Product Specification PE42641 SP4T UltraCMOS(R) RF Switch 100 MHz - 3.0 GHz Product Description The PE42641 is a HaRPTM-enhanced SP4T RF Switch developed on the UltraCMOS(R) process technology. This switch contains 4 identical WEDGE/ CDMA compliant TX paths and can be used in various GSM and WCDMA mobile applications as well as other wireless applications up to 3000 MHz. It is also suitable for antenna band switching and switchable matching networks for cellular and non-cellular mobile applications. It integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface and requires no DC blocking capacitors. This RoHScompliant part is available in a standard 3 x 3 x 0.75mm QFN package. Peregrine's HaRPTM technology enhancements deliver high linearity and exceptional harmonics performance. It is an innovative feature of the UltraCMOS(R) process, providing performance superior to GaAs with the economy and integration of conventional CMOS. Features Symmetric, High-Power SP4T: All ports WEDGE/CDMA-Compliant Very Low Insertion Loss: 0.45 dB @ 1000 MHz, 0.6 dB @ 2000 MHz HaRP TM - enhanced Technology for Unparalleled Linearity Low harmonics of 2fo = -86 dBc and 3fo = -81 dBc at +35 dBm IMD3 of -110 dBm at WCDMA Band I IIP3 of +68 dBm Very high isolation: 35 dB @ 900 MHz, 29 dB @ 1900 MHz Exceptionally high ESD tolerance: Class 3 (4.0 kV HBM) on ANT pin Class 2 (2.0 kV HBM) on all pins Integrated decoder for 2-pin control Accepts 1.8V and 2.75V levels Low 4.5 ohm series ON resistance No blocking capacitors required Figure 1. Functional Diagram Figure 2. Package Type 16-lead 3x3 mm QFN ANT ESD RF1 RF3 ESD ESD ESD ESD RF2 RF4 CMOS Control/Driver and ESD V1 V2 Document No. 70-0216-07 www.psemi.com (c)2007-2012 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 8 PE42641 Product Specification Table 1. Electrical Specifications Temp = 25C, VDD = 2.75V (ZS = ZL = 50 ) Parameter Condition Min Operational Frequency 1 Insertion Loss (Symmetric Ports) Return Loss (Active Ports) 100 Max Units 3000 MHz ANT - RF (850 / 900 MHz) - 0.45 0.65 dB ANT - RF (1800 / 1900 MHz) - 0.5 0.7 dB ANT - RF (1900 / 2200 MHz) - 0.55 0.75 dB 850 / 900 MHz - 25 - dB 1800 / 1900 MHz - 19 - dB 1900 / 2100 MHz - 18 - dB 31 35 - dB RF - ANT (850 / 900 MHz) Isolation Typ RF - ANT (1800 / 1900 MHz) 25 29 - dB RF - ANT (1900 / 2200 MHz) 23.5 27.5 - dB 35 dBm output power, 850 / 900 MHz -86 -80 dBc 33 dBm output power, 1800 / 1900 MHz -87 -78 dBc 35 dBm output power, 850 / 900 MHz -81 -73.5 dBc 33 dBm output power, 1800 / 1900 MHz -80 -72.5 dBc IMD3 distortion at 2.14 GHz RF Measured at 2.14 GHz at Ant port, input +20 dBm CW signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz -110 Switching time (10-90%) (90-10%) RF 2nd Harmonic 3rd Harmonic 2 dBm 5 s Note: 1. The typical ON Resistance value at DC is 4.5 Table 2. Electrical Specifications, Worst Case Conditions: Temp = 85C, VDD = 2.65 V (ZS = ZL = 50 ) Parameter Insertion loss (2.65V, 85C) Return Loss (Active Ports) (2.65V, 85C) Isolation (2.65V, 85C) 2nd Harmonic (2.65V, 85C) Condition Min Typ Max Units ANT - RF (850 / 900 MHz) - 0.5 0.7 dB ANT - RF (1800 / 1900 MHz) - 0.55 0.75 dB ANT - RF (1900 / 2200 MHz) - 0.6 0.8 dB 850 / 900 MHz - 25 - dB 1800 / 1900 MHz - 19 - dB 1900 / 2100 MHz - 18 - dB RF - ANT (850 / 900 MHz) 30.5 34.5 - dB RF - ANT (1800 / 1900 MHz) 24.5 28.5 - dB RF - ANT (1900 / 2200 MHz) 23 27 - dB -84 -78 dBc 35 dBm output power, 850 / 900 MHz 33 dBm output power, 1800 / 1900 MHz -85 -76 dBc 35 dBm output power, 850 / 900 MHz -79 -71.5 dBc 33 dBm output power, 1800 / 1900 MHz -78 -70.5 dBc IMD3 distortion at 2.14 GHz (2.65V, 85C) RF Measured at 2.14 GHz at Ant port, input +20 dBm CW signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz -108 Switching time (10-90%) (90-10%) RF 3rd Harmonic (2.65V, 85C) (c)2007-2012 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 8 2 dBm 5 s Document No. 70-0216-07 UltraCMOS(R) RFIC Solutions PE42641 Product Specification Table 5. Absolute Maximum Ratings N/C RF2 GND RF1 14 13 VDD 4 RF4 GND GND VI 11 ANT TST 10 GND 9 GND Parameter/Conditions Min Max Units Power supply voltage -0.3 4.0 V Voltage on any DC input -0.3 VDD+ 0.3 V Storage temperature range -65 +150 C 4,5 PIN(50 ) RF input power (50 ) 824-915 MHz +38 4,5 RF input power (50 ) 1710-1910 MHz PIN (:1) Table 3. Pin Descriptions RF input power (VSWR = (:1) 824-915 MHz +35 RF input power (VSWR = (:1)4,5 1710-1910 MHz +33 dBm ESD Voltage, ANT pin 4000 V ESD Voltage, all pins 2000 V Pin No. Pin Name 1 GND Ground 2 VDD Supply 3 V2 Switch control input, CMOS logic level 4 V1 Switch control input, CMOS logic level 5 GND Ground 6 RF42 RF Port 4 7 GND Ground 8 RF32 RF Port 3 9 GND Ground 10 GND Ground 11 ANT2 RF Common - Antenna 12 GND Ground Path V2 V1 13 RF1 2 RF Port 1 ANT - RF1 0 0 14 GND Ground ANT - RF2 1 0 15 RF22 RF Port 2 ANT - RF3 0 1 N/C No Connect ANT - RF4 1 1 GND Ground for proper device operation 16 Paddle Note: Description VESD 6 Notes: Table 6. Truth Table Table 4. Operating Ranges Symbol Min Typ Max Units Temperature range TOP -40 +85 C VDD Supply Voltage VDD 2.65 2.75 2.85 V IDD Power Supply Current (VDD = 2.75V) IDD 50 A RF input power3 (VSWR 3:1) 824-915 MHz 3 RF input power (VSWR 3:1) 1710-1910 MHz 13 +35 PIN dBm +33 Control Voltage High VIH Control Voltage Low VIL Note: 4. Assumes RF input period of 4620 s and duty cycle of 50% 5. VDD within operating range specified in Table 4 6. ESD Voltage (HBM, MIL-STD-883 Method 3015.7) Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. 2. Blocking capacitors needed only when non-zero DC voltage present Parameter dBm +36 4,5 RF3 3 V1 5 V2 12 8 2 7 Exposed Ground Paddle GND VDD Symbol 1 6 GND 15 Pin 1 16 Figure 3. Pin Configuration (Top View) 1.4 V 0.4 Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS(R) device, observe the same precautions that you would use with other ESDsensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS(R) devices are immune to latch-up. Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE42641 in the 16-lead 3x3 QFN package is MSL1. V 3. Assumes RF input period of 4620 s and duty cycle of 50% Document No. 70-0216-07 www.psemi.com (c)2007-2012 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 8 PE42641 Product Specification Figure 4. Evaluation Board Layouts Evaluation Kit Peregrine Specification 101/0287 The SP4T switch EK Board was designed to ease customer evaluation of Peregrine's PE42641. The RF common port is connected through a 50 transmission line via the top SMA connector, J1. RF1, RF2, RF3 and RF4 are connected through 50 transmission lines via SMA connectors J3, J5, J2 and J4, respectively. A through 50 transmission is available via SMA connectors J6 and J7. This transmission line can be used to estimate the loss of the PCB over the environmental conditions being evaluated. The board is constructed of a four metal layer FR4 material with a total thickness of 62 mils. The middle layers provide ground for the transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 32 mils, trace gaps of 25 mils, and metal thickness of 2.1 mils. Figure 5. Evaluation Board Schematic Peregrine Specification 102/0339 9 RF1 RF3 GND GND 7 RF4 6 J4 SMASM RF4 1 2 V1 5 4 3 2 1 V2 GND VDD GND GND 16 RF2 U1 QFN50P3X3-16P 1 8 2 GND GND 10 11 ANT RF3 14 15 RF2 J2 SMASM 13 2 J5 SMASM 1 GND RF1 2 J3 SMASM 1 12 ANT 1 J1 SMASM 2 J8 HEADER 14 13 11 9 7 5 3 1 13 11 9 7 VDD 5 3 V2 1 V1 C4 DNI R2 1M R1 1M C3 DNI Unlabeled Test Line (c)2007-2012 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 8 C2 DNI C1 DNI J6 SMASM 1 J7 SMASM Through Line 1 2 14 12 10 8 6 4 2 2 14 12 10 8 6 4 2 Document No. 70-0216-07 UltraCMOS(R) RFIC Solutions PE42641 Product Specification Figure 6. Insertion Loss: ANT-RF @ 25C Figure 7. Insertion Loss: ANT-RF @ 2.75V Figure 8. Isolation: ANT-RF @ 25C Figure 9. Isolation: ANT-RF @ 2.75V Document No. 70-0216-07 www.psemi.com (c)2007-2012 Peregrine Semiconductor Corp. All rights reserved. Page 5 of 8 PE42641 Product Specification Figure 10. Return Loss at active port @ 25C (c)2007-2012 Peregrine Semiconductor Corp. All rights reserved. Page 6 of 8 Figure 11. Return Loss at active port @ 2.75V Document No. 70-0216-07 UltraCMOS(R) RFIC Solutions PE42641 Product Specification Figure 12. Package Drawing QFN 3x3 mm A MAX 0.800 NOM 0.750 MIN 0.700 Document No. 70-0216-07 www.psemi.com (c)2007-2012 Peregrine Semiconductor Corp. All rights reserved. Page 7 of 8 PE42641 Product Specification Figure 13. Tape and Reel Specifications 16-lead 3x3 mm QFN Tape Feed Direction Pin 1 Top of Device Device Orientation in Tape Table 7. Ordering Information Order Code EK42641-02 1 EK42641-03 1 PE42641MLIBB-Z PE42641MLBC-Z Notes: 1 2 Part Marking Description Package Shipping Method PE42641-EK PE42641-16QFN 3x3mm-EK Evaluation Kit 1 / Box PE42641-EK PE42641-16QFN 3x3mm-EK Evaluation Kit 1 / Box 42641 PE42641G-16QFN 3x3mm-3000C Green 16-lead 3x3mm QFN 3000 units / T&R 42641 PE42641G-16QFN 3x3mm-3000C Green 16-lead 3x3mm QFN 3000 units / T&R 1. Hana - AYT (Thailand) assembly house. Please contact factory for assembly house details. 2. Unisem assembly house. Please contact factory for assembly house details. Sales Contact and Information For sales and contact information please visit www.psemi.com. Advance Information: The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification: The datasheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification: The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer Notification Form). The information in this datasheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user's own risk. (c)2007-2012 Peregrine Semiconductor Corp. All rights reserved. Page 8 of 8 No patent rights or licenses to any circuits described in this datasheet are implied or granted to any third party. Peregrine's products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, UltraCMOS and UTSi are registered trademarks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp. Document No. 70-0216-07 UltraCMOS(R) RFIC Solutions