(R) FQAF11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.. * * * * * * 7.0A, 900V, RDS(on) = 1.1 @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! G! TO-3PF S Absolute Maximum Ratings Symbol VDSS ID ! FQAF Series G D S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQAF11N90C 900 Units V 7.0 A - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) 4.4 A 28.0 A VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 960 mJ IAR Avalanche Current (Note 1) 7.0 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 12 4.0 120 0.96 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient (c)2003 Fairchild Semiconductor Corporation Typ -- Max 1.04 Units C/W -- 40 C/W Rev. A, November 2003 http://store.iiic.cc/ FQAF11N90C QFET Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 900 -- -- V -- 1.0 -- V/C VDS = 900 V, VGS = 0 V -- -- 10 A VDS = 720 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 0.91 1.1 -- S pF Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A gFS Forward Transconductance VDS = 50 V, ID = 3.5 A (Note 4) -- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2530 3290 -- 215 280 pF -- 23 30 pF -- 60 130 ns -- 130 270 ns -- 130 270 ns -- 85 180 ns -- 60 80 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 450 V, ID = 11.0 A, RG = 25 (Note 4, 5) VDS = 720 V, ID = 11.0 A, VGS = 10 V (Note 4, 5) -- 13 -- nC -- 25 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.0 A ISM -- -- 28.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.0 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 1000 -- ns Qrr Reverse Recovery Charge -- 17.0 -- C VGS = 0 V, IS = 11.0 A, dIF / dt = 100 A/s (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 37mH, IAS = 7.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2003 Fairchild Semiconductor Corporation Rev. A, November 2003 http://store.iiic.cc/ FQAF11N90C Electrical Characteristics FQAF11N90C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 o 150 C ID, Drain Current [A] 1 10 0 10 o -55 C o 25 C 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 -1 10 Notes : 1. VDS = 50V 2. 250 s Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.5 1 IDR , Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 10 2.0 VGS = 10V VGS = 20V 1.5 1.0 Note : TJ = 25 0 10 25 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test -1 0.5 0 5 10 15 20 25 30 10 0.2 0.4 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 4500 Capacitance [pF] 1.2 1.4 VDS = 180V 2500 Coss 2000 Notes : 1. VGS = 0 V 2. f = 1 MHz 1500 Crss VGS , Gate-Source Voltage [V] Ciss 3000 1000 1.0 12 10 3500 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4000 0.6 VSD, Source-Drain voltage [V] VDS = 450V VDS = 720V 8 6 4 2 500 Note : ID = 11A 0 0 -1 10 0 10 0 1 10 10 20 30 40 50 60 70 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2003 Fairchild Semiconductor Corporation Figure 6. Gate Charge Characteristics Rev. A, November 2003 http://store.iiic.cc/ FQAF11N90C Typical Characteristics 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.5 150 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 8 2 10 Operation in This Area is Limited by R DS(on) 10 s 100 s 1 6 1 ms 10 ms ID, Drain Current [A] ID, Drain Current [A] 10 DC 0 10 Notes : -1 10 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 125 150 0 D = 0 .5 N o te s : 1 . Z J C ( t) = 1 .0 4 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 JC ( t) , T h e r m a l R e s p o n s e 100 Figure 10. Maximum Drain Current vs Case Temperature Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [] VDS, Drain-Source Voltage [V] t1 t2 Z s i n g le p u l s e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2003 Fairchild Semiconductor Corporation Rev. A, November 2003 http://store.iiic.cc/ FQAF11N90C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V ID (t) VDS (t) VDD tp tp (c)2003 Fairchild Semiconductor Corporation Time Rev. A, November 2003 http://store.iiic.cc/ FQAF11N90C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2003 Fairchild Semiconductor Corporation Rev. A, November 2003 http://store.iiic.cc/ FQAF11N90C Package Dimensions TO-3PF 4.50 0.20 5.50 0.20 15.50 0.20 2.00 0.20 2.00 0.20 2.00 0.20 22.00 0.20 1.50 0.20 16.50 0.20 2.50 0.20 0.85 0.03 23.00 0.20 10 10.00 0.20 (1.50) 2.00 0.20 14.50 0.20 16.50 0.20 2.00 0.20 4.00 0.20 3.30 0.20 +0.20 0.75 -0.10 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] +0.20 0.90 -0.10 5.50 0.20 26.50 0.20 14.80 0.20 3.00 0.20 o3.60 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, November 2003 http://store.iiic.cc/ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2003 Fairchild Semiconductor Corporation Rev. I5 http://store.iiic.cc/