VSK.230..PbF Series Vishay High Power Products SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 230 A FEATURES * * * * * * * * * High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level DESCRIPTION MAGN-A-PAKTM This new VSK series of MAGN-A-PAKTM modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. PRODUCT SUMMARY IT(AV) 230 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) 85 C VALUES UNITS 230 510 IT(RMS) ITSM I2 t 50 Hz 7500 60 Hz 7850 50 Hz 280 60 Hz 260 I2t VDRM/VRRM TJ Range A kA2s 280 kA2s Up to 2000 V - 40 to 130 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 VSK.230- Document Number: 93053 Revision: 15-Sep-09 For technical questions, contact: indmodules@vishay.com IRRM/IDRM AT 130 C MAXIMUM mA 50 www.vishay.com 1 VSK.230..PbF Series Vishay High Power Products SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 230 A ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle on-state non-repetitive, surge current ITSM TEST CONDITIONS 180 conduction, half sine wave 510 No voltage reapplied t = 10 ms 100 % VRRM reapplied No voltage reapplied t = 8.3 ms t = 10 ms Maximum I2t for fusing 7850 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 8.3 ms I2t C 7500 t = 10 ms I2 t A 85 t = 10 ms t = 8.3 ms 6600 280 256 198 t = 0.1 ms to 10 ms, no voltage reapplied 2800 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.03 High level value of threshold voltage VT(TO)2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.07 Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.77 High level value on-state slope resistance rt2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.73 ITM = x IT(AV), TJ = TJ maximum, 180 conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.59 IH Anode supply = 12 V, initial IT = 30 A, TJ = 25 C 500 IL Anode supply = 12 V, resistive load = 1 , gate pulse: 10 V, 100 s, TJ = 25 C 1000 Maximum holding current Maximum latching current kA2s 181 VT(TO)1 VTM A 6300 Low level value or threshold voltage Maximum on-state voltage drop UNITS 230 As AC switch t = 8.3 ms Maximum I2t for fusing VALUES kA2s V m V mA SWITCHING PARAMETER SYMBOL Typical delay time td Typical rise time tr Typical turn-off time tq TEST CONDITIONS TJ = 25 C, gate current = 1 A dIg/dt = 1 A/s Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/s; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/s; gate 0 V, 100 VALUES UNITS 1.0 2.0 s 50 to 150 BLOCKING PARAMETER Maximum peak reverse and off-state leakage current SYMBOL IRRM, IDRM TEST CONDITIONS TJ = TJ maximum VALUES UNITS 50 mA RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 C, 1 s 3000 V Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/s www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 93053 Revision: 15-Sep-09 VSK.230..PbF Series SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 230 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES PGM tp 5 ms, TJ = TJ maximum 10.0 Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0 Maximum peak gate current + IGM tp 5 ms, TJ = TJ maximum 3.0 Maximum peak negative gate voltage - VGT tp 5 ms, TJ = TJ maximum 5.0 TJ = - 40 C 4.0 Maximum peak gate power Maximum required DC gate voltage to trigger VGT Anode supply = 12 V, resistive load; Ra = 1 TJ = 25 C TJ = TJ maximum UNITS W A V 3.0 2.0 350 TJ = - 40 C Anode supply = 12 V, resistive load; Ra = 1 TJ = 25 C mA 200 Maximum required DC gate current to trigger IGT TJ = TJ maximum 100 Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA dI/dt TJ = TJ maximum, ITM = 400 A, rated VDRM applied 500 A/s VALUES UNITS Maximum rate of rise of turned-on current THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction operating temperature range TEST CONDITIONS TJ - 40 to 130 Storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.125 Typical thermal resistance, case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.02 A mounting compound is recommended and the torque should be rechecked after a period of about 3 h to allow for the spread of the compound. 4 to 6 Nm 500 g 17.8 oz. C K/W MAP to heatsink Mounting torque 10 % busbar to MAP Approximate weight Case style MAGN-A-PAK R CONDUCTION PER JUNCTION DEVICES VSK.230- SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM 180 120 90 60 30 180 120 90 60 30 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 UNITS K/W Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93053 Revision: 15-Sep-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 VSK.230..PbF Series Vishay High Power Products SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 230 A Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: indmodules@vishay.com Document Number: 93053 Revision: 15-Sep-09 VSK.230..PbF Series SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 230 A Vishay High Power Products Fig. 7 - On-State Power Loss Characteristics Fig. 8 - On-State Power Loss Characteristics Fig. 9 - On-State Power Loss Characteristics Document Number: 93053 Revision: 15-Sep-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 VSK.230..PbF Series SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 230 A Typical Reverse Recovery Charge - Qrr (C) Vishay High Power Products 1800 VSK.230 .. Series TJ = 130 C Per Junction 1600 ITM = 800 A 1400 500 A 1200 300 A 200 A 1000 100 A 800 50 A 600 400 200 0 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/s) Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Reverse Recovery Charge Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms; tr < =1s b) Recommended load line for <=30% rated di/dt : 10V, 20ohms tr<=1 s 10 (1) (2) (3) (4) PGM PGM PGM PGM = = = = 10W, tp = 4ms 20W, tp = 2ms 40W, tp = 1ms 60W, tp = 0.66ms (a) (b) Tj=25 C 1 Tj=-40 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 VSK.230 Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Transient Thermal Impedance Z thJC (K/W) Fig. 12 - Gate Characteristics 1 Steady State Value: R thJC = 0.125 K/W (DC Operation) 0.1 VSK.230.. Series 0.01 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 13 - Thermal Impedance ZthJC Characteristics www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 93053 Revision: 15-Sep-09 VSK.230..PbF Series SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 230 A Vishay High Power Products ORDERING INFORMATION TABLE Device code VSK T 230 1 2 3 - 20 PbF 4 5 1 - Module type 2 - Circuit configuration (see dimensions - link at the end of datasheet) 3 - Current rating 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - None = Standard production PbF = Lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKH... VSKT... VSKK... VSKL... ~ ~ ~ ~ ~ ~ + + + + + + + + - - - K1G1 G2K2 - - - - - K1G1 G2K2 VSKV... - - + + + Available 800 V; contact factory for different requirements. + K1G1 G2K2 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93053 Revision: 15-Sep-09 www.vishay.com/doc?95086 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1