Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
•Low Noise Figure:
1.7 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
•High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
•High Gain-Bandwidth
Product: 8.0 GHz Typical fT
•Cost Effective Ceramic
Microstrip Package
AT-41435
35 micro-X Package
Description
Agilent’s AT-41435 is a general
purpose NPN bipolar transistor
that offers excellent high fre-
quency performance. The AT-
41435 is housed in a cost effective
surface mount 100 mil micro-X
package. The 4 micron emitter-to-
emitter pitch enables this transis-
tor to be used in many different
functions. The 14 emitter finger
interdigitated geometry yields an
intermediate sized transistor with
impedances that are easy to match
for low noise and moderate power
applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near 50
Ω at 1 GHz, makes this device
easy to use as a low noise ampli-
fier.
The AT-41435 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
2
AT-41435 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 20
VCEO Collector-Emitter Voltage V 12
ICCollector Current mA 60
PTPower Dissipation [2,3] mW 500
TjJunction Temperature °C 150
TSTG Storage Temperature[4] °C -65 to 150
Thermal Resistance[2,5]:
θjc = 200°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5 mW/°C for TC > 100°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S21E|2Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 11.5
f = 4.0 GHz 6.0
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 19.0
VCE = 8 V, IC = 25 mA f = 4.0 GHz 18.5
G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 14.0
f = 4.0 GHz 9.5
NFOOptimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.3
f = 2.0 GHz 1.7 2.0
f = 4.0 GHz 3.0
GAGain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 18.5
f = 2.0 GHz 13.0 14.0
f = 4.0 GHz 10.0
fTGain Bandwidth Product: VCE = 8 V, IC = 25 mA GHz 8.0
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA —30 150 270
ICBO Collector Cutoff Current; VCB = 8 V µA 0.2
IEBO Emitter Cutoff Current; VEB = 1 V µA 1.0
CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF 0.2
Note:
1. For this test, the emitter is grounded.
3
AT-41435 Typical Performance, TA = 25°C
FREQUENCY (GHz)
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, I
C
= 10 mA.
GAIN (dB)
I
C
(mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
GAIN (dB)
0 10203040
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, I
C
= 25 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
24
21
18
15
12
9
6
3
0
8
6
4
2
0
NF (dB)
4
3
2
1
NF
O
(dB)
0.5 2.01.0 3.0 4.0 5.0
16
15
14
13
12
G
A
NF
O
NF
50 Ω
I
C
(mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
12
8
4
0
|S
21E
|
2
GAIN (dB)
0 10203040
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S
21E
|
2
1.0 GHz
10 V
4 V
G
A
NF
O
6 V
10 V
4 V
6 V
I
C
(mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
CE
= 8 V.
24
20
16
12
8
4
G
1 dB
(dB) P
1 dB
(dBm)
0 10203040
P
1dB
G
1dB
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V
CE
= 8 V.
I
C
(mA)
GAIN (dB)
0 10203040
6
4
2
0
NF
O
(dB)
16
14
12
10
8
G
A
NF
O
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
4
AT-41435 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA=25°C, VCE =8 V, I
C= 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .80 -32 28.0 24.99 157 -39.2 .011 82 .93 -12
0.5 .50 -110 21.8 12.30 108 -29.6 .033 52 .61 -28
1.0 .40 -152 16.6 6.73 85 -26.2 .049 56 .51 -30
1.5 .38 -176 13.3 4.63 71 -24.0 .063 59 .48 -32
2.0 .39 166 11.0 3.54 60 -21.9 .080 58 .46 -37
2.5 .41 156 9.3 2.91 53 -20.4 .095 61 .44 -40
3.0 .44 145 7.9 2.47 43 -18.8 .115 61 .43 -48
3.5 .46 137 6.7 2.15 33 -17.5 .133 58 .43 -58
4.0 .46 127 5.6 1.91 23 -16.0 .153 53 .45 -68
4.5 .47 116 4.7 1.72 13 -15.0 .178 50 .46 -75
5.0 .49 104 4.0 1.58 3 -13.9 .201 47 .48 -82
5.5 .52 91 3.3 1.45 -7 -13.0 .224 40 .47 -89
6.0 .59 81 2.5 1.34 -17 -12.1 .247 36 .43 -101
AT-41435 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA=25°C, VCE =8 V, I
C= 25 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .63 -50 31.8 39.08 146 -40.0 .010 83 .84 -18
0.5 .39 -137 22.9 13.97 99 -31.4 .027 60 .50 -26
1.0 .36 -171 17.2 7.28 80 -27.1 .044 67 .45 -26
1.5 .36 171 13.9 4.94 68 -23.5 .067 66 .43 -30
2.0 .38 156 11.5 3.76 58 -21.6 .083 63 .41 -34
2.5 .40 149 9.8 3.08 52 -19.6 .105 63 .39 -38
3.0 .43 140 8.3 2.61 43 -18.3 .122 64 .38 -47
3.5 .45 132 7.2 2.28 33 -16.8 .144 59 .39 -57
4.0 .46 122 6.1 2.02 23 -15.6 .165 55 .40 -67
4.5 .46 112 5.2 1.82 14 -14.6 .185 50 .42 -75
5.0 .47 101 4.4 1.66 4 -13.7 .207 45 .43 -81
5.5 .51 89 3.7 1.54 -5 -12.6 .233 39 .42 -89
6.0 .58 79 3.0 1.41 -15 -11.8 .257 33 .37 -101
A model for this device is available in the DEVICE MODELS section.
AT-41435 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq. NFOΓopt
GHz dB Mag Ang RN/50
0.1 1.2 .12 3 0.17
0.5 1.2 .10 14 0.17
1.0 1.3 .05 28 0.17
2.0 1.7 .30 -154 0.16
4.0 3.0 .54 -118 0.35
5
35 micro-X Package Dimensions
13
4
2
EMITTER
DIA.
EMITTER
COLLECTOR
BASE
.085
2.15
016
.083
2.11
.020
.508
.100
2.54
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
mm
.022
.56
.057 ± .010
1.45 ± .25
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5965-8925E
October 31, 2001
5988-4733EN
