Discrete POWER & Signal Technologies EME MI CANISL ES TOR oe PN2222A MMBT2222A PZT2222A SOT-23 B Mark: 1P SOT-223 MMPQ2222 NMT2222 c2 C1 B2 SOT-6 Bi SOIC-16 c Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro- cess 19. Absol ute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 40 Vv Vcso Collector- Base Voltage 75 Vv VeBo Emitter-Base Voltage 6.0 Vv Io Collector Current - Continuous 1.0 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 1997 Fairchild Semiconductor Corporation VeeeelZd / CO?CLINN / C2C?COdININ / VoCeCLGININ / VeoeeeNdNPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min | Max | Units OFF CHARACTERISTICS Visryceo Collector-Emitter Breakdown Voltage* | Ic = 10 mA, Ip =0 40 Vv Vier)cBo Collector- Base Breakdown Voltage Ic = 10 pA, le =0 75 Vv Visr)eB0 Emitter-Base Breakdown Voltage le= 10 pA, Ic = 0 6.0 Vv loex Collector Cutoff Current Vor = 60 V, Vesiorr) = 3.0 V 10 nA leso Collector Cutoff Current Vos = 60 V, le =0 0.01 HA Vog = 60 V, le =0, Ty = 150C 10 A leBo Emitter Cutoff Current Vep= 3.0 V, Io =0 10 nA lat Base Cutoff Current Voce = 60 V, Vemorr) = 3.0 V 20 nA ON CHARACTERISTICS Hee DC Current Gain lo = 0.1 MA, Voce = 10 V 35 lo= 1.0 mA, Voz = 10 V 50 lo = 10 mA, Voe=10V 75 lo = 10 mA, Vce = 10 V, Ta = -55C 35 lo = 150 mA, Voce = 10 vr 100 300 lo = 150 mA, Vce = 1.0 V* 50 lo = 500 mA, Voce = 10 V* 40 Voetsat) Collector-Emitter Saturation Voltage lo = 150 mA, Ip = 15 MA 0.3 Vv lo = 500 mA, Ip = 50 mA 1.0 Vv Vee(sat) Base-Emitter Saturation Voltage lo = 150 mA, Ip = 1.0mMA 0.6 1.2 Vv lo = 500 mA, Ip = 5.0 mA 2.0 Vv SMALL SIGNAL CHARACTERISTICS (except MMPQ2222 and NMT2222) f Current Gain - Bandwidth Product lo = 20 mA, Vee = 20 V, f = 100 MHz 300 MHz Cobo Output Capacitance Vop = 10 V, le = 0, f = 100 kHz 8.0 pF Cibo Input Capacitance Veg = 0.5 V, Io = 0, f = 100 kHz 25 pF tbCc Collector Base Time Constant lc = 20 mA, Ves = 20 V, f = 31.8 MHz 150 ps NF Noise Figure le = 100 WA, Vce = 10 V, 4.0 dB Rs = 1.0 kQ, f = 1.0 kHz Re(hie) Real Part of Common-Emitter lo = 20 mA, Vee = 20 V, f = 300 MHz 60 Q High Frequency Input Impedance SWITCHING CHARACTERISTICS (except MMPQ2222 and NMT2222) ta Delay Time Voc = 30 V, VBE(OFF) = 0.5 V, 10 ns t Rise Time Io = 150 mA, Ip; = 15 mA 25 ns ts Storage Time Veco = 30 V, Ic = 150 mA, 225 ns t Fall Time lpi = Ip2 = 15 MA 60 ns *Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0% Spice Model NPN (Is=14.34f Xtix3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 No=2 Isc=0 Ikr=0 Re=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fo=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vif=1.7 Xtfe3 Rb=10) VeeeelZd / CO?CLINN / C2C?COdININ / VoCeCLGININ / VeoeeeNdNPN General Purpose Amplifier (continued) Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units PN2222A *PZT2222A Pp Total Device Dissipation 625 1,000 mw Derate above 25C 5.0 8.0 mWw/C Resc Thermal Resistance, Junction to Case 83.3 C/W Rea Thermal Resistance, Junction to Ambient 200 125 C/W Symbol Characteristic Max Units *MMBT2222A | MMPQ2222 i) Total Device Dissipation 350 1,000 mW Derate above 25C 2.8 8.0 mw/c Roya Thermal Resistance, Junction to Ambient 357 oC/W Effective 4 Die 125 C/W Each Die 240 C/W * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 om? **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 300 200 100 40C eo? 0.3 1 3 10 30 100 300 Ic - COLLECTOR CURRENT (mA) hre - TYPICAL PULSED CURRENT GAIN Base-Emitter Saturation Voltage vs Collector Current B =10 2S 2 a oo + Veesar- BASE-EMITTER VOLTAGE (V) a 1 10 100 500 |, - COLLECTOR CURRENT (mA) Collector-Emitter Saturation Voltage vs Collector Current i B =10 w i) 10 100 500 I> - COLLECTOR CURRENT (mA) Voegar> COLLECTOR-EMITTER VOLTAGE (V) Base-Emitter ON Voltage vs Collector Current Vor =5V 9 oo - 40C 2 nS o ot 1 10 25 Ic - COLLECTOR CURRENT (mA) Vaeonr BASE-EMITTER ON VOLTAGE (V) a VeeeelZd / CO?CLINN / C2C?COdININ / VoCeCLGININ / VeoeeeNdNPN General Purpose Amplifier (continued) Typical Characteristics (continued) Collector-Cutoff Current vs Ambient Temperature lego COLLECTOR CURRENT (nA) 25 50 76 100 125 150 T, - AMBIENT TEMPERATURE ( C) Turn On and Turn Off Times vs Collector Current 400 le lat =!go=2 320 Veco =25V 240 = = 160 ao Qo ton 10 100 1000 Ig - COLLECTOR CURRENT (mA) Emitter Transition and Output Capacitance vs Reverse Bias Voltage np Qo f = 1 MHz o CAPACITANCE (pF) o 4 Cob 041 1 10 100 REVERSE BIAS VOLTAGE (V) Switching Times vs Collector Current 400 le lei = !go= so 320 Veg =25V 2 240 = = 160 a ao 0 10 100 1000 | - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 0.75 SOT-223 P, - POWER DISSIPATION (W) 3 a 0 25 50 75 100 125 TEMPERATURE (C) VeeeelZd / CO?CLINN / C2C?COdININ / VoCeCLGININ / VeoeeeNdNPN General Purpose Amplifier (continued) Test Circuits 16V - 200ns +... FIGURE 1: Saturated Turn-On Switching Time -15V 6.0V 30 V ! 200ns ie 4... FIGURE 2: Saturated Turn-Off Switching Time VeeeelZd / CO?CLINN / C2C?COdININ / VoCeCLGININ / VeoeeeNd