Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com
IRF820
Electrical Characteristics ( TC = 25°
°°
°C unless otherwise specified)
Symbol Parameter Conditions Min Typ Max Units
V(BR)DSS Drain-to-source Breakdown
Voltage VGS = 0V, ID = 250µA 500 V
V(BR)DSS /
∆
∆∆
∆TJ Breakdown Voltage
Temperature Coefficient Reference to 25°C,
ID = 250µA - 0.59 - V/°
°°
°C
ID(ON) On-State Drain Current
(note 2) VGS > ID(ON) x RDS(ON)Max 2.5
A
RDS(ON) Static Drain-to-Source
On-Resistance VGS =10V, ID = 1.5A
(note 4) 3.0
Ω
ΩΩ
Ω
VGS(TH) Gate Threshold Vo ltage VDS = VGS, ID = 250µA 2.0 - 4.0 V
gfs Forward Transconductance VDS = 50V, ID = 1.5A
1.5 - - S
VDS = 500V, VGS = 0V 25
IDSS Drain-to-Source Leakage
Current VDS = 400V, VGS = 0V,
TC= 125°C - -
250 µ
µµ
µA
Gate-to-Source Forward
Leakage VGS = 20V 100
IGSS Gate-to-Source Reverse
Leakage VG = -20V - -
-100
nA
Qg Total Gate Charge - - 24
Qqs Gate-to-Source Charge - - 3.3 nC
Qgd Gate-to-Drain (“Miller”)
Charge
ID = 2.1A
VDS = 400V
VGS = 10V
(note 4) 13
nC
td ( on) Turn-O n Delay Time - 8.0 -
Tr Rise Time - 8.6 -
td (off) Tur n -Off Dela y Time - 33 -
Tf Fall Time
VDD = 250V
ID = 2.1A
RG = 18Ω
RD = 100Ω (note 4) - 16 -
ns
LD Internal Drain Inductance - 4.5 -
LS Internal Source Inductance
Between lead 6mm (0.25in.)
from package and center or die
contact - 7.5 - nH
Ciss Input Capacitance - 360 -
Coss Output Capacitance - 92 -
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
F = 1.0MHZ - 37 - pF
Source-Drain Rating Characteristics
Symbol Parameter Conditions Min Typ Max Units
IS Continuous Sourc e Current
(Body Diode) - - 2.5
ISM Pulsed Source Current
(Body Diode) (Note 1)
MOSFET symbol showing the
integral reverse p-n junctio n
diode. - - 8.0
A
VSD Diode Forward Voltage (4) TJ=25°C, IS=2.5A,VGS=DV - - 1.6
V
trr Reverse Recovery Time - - 520 ns
Qrr Reverse Recovery Charge TJ=25°C, IF=2.1A
di/dt=100A/µs (Note 4) - 0.70 1.4
µ
µµ
µC
ton Forward Turn-On Ti me Intrinsic turn-on time is negligible (turn-on is dominated by (LS+LD)
Notes: 1. Repetitive Rating; puls e width limited by max. junction temperature.
2a. VDD = 50V, starting Tj = 25°C, L = 440µH RG = 25Ω, IAS = 28A
3. ISD ≤ 2.5A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, Tj ≤ 150°C
4. Pulse with ≤ 300µs; duty cycle ≤ 2%