SEMiX252GB126HDs
© by SEMIKRON Rev. 1 – 23.03.2011 1
SEMiX® 2s
GB
Trench IGBT Modules
SEMiX252GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
•Not for new design
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 150 °C Tc=25°C 242 A
Tc=80°C 170 A
ICnom 150 A
ICRM ICRM = 2xICnom 300 A
VGES -20 ... 20 V
tpsc
VCC = 600 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj=125°C 10 µs
Tj-40 ... 150 °C
Inverse diode
IFTj= 150 °C Tc=25°C 228 A
Tc=80°C 158 A
IFnom 150 A
IFRM IFRM = 2xIFnom 300 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 1000 A
Tj-40 ... 150 °C
Module
It(RMS) Tterminal =80°C 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=150A
VGE =15V
chiplevel
Tj=25°C 1.7 2.1 V
Tj=125°C 2.0 2.45 V
VCE0 Tj=25°C 11.2V
Tj=125°C 0.9 1.1 V
rCE VGE =15V Tj=25°C 4.7 6.0 m
Tj=125°C 7.3 9.0 m
VGE(th) VGE=VCE, IC=6mA 5 5.8 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj=125°C mA
Cies VCE =25V
VGE =0V
f=1MHz 10.7 nF
Coes f=1MHz 0.56 nF
Cres f=1MHz 0.48 nF
QGVGE = - 8 V...+ 15 V 1200 nC
RGint Tj=25°C 5.00
td(on) VCC = 600 V
IC=150A
VGE =±15V
RG on =3
RG off =3
Tj=125°C 300 ns
trTj=125°C 45 ns
Eon Tj=125°C 20 mJ
td(off) Tj=125°C 570 ns
tfTj=125°C 110 ns
Eoff Tj=125°C 21 mJ
Rth(j-c) per IGBT 0.15 K/W