature, Ta -- °C
2SK4124
No. A0746-5/7
Magazine Specifi cation
2SK4124-1E
2SK4124
No. A0746-6/7
Outline Drawing
2SK4124-1E
Mass (g) Unit
1.8
* For reference
mm
2SK4124
PS No. A0746-7/7
Note on usage : Since the 2SK4124 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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