Page 1 of 8
©2007-2012 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0216-07 │www.psemi.com
The PE42641 is a HaRP™-enhanced SP4T RF Switch
developed on the UltraCMOS® process
technology. This switch contains 4 identical WEDGE/
CDMA compliant TX paths and can be used in various
GSM and WCDMA mobile applications as well as other
wireless applications up to 3000 MHz. It is also suitable
for antenna band switching and switchable matching
networks for cellular and non-cellular mobile
applications. It integrates on-board CMOS control logic
with a low voltage CMOS-compatible control interface
and requires no DC blocking capacitors. This RoHS-
compliant part is available in a standard 3 x 3 x
0.75mm QFN package.
Peregrine’s HaRP™ technology enhancements deliver
high linearity and exceptional harmonics performance.
It is an innovative feature of the UltraCMOS® process,
providing performance superior to GaAs with the
economy and integration of conventional CMOS.
Product Specification
SP4T UltraCMOS® RF Switch
100 MHz – 3.0 GHz
Product Description
Figure 1. Functional Diagram
PE42641
Features
Symmetric, High-Power SP4T: All
ports WEDGE/CDMA-Compliant
Very Low Insertion Loss: 0.45 dB @
1000 MHz, 0.6 dB @ 2000 MHz
HaRPTM - enhanced Technology for
Unparalleled Linearity
Low harmonics of 2fo = -86 dBc and
3fo = -81 dBc at +35 dBm
IMD3 of -110 dBm at WCDMA Band I
IIP3 of +68 dBm
Very high isolation: 35 dB @ 900 MHz,
29 dB @ 1900 MHz
Exceptionally high ESD tolerance:
Class 3 (4.0 kV HBM) on ANT pin
Class 2 (2.0 kV HBM) on all pins
Integrated decoder for 2-pin control
Accepts 1.8V and 2.75V levels
Low 4.5 ohm series ON resistance
No blocking capacitors required
Figure 2. Package Type
16-lead 3x3 mm QFN
RF1
CMOS
Control/Driver
and ESD
V1 V2
ESD
ESD ESD
RF3
ANT
RF2
ESD ESD
RF4
Product Specification
PE42641
Page 2 of 8
©2007-2012 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0216-07 │ UltraCMOS® RFIC Solutions
Table 1. Electrical Specifications Temp = 25°C, VDD = 2.75V (ZS = ZL = 50 Ω )
Parameter Condition Min Typ Max Units
Insertion Loss1 (Symmetric Ports)
ANT - RF (850 / 900 MHz) - 0.45 0.65 dB
ANT - RF (1800 / 1900 MHz) - 0.5 0.7 dB
ANT - RF (1900 / 2200 MHz) - 0.55 0.75 dB
Return Loss (Active Ports)
850 / 900 MHz - 25 - dB
1800 / 1900 MHz - 19 - dB
1900 / 2100 MHz - 18 - dB
Isolation
RF - ANT (850 / 900 MHz) 31 35 - dB
RF - ANT (1800 / 1900 MHz) 25 29 - dB
RF - ANT (1900 / 2200 MHz) 23.5 27.5 - dB
2nd Harmonic 35 dBm output power, 850 / 900 MHz -86 -80 dBc
33 dBm output power, 1800 / 1900 MHz -87 -78 dBc
3rd Harmonic 35 dBm output power, 850 / 900 MHz -81 -73.5 dBc
33 dBm output power, 1800 / 1900 MHz -80 -72.5 dBc
IMD3 distortion at 2.14 GHz RF Measured at 2.14 GHz at Ant port, input +20 dBm CW
signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz -110 dBm
Switching time (10-90%) (90-10%) RF 2 5 μs
Operational Frequency 100 3000 MHz
Table 2. Electrical Specifications, Worst Case Conditions: Temp = 85°C, VDD = 2.65 V (ZS = ZL = 50 Ω )
Parameter Condition Min Typ Max Units
Insertion loss (2.65V, 85C)
ANT - RF (850 / 900 MHz) - 0.5 0.7 dB
ANT - RF (1800 / 1900 MHz) - 0.55 0.75 dB
ANT - RF (1900 / 2200 MHz) - 0.6 0.8 dB
Return Loss (Active Ports)
(2.65V, 85C)
850 / 900 MHz - 25 - dB
1800 / 1900 MHz - 19 - dB
1900 / 2100 MHz - 18 - dB
Isolation (2.65V, 85C)
RF - ANT (850 / 900 MHz) 30.5 34.5 - dB
RF - ANT (1800 / 1900 MHz) 24.5 28.5 - dB
RF - ANT (1900 / 2200 MHz) 23 27 - dB
2nd Harmonic (2.65V, 85C) 35 dBm output power, 850 / 900 MHz -84 -78 dBc
33 dBm output power, 1800 / 1900 MHz -85 -76 dBc
3rd Harmonic (2.65V, 85C) 35 dBm output power, 850 / 900 MHz -79 -71.5 dBc
33 dBm output power, 1800 / 1900 MHz -78 -70.5 dBc
IMD3 distortion at 2.14 GHz
(2.65V, 85C)
RF Measured at 2.14 GHz at Ant port, input +20 dBm CW
signal at 1.95 GHz and -15 dBm CW signal at 1.76 GHz -108 dBm
Switching time (10-90%) (90-10%) RF 2 5 μs
Note: 1. The typical ON Resistance value at DC is 4.5 Ω
Product Specification
PE42641
Page 3 of 8
©2007-2012 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0216-07 │www.psemi.com
GND
V
DD
V2
V1
13
12
11
10
9
8
7
6
5
1
2
3
4
14
15
16
RF1
GND
RF2
N/C
GND
RF4
GND
RF3
GND
GND
ANT
GND
Exposed
Ground
Paddle
Pin 1
Table 6. Truth Table
Table 5. Absolute Maximum Ratings
Notes: 4. Assumes RF input period of 4620 μs and duty cycle of 50%
5. VDD within operating range specified in Table 4
6. ESD Voltage (HBM, MIL-STD-883 Method 3015.7)
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted to
the limits in the Operating Ranges table. Operation
between operating range maximum and absolute
maximum for extended periods may reduce reliability.
Symbol Parameter/Conditions Min Max Units
VDD Power supply voltage -0.3 4.0 V
VI Voltage on any DC input -0.3 VDD+ 0.3 V
TST Storage temperature range -65 +150 °C
PIN(50 Ω)
RF input power (50 Ω) 4,5
824-915 MHz
+38 dBm
RF input power (50 Ω) 4,5
1710-1910 MHz
+36
PIN (∞:1)
RF input power (VSWR = (∞:1)4,5
824-915 MHz +35
dBm
RF input power (VSWR = (∞:1)4,5
1710-1910 MHz +33
ESD Voltage, ANT pin 4000 V
ESD Voltage, all pins 2000 V
VESD 6
Path V2 V1
ANT – RF1 0 0
ANT – RF2 1 0
ANT – RF3 0 1
ANT – RF4 1 1
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS® device, observe the
same precautions that you would use with other ESD-
sensitive devices. Although this device contains circuitry
to protect it from damage due to ESD, precautions
should be taken to avoid exceeding the specified rating.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS®
devices are immune to latch-up.
Figure 3. Pin Configuration (Top View)
Table 3. Pin Descriptions
Pin No. Pin Name Description
1 GND Ground
2 VDD Supply
3 V2 Switch control input, CMOS logic level
4 V1 Switch control input, CMOS logic level
5 GND Ground
6 RF42 RF Port 4
7 GND Ground
8 RF32 RF Port 3
9 GND Ground
10 GND Ground
11 ANT2 RF Common – Antenna
12 GND Ground
13 RF12 RF Port 1
14 GND Ground
15 RF22 RF Port 2
16 N/C No Connect
Paddle GND Ground for proper device operation
Table 4. Operating Ranges
Note: 3. Assumes RF input period of 4620 μs and duty cycle of 50%
Parameter Symbol Min Typ Max Units
Temperature range TOP -40 +85 °C
VDD Supply Voltage VDD 2.65 2.75 2.85 V
IDD Power Supply Current
(VDD = 2.75V) IDD 13 50 µA
RF input power3 (VSWR ≤ 3:1)
824-915 MHz
PIN
+35
dBm
RF input power3 (VSWR ≤ 3:1)
1710-1910 MHz
+33
Control Voltage High VIH 1.4 V
Control Voltage Low VIL 0.4 V
Note: 2. Blocking capacitors needed only when non-zero DC voltage present
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the PE42641 in
the 16-lead 3x3 QFN package is MSL1.
Product Specification
PE42641
Page 4 of 8
©2007-2012 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0216-07 │ UltraCMOS® RFIC Solutions
Evaluation Kit
The SP4T switch EK Board was designed to
ease customer evaluation of Peregrine’s
PE42641. The RF common port is connected
through a 50 Ω transmission line via the top SMA
connector, J1. RF1, RF2, RF3 and RF4 are
connected through 50 Ω transmission lines via
SMA connectors J3, J5, J2 and J4, respectively.
A through 50 Ω transmission is available via SMA
connectors J6 and J7. This transmission line can
be used to estimate the loss of the PCB over the
environmental conditions being evaluated.
The board is constructed of a four metal layer
FR4 material with a total thickness of 62 mils.
The middle layers provide ground for the
transmission lines. The transmission lines were
designed using a coplanar waveguide with
ground plane model using a trace width of
32 mils, trace gaps of 25 mils, and metal
thickness of 2.1 mils.
Figure 4. Evaluation Board Layouts
Figure 5. Evaluation Board Schematic
Peregrine Specification 102/0339
Peregrine Specification 101/0287
RF2
RF1
V1
VDD
ANT
RF4
RF3
V2
Through Line
Unlabeled
Test Line
C3
DNI
C3
DNI
J8
HEADER 14
J8
HEADER 14
11
33
55
77
2
24
46
68
810
10 12
12 14
14 13 13
99
11 11
R1 1MR1 1M
J6
SMASM
J6
SMASM
1
2
J1
SMASM
J1
SMASM
1
2
J4
SMASM
J4
SMASM
1
2
J5
SMASM
J5
SMASM
1
2
C4
DNI
C4
DNI
C2
DNI
C2
DNI
J3
SMASM
J3
SMASM
1
2
J7
SMASM
J7
SMASM
1
2
J2
SMASM
J2
SMASM
1
2
U1
QFN50P3X3-16P
U1
QFN50P3X3-16P
RF1
13
GND
14
RF2
15
GND
16
GND
1
VDD
2
V2
3
V1
4
GND 5
GND 7
RF4 6
RF3 8
GND 9
GND 10
GND 12
ANT 11
R2 1MR2 1M
C1
DNI
C1
DNI
Product Specification
PE42641
Page 5 of 8
©2007-2012 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0216-07 │www.psemi.com
Figure 9. Isolation: ANT-RF @ 2.75V Figure 8. Isolation: ANT-RF @ 25°C
Figure 6. Insertion Loss: ANT-RF @ 25°C Figure 7. Insertion Loss: ANT-RF @ 2.75V
Product Specification
PE42641
Page 6 of 8
©2007-2012 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0216-07 │ UltraCMOS® RFIC Solutions
Figure 10. Return Loss at active port @ 25°C Figure 11. Return Loss at active port @ 2.75V
Product Specification
PE42641
Page 7 of 8
©2007-2012 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0216-07 │www.psemi.com
Figure 12. Package Drawing
QFN 3x3 mm
A
MAX 0.800
NOM 0.750
MIN 0.700
Product Specification
PE42641
Page 8 of 8
©2007-2012 Peregrine Semiconductor Corp. All rights reserved. Document No. 70-0216-07 │ UltraCMOS® RFIC Solutions
Device Orientation in Tape
Top of
Device
Pin 1
Tape Feed Direction
16-lead 3x3 mm QFN
Figure 13. Tape and Reel Specifications
Table 7. Ordering Information
Order Code Part Marking Description Package Shipping Method
EK42641-02 1 PE42641-EK PE42641-16QFN 3x3mm-EK Evaluation Kit 1 / Box
PE42641MLIBB-Z 1 42641 PE42641G-16QFN 3x3mm-3000C Green 16-lead 3x3mm QFN 3000 units / T&R
PE42641MLBC-Z 2 42641 PE42641G-16QFN 3x3mm-3000C Green 16-lead 3x3mm QFN 3000 units / T&R
EK42641-03 1 PE42641-EK PE42641-16QFN 3x3mm-EK Evaluation Kit 1 / Box
Notes: 1. Hana – AYT (Thailand) assembly house. Please contact factory for assembly house details.
2. Unisem assembly house. Please contact factory for assembly house details.
Advance Information:
The product is in a formative or design stage. The datasheet contains design target
specifications for product development. Specifications and features may change in any manner without notice.
Preliminary Specification:
The datasheet contains preliminary data. Additional data may be added at a later
date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best
possible product.
Product Specification:
The datasheet contains final data. In the event Peregrine decides to
change the specifications, Peregrine will notify customers of the intended changes by issuing a CNF (Customer
Notification Form).
The information in this datasheet is believed to be reliable. However, Peregrine assumes no liability for the use
of this information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this datasheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant,
or in other applications intended to support or sustain life, or in any application in which the failure of the
Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no
liability for damages, including consequential or incidental damages, arising out of the use of its products in
such applications.
The Peregrine name, logo, UltraCMOS and UTSi are registered trademarks and HaRP, MultiSwitch and DuNE
are trademarks of Peregrine Semiconductor Corp.
Sales Contact and Information
For sales and contact information please visit www.psemi.com.
