PD-97302D 2N7624U3 IRHLNJ797034 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) R7TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ797034 100 kRads(Si) 0.072 -22A* IRHLNJ793034 300 kRads(Si) 0.072 -22A* SMD-0.5 Description IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC's, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available. Features 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -4.5V, TC = 25C Units Continuous Drain Current -22* ID @ VGS = -4.5V, TC = 100C Continuous Drain Current -14.9 A Pulsed Drain Current -88 Maximum Power Dissipation 57 W Linear Derating Factor 0.45 W/C VGS Gate-to-Source Voltage 10 V EAS Single Pulse Avalanche Energy 79 mJ IAR Avalanche Current -22 A EAR Repetitive Avalanche Energy 5.7 mJ dv/dt Peak Diode Recovery dv/dt -12.3 V/ns IDM PD @TC = 25C TJ TSTG Operating Junction and -55 to + 150 C Storage Temperature Range Pckg. Mounting Surface Temp. Weight 300 (for 5s) 1.0 (Typical) g * Current is limited by package For Footnotes refer to the page 2. 1 2016-11-14 IRHLNJ797034, 2N7624U3 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -60 BVDSS/TJ Breakdown Voltage Temp. Coefficient --- -0.055 RDS(on) Static Drain-to-Source On-State Resistance --- --- V --- V/C --- --- 0.072 VGS = 0V, ID = -250A Gate Threshold Voltage -1.0 --- -2.0 V VGS(th)/TJ Gfs Gate Threshold Voltage Coefficient --- 3.5 --- mV/C Forward Transconductance 16 --- --- S --- --- -1.0 QG QGS QGD td(on) tr td(off) tf Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- -15 -100 100 36 10 18 32 250 100 102 Ls +LD Total Inductance --- 4.0 --- Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance --- --- --- --- 2261 583 91 --- --- --- --- 20 IGSS Zero Gate Voltage Drain Current Reference to 25C, ID = -1.0mA VGS = -4.5V, ID = -14.9A VGS(th) IDSS Test Conditions VDS = VGS, ID = -250A VDS = -10V, ID = -14.9A VDS = -48V, VGS = 0V A VDS = -48V,VGS = 0V,TJ =125C VGS = -10V VGS = 10V ID = -22A VDS = -30V VGS = -4.5V VDD = -30V ID = -22A RG = 7.5 VGS = -5.0V nA nC ns Measured from the center of drain nH pad to center of source pad pF VGS = 0V VDS = -25V = 1.0MHz = 1.0MHz,open drain Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- -22* ISM Pulsed Source Current (Body Diode) --- --- -88 VSD Diode Forward Voltage --- --- -5.0 V TJ = 25C,IS = -22A, VGS = 0V trr Reverse Recovery Time --- --- 110 ns TJ = 25C,IF = -22A, Qrr Reverse Recovery Charge --- --- 132 nC VDD -50V, di/dt = -100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A * Current is limited by package Thermal Resistance Parameter RJC Junction-to-Case Min. Typ. Max. Units --- --- 2.2 C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, L = 0.32mH, Peak IL = -22A, VGS = -10V ISD -22A, di/dt -350A/s, VDD -60V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 2 2016-11-14 IRHLNJ797034, 2N7624U3 Radiation Characteristics Pre-Irradiation IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Up to 300 kRads (Si)1 Parameter Min. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -60 --- V VGS = 0V, ID = -250A VGS(th) Gate Threshold Voltage -1.0 -2.0 V VDS = VGS, ID = -250A IGSS Gate-to-Source Leakage Forward --- -100 nA VGS = -10V IGSS Gate-to-Source Leakage Reverse --- 100 nA VGS = 10V IDSS Zero Gate Voltage Drain Current --- -1.0 A VDS = -48V, VGS = 0V --- 0.076 VGS = -4.5V, ID = -14.9A --- 0.072 VGS = -4.5V, ID = -14.9A --- -5.0 V VGS = 0V, ID = -22A RDS(on) RDS(on) Diode Forward Voltage VSD 1 Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-0.5) Part numbers IRHLNJ797034 and IRHLNJ793034 IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area VDS (V) Energy (MeV) Range (m) 38 5% 300 7.5% 38 7.5% -60 -60 -60 -60 -60 -40 62 5% 355 7.5% 33 7.5% -60 -60 -60 -60 --- --- 85 5% 380 7.5% 29 7.5% -60 -60 -60 --- --- --- Bias VDS (V) LET (MeV/(mg/cm2)) @VGS=0V @VGS=2V @VGS= 4V @VGS= 5V @VGS= 6V @VGS= 7V -70 -60 -50 -40 -30 -20 -10 0 LET=38 5% LET=62 5% LET=85 5% 0 1 2 3 4 5 6 7 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 2016-11-14 IRHLNJ797034, 2N7624U3 Pre-Irradiation 100 100 10 -2.3V 20s PULSE WIDTH Tj = 25C TOP -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) VGS TOP -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.3V BOTTOM -2.3V 10 20s PULSE WIDTH Tj = 150C 1 1 0.1 1 10 100 1000 0.1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 1000 Fig 2. Typical Output Characteristics T J = 150C T J = 25C 10 VDS = -25V 60s PULSE WIDTH 1 ID = -22A 1.5 1.0 0.5 VGS = -4.5V 0.0 2 2.5 3 3.5 4 4.5 5 -60 -40 -20 -VGS, Gate-to-Source Voltage (V) ID = -22A 120 100 T J = 150C 80 60 40 T J = 25C 20 0 2 4 6 8 10 -VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage 20 40 60 80 100 120 140 160 12 Fig 4. Normalized On-Resistance Vs. Temperature R DS(on), Drain-to -Source On Resistance ( m) 160 140 0 T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics RDS(on), Drain-to -Source On Resistance (m) 10 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -ID, Drain-to-Source Current (A) 1 -VDS , Drain-to-Source Voltage (V) 100 4 VGS -10V -5.0V -4.5V -4.0V -3.0V -2.7V -2.5V -2.3V 140 130 120 110 T J = 150C 100 90 80 70 T J = 25C 60 50 Vgs = -4.5V 40 30 0 10 20 30 40 50 60 70 80 -ID, Drain Current (A) Fig 6. Typical On-Resistance Vs Drain Current 2016-11-14 IRHLNJ797034, 2N7624U3 -V (BR)DSS , Drain-to-Source Breakdown Voltage (V) Pre-Irradiation 2.5 75 -VGS(th) Gate threshold Voltage (V) ID = -1.0mA 70 65 60 55 -60 -40 -20 0 20 40 60 2.0 1.5 1.0 ID = -50A ID = -250A 0.5 ID = -1.0mA ID = -150mA 0.0 80 100 120 140 160 -60 -40 -20 T J , Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature 3600 Coss = Cds + Cgd 2400 Ciss 2000 1600 Coss 1200 800 400 ID = -22A 60 80 100 120 140 160 10 VDS = -48V VDS = -30V VDS = -12V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 17 Crss 0 0 1 10 100 0 -VDS , Drain-to-Source Voltage (V) 10 20 30 40 50 60 70 80 QG, Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 25 100 LIMITED BY PACKAGE 20 T J = 150C 10 -I D, Drain Current (A) -ISD , Reverse Drain Current (A) 40 Fig 8. Typical Threshold Voltage Vs Temperature -V GS, Gate-to-Source Voltage (V) C, Capacitance (pF) 2800 20 12 VGS = 0V, f = 1 MHz Ciss = C gs + Cgd, C ds SHORTED Crss = C gd 3200 0 T J , Temperature ( C ) T J = 25C 1 15 10 5 VGS = 0V 0 0.1 0 1 2 3 4 5 6 -VSD , Source-to-Drain Voltage (V) Fig 11. Typical Source-to-Drain Diode Forward Voltage 5 25 50 75 100 125 150 T C , Case Temperature (C) Fig 12. Maximum Drain Current Vs. Case Temperature 2016-11-14 IRHLNJ797034, 2N7624U3 Pre-Irradiation 140 EAS , Single Pulse Avalanche Energy (mJ) -I D, Drain-to-Source Current (A) 1000 OPERATION IN THIS AREA LIMITED BY RDS (on) 100 100s 10 1ms 1 0.1 10ms Tc = 25C Tj = 150C Single Pulse DC 1 10 120 TOP 100 BOTTOM ID -9.8A -13.9A -22A 80 60 40 20 0 25 100 50 75 100 125 150 Starting T J , Junction Temperature (C) -VDS , Drain-to-Source Voltage (V) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current Thermal Response ( Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 2016-11-14 IRHLNJ797034, 2N7624U3 Pre-Irradiation Fig 16a. Unclamped Inductive Test Circuit Fig 17a. Basic Gate Charge Waveform Fig 18a. Switching Time Test Circuit 7 Fig 16b. Unclamped Inductive Waveforms Fig 17b. Gate Charge Test Circuit Fig 18b. Switching Time Waveforms 2016-11-14 IRHLNJ797034, 2N7624U3 Pre-Irradiation Case Outline and Dimensions -- SMD-0.5 IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000 Data and specifications subject to change without notice. 8 2016-11-14 IRHLNJ797034, 2N7624U3 Pre-Irradiation IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. 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For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 9 2016-11-14