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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES * Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz * 4-pin super minimold Package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5185 50 pcs (Non reel) * 8 mm wide embossed taping 2SC5185-T1 3 kpcs/reel * Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5 V Collector to Emitter Voltage VCEO 3 V Emitter to Base Voltage VEBO 2 V IC 30 mA 90 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10516EJ01V0DS (1st edition) (Previous No. P12109EJ2V0DS00) Date Published August 2004 CP(K) Printed in Japan The mark shows major revised points. (c) NEC Compound Semiconductor Devices, Ltd. 1994 , 2004 2SC5185 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA - - 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA - - 100 nA VCE = 2 V, IC = 20 mA 70 - 140 - DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product (1) fT VCE = 2 V, IC = 20 mA, f = 2.0 GHz 10 13 - GHz Gain Bandwidth Product (2) fT VCE = 1 V, IC = 10 mA, f = 2.0 GHz 8.0 11 - GHz Insertion Power Gain (1) S21e VCE = 2 V, IC = 20 mA, f = 2.0 GHz 8.0 11 - dB Insertion Power Gain (2) S21e VCE = 1 V, IC = 10 mA, f = 2.0 GHz 7.5 9.0 - dB Noise Figure (1) NF VCE = 2 V, IC = 3 mA, f = 2.0 GHz - 1.3 2.0 dB Noise Figure (2) NF VCE = 1 V, IC = 3 mA, f = 2.0 GHz - 1.3 2.0 dB VCB = 2 V, IE = 0 mA, f = 1.0 MHz - 0.3 0.6 pF 2 2 Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank FB Marking T86 hFE Value 70 to 140 Data Sheet PU10516EJ01V0DS 2SC5185 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Free Air 200 100 90 mW 0 50 50 100 0.5 0.4 0.3 0.2 0 1.0 2.0 3.0 4.0 5.0 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 VCE = 2 V 30 20 10 0 0.5 20 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A IB = 20 A 15 10 5 0 1.0 1.0 2.0 3.0 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 16 Gain Bandwidth Product fT (GHz) 500 DC Current Gain hFE f = 1 MHz Ambient Temperature TA (C) 40 200 VCE = 2 V 100 VCE = 1 V 50 20 10 0.6 150 Collector Current IC (mA) Collector Current IC (mA) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE f = 2 GHz 14 VCE = 2 V 12 VCE = 1 V 10 8 6 4 2 1 2 5 10 20 50 100 Collector Current IC (mA) 1 2 5 10 20 30 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10516EJ01V0DS 3 2SC5185 NOISE FIGURE vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 4 f = 2 GHz 12 VCE = 2 V 10 VCE = 1 V 8 6 f = 2 GHz Noise Figure NF (dB) Insertion Power Gain |S21e|2 (dB) 14 3 VCE = 1 V 2 VCE = 2 V 1 0 4 1 2 5 10 20 30 100 1 2 5 10 20 100 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.ncsd.necel.com/ 4 Data Sheet PU10516EJ01V0DS 2SC5185 PACKAGE DIMENSIONS 4-PIN SUPER MINIMOLD (UNIT: mm) 2.10.2 0.65 1.30 0.65 4 0.15+0.1 -0.05 0.3 +0.1 -0.05 1 0.4 0 to 0.1 0.3 0.90.1 0.3+0.1 -0.05 3 2 0.65 +0.1 -0.05 0.60 1.25 T86 2.00.2 0.3+0.1 -0.05 1.250.1 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Data Sheet PU10516EJ01V0DS 5 2SC5185 * The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 6 Data Sheet PU10516EJ01V0DS 2SC5185 For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406