© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6 1Publication Order Number:
MBR2535CTL/D
MBR2535CTLG
Switch-mode
Power Rectifier
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
150°C Operating Junction Temperature
25 A Total (12.5 A Per Diode Leg)
This Device is Pb−Free and is RoHS Compliant*
Applications
Power Supply – Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds
ESD Rating: Human Body Model 3B
Machine Model C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
TO−220
CASE 221A
STYLE 6
3
4
1
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 35 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
MBR2535CTLG TO−220
(Pb−Free) 50 Units/Rail
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A = Assembly Location
Y = Year
WW = Work Week
B2535L= Device Code
G = Pb−Free Package
AKA = Polarity Designator
AYWW
B2535LG
AKA
MBR2535CTLG
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MAXIMUM RATINGS (Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35 V
Average Rectified Forward Current
(TC = 142°C per Diode)
(TC = 142°C per Device)
IF(AV) 12.5
25
A
Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC = 139°C) IFRM 25 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg 65 to +150 °C
Operating Junction Temperature (Note 1) TJ−65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Controlled Avalanche Energy Waval 20 mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Conditions Symbol Max Unit
Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 2.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 75.0
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typical Max Unit
Instantaneous Forward Voltage (Note 2)
(iF = 25 Amps, Tj = 25°C)
(iF = 12.5 Amps, Tj = 25°C)
(iF = 12.5 Amps, Tj = 125°C)
vF
0.51
0.41
0.33
0.55
0.47
0.41
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 125°C)
iR
0.8
300 5.0
500
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MBR2535CTLG
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3
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.70.60.50.40.30.20.10
0.1
1.0
10
100
1.10.60.50.40.30.20.10
0.1
1.0
10
100
Figure 3. Typical Reverse Current, Per Leg Figure 4. Current Derating, Case, Per Leg
VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C)
3530252015105.00
0.1
1.0
10
100
1,000
155150145140135130125120
0
2.0
4.0
10
16
18
20
22
Figure 5. Current Derating, Ambient, Per Leg Figure 6. Forward Power Dissipation
TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A)
1751501251007550250
0
2.0
4.0
6.0
8.0
10
18
20
24161412104.02.00
0
2.0
4.0
8.0
10
12
14
16
IF, INSTANTANEOUS FORWARD CURRENT (A)IR, REVERSE CURRENT (mA)
IF(AV), AVERAGE FORWARD CURRENT (A)
IF(AV), AVERAGE FORWARD CURRENT (A)
PF(AV), AVERAGE POWER DISSIPATION (W)
0.8
125°C
150°C
25°C
1.00.90.80.7
IF, INSTANTANEOUS FORWARD CURRENT (A)
6.0
8.0
12
14
12
14
16
6.0 8.0 222018 26
6.0
TJ = 150°C
dc
Square Wave
dc
Square Wave
125°C
150°C
25°C
TJ = 125°C
TJ = 100°C
TJ = 25°C
dc
Square Wave
RqJA = 16°C/W
RqJA = 75°C/W
No Heatsink Square Wave
dc
MBR2535CTLG
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4
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBR2535CTL/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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