INFRARED DIODES Ga/As-IR-Emitting Diodes in Miniature (T-3/4) Package
OPTICAL & ELECTRICAL CHRACTERISTICS (Tamb = 25°C)
PHOTO DETECTORS Silicon -NPN - Phototransistors
OPTICAL & ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
PARAMETER CONDITIONS SYMBOL VALUE
Viewing Angle CQY 36N
CQY 37N ϕ +55°
+12°
Peak Wavelength λp 950nm
Power Dissipation Pv 170mW
Thermal Resistance Junction/Ambient RthJA 450K/W
Forward Current IF 100mA
Rise Time IF=1.5A, tp/T=0.01, tp<10µs Tr 400ns
Fall Time IF=1.5A, tp/T=0.01, tp<10µs Tf 450ns
Junction Temperature Tj 100°C
Storage Temperature Range Tstg -25…+100°C
Radiant Intensity CQY 36N
CQY 37N
IF=50mA, tp<20ns Ie Min = 0.7mW/sr
Typ = 1.5mW/sr
Min = 2.2mW/sr
Typ = 5mW/sr
SSA-005/2
PARAMETER CONDITIONS SYMBOL VALUE
Viewing Angle BPW 16N
BPW 17N ϕ +40°
+12°
Peak Wavelength λp 825nm
Thermal Resistance Junction/Ambient RthJA 450K/W
Forward Current IF 100mA
Rise Time Vs=5V, Ic=5mA, RL=100Ω Tr 4.8µs
Fall Time Vs=5V, Ic=5mA, RL=100Ω Tf 5.0µs
Junction Temperature Tj 100°C
Storage Temperature Range Tstg -55…+100°C
Collector Light Current BPW 16N
BPW 17N
Ee=1mW/cm2, λ=950nm,
Vce=5V Ica Min = 0.07mA
Typ = 0.14mA
Min = 0.5mA
Typ = 1.0mA
Collector Emitter Voltage VCEO 32V
Collector Dark Current VCE = 20V, E = 0 ICEO Typ = 1nA
Max = 200nA
BEDFORD OPTO TECHNOLOGY LTD
LINDSAYLANDS, BIGGAR,LANARKSHIRE, ML12 6NR
Tel: +44 (0) 1899 221221 Fax: +44 (0) 1899 221009
Website: bot.co.uk E-mail: bill@bot.co.uk
ISS A 7.4.00