CAPACITIVE DRIVE
As noted in the Driving ADC section, capacitive loads should
be isolated from the amplifier output with small valued resis-
tors. This is particularly the case when the load has a resistive
component that is 500Ω or higher. A typical ADC has capac-
itive components of around 10 pF and the resistive compo-
nent could be 1000Ω or higher. If driving a transmission line,
such as 50Ω coaxial or 100Ω twisted pair, using matching re-
sistors will be sufficient to isolate any subsequent capaci-
tance. For other applications see the “Suggested Rout vs.
Cap Load” charts in the Typical Performance Characteristics
section.
POWER DISSIPATION
The LMH6551 is optimized for maximum speed and perfor-
mance in the small form factor of the standard SOIC package,
and is essentially a dual channel amplifier. To ensure maxi-
mum output drive and highest performance, thermal shut-
down is not provided. Therefore, it is of utmost importance to
make sure that the TJMAXof 150°C is never exceeded due to
the overall power dissipation.
Follow these steps to determine the Maximum power dissi-
pation for the LMH6551:
1. Calculate the quiescent (no-load) power: PAMP = ICC*
(VS), where VS = V+ - V−. (Be sure to include any current
through the feedback network if VOCM is not mid rail.)
2. Calculate the RMS power dissipated in each of the output
stages: PD (rms) = rms ((VS - V+OUT) * I+OUT) + rms ((VS
− V−OUT) * I−OUT) , where VOUT and IOUT are the voltage
and the current measured at the output pins of the
differential amplifier as if they were single ended
amplifiers and VS is the total supply voltage.
3. Calculate the total RMS power: PT = PAMP + PD.
The maximum power that the LMH6551 package can dissi-
pate at a given temperature can be derived with the following
equation:
PMAX = (150° – TAMB)/ θJA, where TAMB = Ambient temperature
(°C) and θJA = Thermal resistance, from junction to ambient,
for a given package (°C/W). For the SOIC package θJA is 150°
C/W.
NOTE: If VCM is not 0V then there will be quiescent current
flowing in the feedback network. This current should be in-
cluded in the thermal calculations and added into the quies-
cent power dissipation of the amplifier.
ESD PROTECTION
The LMH6551 is protected against electrostatic discharge
(ESD) on all pins. The LMH6551 will survive 2000V Human
Body model and 200V Machine model events. Under normal
operation the ESD diodes have no effect on circuit perfor-
mance. There are occasions, however, when the ESD diodes
will be evident. If the LMH6551 is driven by a large signal while
the device is powered down the ESD diodes will conduct . The
current that flows through the ESD diodes will either exit the
chip through the supply pins or will flow through the device,
hence it is possible to power up a chip with a large signal
applied to the input pins.
BOARD LAYOUT
The LMH6551 is a very high performance amplifier. In order
to get maximum benefit from the differential circuit architec-
ture board layout and component selection is very critical. The
circuit board should have low a inductance ground plane and
well bypassed broad supply lines. External components
should be leadless surface mount types. The feedback net-
work and output matching resistors should be composed of
short traces and precision resistors (0.1%). The output match-
ing resistors should be placed within 3-4 mm of the amplifier
as should the supply bypass capacitors. The LMH730154
evaluation board is an example of good layout techniques.
The LMH6551 is sensitive to parasitic capacitances on the
amplifier inputs and to a lesser extent on the outputs as well.
Ground and power plane metal should be removed from be-
neath the amplifier and from beneath RF and RG.
With any differential signal path symmetry is very important.
Even small amounts of asymmetry will contribute to distortion
and balance errors.
EVALUATION BOARD
National Semiconductor offers evaluation board(s) to aid in
device testing and characterization and as a guide for proper
layout. Generally, a good high frequency layout will keep
power supply and ground traces away from the inverting input
and output pins. Parasitic capacitances on these nodes to
ground will cause frequency response peaking and possible
circuit oscillations (see Application Note OA-15 for more in-
formation).
www.national.com 16
LMH6551