Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regar ding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corpo r ation assumes no respon sibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HD26LS31
Quadruple Differential Line Drivers With 3 State Outputs
ADE-205-576 (Z)
1st. Edition
Dec. 2000
Description
The HD26LS31 features quadruple differential line drivers which satisfy the requirements of EIA standard
RS-422A. This device is designed to provide differential signals with high current capability on bus lines.
The circuit provides enable input to control all four drivers. The output circuit has active pull up and pull
down and is capable of sinking or sourcing 40 mA.
Logic Diagram
1A
2A
3A
4A
Enable G
Enable G
1Y
1Z
2Y
2Z
3Y
3Z
4Y
4Z
HD26LS31
2
Pin Arrangement
(Top view)
1
2
3
4
5
6
7
1A
GND
1Y
1Z
2Z
8
Enable G
2Y
2A
13
14
15
10
11
12
9
16 VCC
4A
4Y
4Z
Enable G
3Z
3Y
3A
Function Table
Input Enables Outputs
AG GYZ
HH X H L
LHXLH
HX L H L
LX L L H
XLHZZ
H : High level
L : Low level
X : Irrelevant
Z : High impedance (Off)
HD26LS31
3
Absolute Maximum Ratings
Item Symbol Ratings Unit
Supply Voltage VCC 7.0 V
Input Voltage VIN 7.0 V
Output Voltage VOUT 5.5 V
Power Dissipation PT1W
Storage Temperature Range Topr 0 to +70 °C
Lead Temperature Range Tstg –65 to +150 °C
Note: 1. The absolute maximum ratings are values which must not individually be exceeded, and
furthermore, no two of which may be realized at the same time.
Recommended Operating Conditions
Item Symbol Min Typ Max Unit Application Terminal
Supply Voltage VCC 4.75 5.0 5.25 V VCC
Output Current IOH –40 mA All Output
Output Current IOL 40 mA All Output
Operating Temperature Topr 0 25 70
HD26LS31
4
Electrical Characteristics (Ta = 0 to +70°C)
Item Symbol Min Typ*1Max Unit Application
Terminal Conditions
Input Voltage VIH 2.0 V All Inputs
VIL 0.8
Input Clamp Voltage VIK –1.5 VCC = 4.75 V, II = –18 mA
Output Voltage VOH 2.5 All Outputs VCC = 4.75 V IOH = –20 mA
VOH 2.4 IOH = –40 mA
VOL 0.5 IOL = 40 mA
Output Current IOZL –20 mA VCC = 5.25 V VO = 0.5 V
IOZH 20 VCC = 5.25 V VO = 2.5 V
Input Current II 0.1 mA All Inputs VCC = 5.25 V VI = 7 V
IIH ——20µAV
I = 2.7 V
IIL –0.36 mA VI = 0.4 V
Short Circuit Output
Current IOS*2–30 –150 All Outputs VCC = 5.25 V
Supply Current ICC —3280 V
CC VCC = 5.25 V
Notes: 1. All typical values are at VCC = 5 V, Ta = 25°C
2. Not more than one output should be shorted at a time and duration of the short circuit should not
exceed one second.
Switching Characteristics (VCC = 5 V, Ta = 25°C)
Item Symbol Min Typ Max Unit Application
terminal Test
circuit Conditions
Propagation Delay Time tPLH 14 20 ns All Outputs 1 CL = 30 pF
tPHL —1420ns
Output Enable Time tZH —2540ns 2 C
L = 30 pF, RL = 75
tZL —3745ns 3 C
L = 30 pF, RL = 180
Output Disable Time tHZ —2130ns 2 C
L = 10 pF
tLZ —2335ns 3 C
L = 10 pF
Complementary Output To
Output Skew 1 6 ns 1 CL = 30 pF
HD26LS31
5
Test Circuit 1
Output
Output
AZ
Y
Pulse Generator
PRR = 1MHz
Duty Cycle 50%
Zout = 50
Input
G
G
4.5 V
C =
30 pF
L
C =
30 pF
L
Note: 1. CL includes probe and jig capacitance.
Waveforms
Input 0.3 V
2.7 V
1.3 V 0 V
3 V
1.3 V
Output Y
OH
VOL
V
tPHL
tPLH tPHL
1.5 V 1.5 V
1.5 V 1.5 V
VOH
VOL
Output Z
2.7 V
0.3 V
trtf
Skew tPLH
Skew
HD26LS31
6
Test Circuit 2
VCC
G
AY
Z
S1
Pulse Generator
PRR = 1 MHz
Duty Cycle 50%
Zout = 50
G
Input
4.5 V Output
Output 180
180
75
S1
CL
75
CL
Note: 1. CL includes probe and jig capacitance.
Waveforms
Enable G
0.3 V
2.7 V
1.5 V 2.7 V
0 V
3 V
1.5 V 0.3 V
Enable G
Output
tZH
OH
V
1.5 V
tHZ
0.5 V
S1 Open
S1 : Closed
0 V
1.5 V
trtf
S1 : Open
HD26LS31
7
Test Circuit 3
VCC
G
AY
ZS2
Pulse Generator
PRR = 1 MHz
Duty Cycle 50%
Zout = 50
G
Input
4.5 V Output
Output
180
75
CL
75
CL
180
S2
Note: 1. CL includes probe and jig capacitance.
Waveforms
Enable G
0.3 V
2.7 V
1.5 V 2.7 V
0 V
3 V
1.5 V 0.3 V
Enable G
Output
tZL
OL
V
1.5 V
tLZ
0.5 V
S2 : Open
4.5 V
1.5 V
trtf
S2 : Closed
HD26LS31
8
HD26LS31 Line Driver Applications
The HD26LS31 is a line driver that meets the EIA RS-422A conditions, and has been designed to supply a
high current for differential signals to a bus line. Its features are listed below.
Operates on a single 5 V power supply.
High output impedance when power is off
Three-state output
On-chip current limiter circuit
Sink current and source current both 40 mA
A block diagram is shown in figure 1. The enable function is common to all four drivers, and either active-
high or active-low can be selected.
The output section consists of two output stages (the Y side and Z side), each of which has the same sink
current and source current capacity.
Input is TTL compatible, and an output current limiter circuit is built into the output stage as shown in
figure 2.
1A
2A
3A
4A
Enable G
Enable G
1Y
1Z
2Y
2Z
3Y
3Z
4Y
4Z
Figure 1 HD26LS31 Block Diagram
The output current limiter circuit consists of transistor Q1 and resistance R1, and operates when the voltage
drop on both sides of R1 reaches approximately 0.7 V. At this time the current, i, is as follows:
i = 0.7 (V) / 9 () 78 (mA)
When a current greater than this flows, Q1 is turned on, the Q2 base current flows to the output side, and the
flow of an excessively large output current is prevented.
However, since this type of current limiter circuit has the characteristics shown in figure 3, the output stage
power dissipation is large.
Therefore, when the output is shorted, this should be limited to a maximum of one second for one pin only.
The IOL vs. VOL characteristic for low-level output is shown in figure 4.
HD26LS31
9
An example of termination resistance connection when the HD26LS31 is used as a balanced differential
type driver is shown.
VCC
Output
Q3
R1
9
Q4
Q2
Q1
Figure 2 Output Stage Circuit Configuration
When termination resistance RT is connected between the two transmission lines, as shown in figure 7 the
current path situation is that current IOH on the side outputting a high level (in this case, the Y output)
flows to the side outputting a low level (in this case, the Z output) via RT, with the result that the low level
rise is large.
If termination resistance RT is dropped to GND on both transmit lines, as shown in figure 5 the current
path situation is that the current that flows into the side outputting a low level (in this case, the Z output) is
only the input bias current from the receiver. As this input bias current is small compared with the signal
current, it has almost no effect on the differential input signal at the receiver end.
Figure 6 shows the output voltage characteristics when termination resistance RT is varied.
Also, when used in a party line system, etc., the low level rises further due to the receiver input bias
current, so that it is probably advisable to drop the termination resistance to GND.
However, the fact that it is possible to make the value of RT equal to the characteristic impedance of the
transmission line offers the advantage of being able to hold the power dissipation on the side outputting a
high level to a lower level than in the above case.
Consequently, the appropriate use must be decided according to the actual operating conditions
(transmission line characteristics, transmission distance, whether a party line is used, etc.).
Figure 8 shows the output voltage characteristics when termination resistance RT is varied.
HD26LS31
10
5.0
4.0
3.0
2.0
1.0
0 –20 –40 –60 –80 –100
Output Current IOH (mA)
Output Voltage VOH (V)
V
CC
= 5.25 V
V
CC
= 4.75 V
VCC = 5.0 V Ta = 25°C
Figure 3 IOH vs. VOH Characteristics
0.5
0.4
0.3
0.2
0.1
0 1020304050
Output Current IOL (mA)
Output Voltage VOL (V)
VCC = 4.75 V
Ta = 25°C
VCC = 5.0 V
VCC = 5.25 V
Figure 4 IOL vs. VOL Characteristics
HD26LS31
11
Y
Z
"H"
"L"
IOH
RT
RT
IIN (Receiver)
RT = ZO
2
ZO is the transmission line characteristic
impedance
Figure 5 Example of Driver Use-1
5
2
1.0
0.5
0.2
0.1
0.0510 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k
Termination Resistance RT ()
Output Voltage VOH (Y), VOL (Z) (V)
VCC = 5 V
Ta = 25°C
Z
Y
"H" VOH
GND
RT
RT
VOL
VOH (Y)
VOL (Z)
Figure 6 Termination Resistance vs. Output Voltage Characteristics
Z
Y "H"
"L"
IOH
IOL
RT
IIN (Receiver)
RT = ZO
ZO is the transmission line characteristic
impedance
Figure 7 Example of Driver Use-2
HD26LS31
12
A feature of termination implemented as shown in figure 9 is that power dissipation is low when the duty of
the transmitted signal is high.
However, care is required, since if RT is sufficiently small, when the output on the pulled-up side goes low,
since the inverter transistor (Q 4 in figure 2) has no protection circuit, and so a large current will flow and
the output low level will rise.
Figure 10 shows the output voltage characteristics when termination resistance RT is varied.
With the method of using the driver described above, if termination resistance RT becomes sufficiently
small, the region within which the output current limiter circuit operates will be entered, as can be seen
from the I OH vs. VOH characteristics shown in figure 3. In this region, the output stage power dissipation is
large and the output voltage changes abruptly. A measure such as insertion of a capacitor in series with the
termination resistance is therefore necessary. Consequently, when selecting the transmission line, the
circuit termination resistance to be used requires careful consideration.
5
2
1.0
0.5
0.2
0.1
0.0510 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k
Termination Resistance RT ()
Output Voltage VOH (Y), VOL (Z) (V)
VOH (Y)
VOL (Z)
VCC = 5 V
Ta = 25°C
Z
"H" VOH
GND
RT
VOL
Y
Figure 8 Termination Resistance vs. Output Voltage Characteristics
VCC
RT
RT
Z
Y
Data input
Figure 9 Example of Driver Use-3
HD26LS31
13
5
2
1.0
0.5
0.2
0.1
0.0510 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k
Termination Resistance RT ()
Output Voltage VOH (Y), VOL (Z) (V)
VOL (Y)
VOH (Z) VCC = 5 V
Ta = 25°C
Z
"L" VOL
GND
RTVOH
YRT
VCC
Figure 10 Termination Resistance vs. Output Voltage Characteristic
HD26LS31
14
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DP-16
Conforms
Conforms
1.07 g
Unit: mm
6.30
19.20
16 9
81 1.3
20.00 Max
7.40 Max
7.62
0.25
+ 0.13
– 0.05
2.54 ± 0.25 0.48 ± 0.10
0.51 Min
2.54 Min 5.06 Max
0° – 15°
1.11 Max
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
FP-16DA
Conforms
0.24 g
Unit: mm
*Dimension including the plating thickness
Base material dimension
*0.22 ± 0.05
*0.42 ± 0.08
0.12
0.15
M
2.20 Max 5.5
10.06
0.80 Max
16 9
18
10.5 Max
+ 0.20
– 0.30
7.80
0.70 ± 0.20
0° – 8°
0.10 ± 0.10
1.15
1.27
0.40 ± 0.06
0.20 ± 0.04
HD26LS31
15
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
URL NorthAmerica : http://semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia : http://sicapac.hitachi-asia.com
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Colophon 2.0