GU-E PhotoMOS (AQW414EH)
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2
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6
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GU-E PhotoMOS
(AQW414EH)
General use and economy type.
DIP (2 Form B) 8-pin type.
Reinforced insulation 5,000V
type.
mm inch
3.2
.126
6.4
.252
9.86
.388
2.9
.114
6.4
.252
9.86
.388
FEATURES
1. Reinforced insulation 5,000 V type
More than 0.4 mm internal insulation
distance between inputs and outputs.
Con-forms to EN41003, EN60950
(reinforced insulation).
2. Compact 8-pin DIP size
The device comes in a compact
(W)6.4
×
(L)9.86
×
(H)3.2 mm
(W).252
×
(L).388
×
(H).126 inch, 8-pin DIP
size (through hole terminal type).
3. Applicable for 2 Form B use as well
as two independent 1 Form B use
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
5. High sensitivity, high speed
response.
Can control a maximum 0.13 A load
current with a 5 mA input current. Fast
operation speed of 0.8 ms (typical).
6. Low-level off state leakage current
TYPICAL APPLICATIONS
• Modem
• Telephone equipment
• Security equipment
• Sensors
TYPES
*Indicate the peak AC and DC values.
Note:
For space reasons, the SMD terminal shape indicator "A" and the package type indicator "X" and "Z" are omitted from the seal.
Type I/O isolation
voltage
Output rating*
Part No.
Packing quantity
Through hole
terminal Surface-mount terminal
Load
voltage
Load
current Tube packing style
Tape and reel packing style
Tube Tape and
reel
Picked from the
1/2/3/4-pin side
Picked from the
5/6/7/8-pin side
AC/DC
type
Reinforced
5,000 V 400 V 100 mA AQW414EH AQW414EHA AQW414EHAX AQW414EHAZ
1 tube contains
40 pcs.
1 batch contains
400 pcs.
1,000 pcs.
RATING
1. Absolute maximum ratings (Ambient temperature: 25
°
C 77
°
F)
Item Symbol AQW414EH (A) Remarks
Input
LED forward current I
F
50mA
LED reverse voltage V
R
5V
Peak forward current I
FP
1A f =100 Hz, Duty factor = 0.1%
Power dissipation P
in
75mW
Output
Load voltage (peak AC) V
L
400 V
Continuous load current I
L
0.1 A (0.13 A) Peak AC, DC
( ): in case of using only 1 channel.
Peak load current I
peak
0.3 A 100 ms (1 shot), V
L
= DC
Power dissipation P
out
800mW
Total power dissipation P
T
850mW
I/O isolation voltage V
iso
5,000 V AC
Temperature
limits
Operating T
opr
–40
°
C to +85
°
C –40
°
F to +185
°
FNon-condensing at low temperatures
Storage T
stg
–40
°
C to +100
°
C –40
°
F to +212
°
F
TESTING
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQW414EH)
2. Electrical characteristics (Ambient temperature: 25
°
C 77
°
F)
Note: Recommendable LED forward current I
F
= 5 to 10mA. For type of connection
*Operate/Reverse time
For Dimensions
For Schematic and Wiring Diagrams
For Cautions for Use
Item Symbol AQW414EH (A) Condition
Input
LED operate (OFF)
current
Typical I
Foff
1.3mA I
L
=Max.
Maximum 3.0mA
LED reverse (ON)
current
Minimum I
Fon
0.4mA I
L
=Max.
Typical 1.2mA
LED dropout voltage Typical V
F
1.25 (1.14 V at I
F
=5mA) I
F
=50mA
Maximum 1.5V
Output
On resistance Typical R
on
26
I
F
=0mA
I
L
=Max.
Within 1 s on time
Maximum 35
Off state leakage
current Maximum I
Leak
10
µ
AI
F
=5mA
V
L
=Max.
Transfer charac-
teristics
Turn on time* Typical T
off
0.8ms I
F
=0mA
5mA
I
L
=Max.
Maximum 3.0ms
Turn off time* Typical T
on
0.2ms I
F
=5mA
0mA
I
L
=Max.
Maximum 1.0ms
I/O capacitance Typical C
iso
0.8pF f =1MHz
V
B
=0V
Maximum 1.5pF
Initial I/O isolation
resistance Minimum R
iso
1,000M
500V DC
Toff
Input
Output 10%
90%
Ton
REFERENCE DATA
1. Load current vs. ambient temperature
characteristics
Allowable ambient temperature: 40
°
C to +85
°
C
40
°
F to +185
°
F
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
200
150
100
50
020406020
8085
10040
Ambient temperature, °C
Load current, mA
Using only 1 channel
Using 2 channels
0
10
20
30
40
40
50
020 20 40 60
8085
Ambient temperature, °C
On resistance,
0
1
0.5
1.5
2
2.5
40
3
020 20 40 60
8085
Ambient temperature, °C
Operate (OFF) time, ms
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQW414EH)
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
6. LED turn off current vs. ambient temperature
characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
0.2
0.4
0.6
40
0.8
020 20 40 60
8085
Ambient temperature, °C
Reverse (ON) time, ms
0
1
2
3
4
40
5
020 20 40 60
8085
Ambient temperature, °C
LED operate current, mA
0
1
2
3
4
40
5
020 20 40 60
8085
Ambient temperature, °C
LED turn off current, mA
7. LED dropout voltage vs. ambient
temperature characteristics;
LED current: 5 to 50 mA
8. Current vs. voltage characteristics of output
at MOS portion
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25
°
C 77
°
F
9. Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25
°
C 77
°
F
02040 20 40 60
8085
1.5
1.4
1.3
1.2
1.1
1.0
0
50mA
30mA
20mA
10mA
5mA
Ambient temperature, °C
LED dropout voltage, V
53
53
60
40
20
20
40
60
80
100
120
140
24
24
1
1
Voltage, V
Current, mA
140
120
100
80
060 100
20 40 80
10 3
10 6
10 9
10 12
Load voltage, V
Off state leakage current, A
10. Operate (OFF) time vs. LED forward
current characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
°
C 77
°
F
11. Reverse (ON) time vs. LED forward current
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
°
C 77
°
F
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Frequency: 1 MHz; Ambient temperature: 25
°
C 77
°
F
0
0.5
1.5
1
2
2.5
3.5
3
10 2003040
50 60
LED forward current, mA
Operate (OFF) time, ms
0
0.1
0.2
100203040
0.5
50 60
0.4
0.3
LED forward current, mA
Reverse (ON) time, ms
0
120
100
80
60
40
20
10 20 30 40 50 60
0
Applied voltage, V
Output capacitance, pF
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.