Document Number: 93053 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 15-Sep-09 1
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 230 A
VSK.230..PbF Series
Vishay High Power Products
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAKTM modules uses high
voltage power thyristor/thyristor and thyristor/diode in seven
basic configurations. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 230 A
MAGN-A-PAK
TM
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV) 85 °C 230
A
IT(RMS) 510
ITSM
50 Hz 7500
60 Hz 7850
I2t50 Hz 280 kA2s
60 Hz 260
I2√t280 kA2√s
VDRM/VRRM Up to 2000 V
TJRange - 40 to 130 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
VSK.230-
08 800 900
50
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93053
2Revision: 15-Sep-09
VSK.230..PbF Series
Vishay High Power Products SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 230 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
IT(AV) 180° conduction, half sine wave 230 A
85 °C
Maximum RMS on-state current IT(RMS) As AC switch 510
A
Maximum peak, one-cycle on-state
non-repetitive, surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
7500
t = 8.3 ms 7850
t = 10 ms 100 % VRRM
reapplied
6300
t = 8.3 ms 6600
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
280
kA2s
t = 8.3 ms 256
t = 10 ms 100 % VRRM
reapplied
198
t = 8.3 ms 181
Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 2800 kA2√s
Low level value or threshold voltage VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)),
TJ = TJ maximum 1.03 V
High level value of threshold voltage VT(TO)2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.07
Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)),
TJ = TJ maximum 0.77 mΩ
High level value on-state slope resistance rt2 (I > π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.73
Maximum on-state voltage drop VTM
ITM = π x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS))21.59 V
Maximum holding current IHAnode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500
mA
Maximum latching current IL
Anode supply = 12 V, resistive load = 1 Ω,
gate pulse: 10 V, 100 µs, TJ = 25 °C 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time tdTJ = 25 °C, gate current = 1 A dIg/dt = 1 A/µs
Vd = 0.67 % VDRM
1.0
µs
Typical rise time tr2.0
Typical turn-off time tq
ITM = 300 A; dI/dt = 15 A/µs; TJ = TJ maximum;
VR = 50 V; dV/dt = 20 V/µs; gate 0 V, 100 Ω50 to 150
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum 50 mA
RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V
Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/µs
Document Number: 93053 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 15-Sep-09 3
VSK.230..PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 230 A
Vishay High Power Products
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM tp ≤ 5 ms, TJ = TJ maximum 10.0 W
Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 2.0
Maximum peak gate current + IGM tp ≤ 5 ms, TJ = TJ maximum 3.0 A
Maximum peak negative gate voltage - VGT tp ≤ 5 ms, TJ = TJ maximum 5.0
V
Maximum required DC gate voltage to trigger VGT
TJ = - 40 °C
Anode supply = 12 V,
resistive load; Ra = 1 Ω
4.0
TJ = 25 °C 3.0
TJ = TJ maximum 2.0
Maximum required DC gate current to trigger IGT
TJ = - 40 °C
Anode supply = 12 V,
resistive load; Ra = 1 Ω
350
mATJ = 25 °C 200
TJ = TJ maximum 100
Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.25 V
Maximum gate current that willnot trigger IGD TJ = TJ maximum, rated VDRM applied 10.0 mA
Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A,
rated VDRM applied 500 A/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating temperature range TJ- 40 to 130 °C
Storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.125
K/W
Typical thermal resistance,
case to heatsink per module RthCS Mounting surface flat, smooth and greased 0.02
Mounting torque ± 10 %
MAP to heatsink A mounting compound is recommended
and the torque should be rechecked after a
period of about 3 h to allow for the spread of
the compound.
4 to 6 Nm
busbar to MAP
Approximate weight 500 g
17.8 oz.
Case style MAGN-A-PAK
ΔR CONDUCTION PER JUNCTION
DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93053
4Revision: 15-Sep-09
VSK.230..PbF Series
Vishay High Power Products SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 230 A
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93053 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 15-Sep-09 5
VSK.230..PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 230 A
Vishay High Power Products
Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93053
6Revision: 15-Sep-09
VSK.230..PbF Series
Vishay High Power Products SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 230 A
Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Reverse Recovery Charge Characteristics
Fig. 12 - Gate Characteristics
Fig. 13 - Thermal Impedance ZthJC Characteristics
200
400
600
800
1000
1200
1400
1600
1800
0 102030405060708090100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Typical Reverse Recovery Charge - Qrr (µC)
I
TM
= 800 A
500 A
300 A
200 A
100 A
VSK.230 .. Series
T
J
= 130 °C
Per Junction
50 A
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
rated di/dt : 20 V, 10 ohms; tr < =1µs
tr<=1 µs
Rectangular gate pulse
<=30% rated di/dt : 10V, 20ohms
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
VSK.230 Series Frequency Limited by PG(AV)
(1) (4)
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
thJC
Steady State Value:
R = 0.125 K/W
(DC Operation)
thJC
Transient Thermal Impedance Z (K/W)
VSK.230.. Series
Document Number: 93053 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 15-Sep-09 7
VSK.230..PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAKTM Power Modules), 230 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
1- Module type
2- Circuit configuration (see dimensions - link at the end of datasheet)
3- Current rating
4- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
Device code
51324
VSK T 230 - 20 PbF
-None = Standard production
PbF = Lead (Pb)-free
5
VSKT...
+
-
~~
+
-
K1G1 G2K2
VSKH...
+
-
~~
+
-
K1G1
VSKL...
+
-
~~
+
-
VSKV...
+
+
-
-
+
+
K1G1 G2K2
-
-
+
+
-
-
G2K
2
VSKK...
Available 800 V;
contact factory for different requirements.
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95086
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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