SEMiX252GB126HDs
© by SEMIKRON Rev. 1 23.03.2011 1
SEMiX® 2s
GB
Trench IGBT Modules
SEMiX252GB126HDs
Features
Homogeneous Si
Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
High short circuit capability
UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
Electronic Welding
Remarks
Case temperatur limited to TC=125°C
max.
•Not for new design
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 150 °C Tc=2C 242 A
Tc=8C 170 A
ICnom 150 A
ICRM ICRM = 2xICnom 300 A
VGES -20 ... 20 V
tpsc
VCC = 600 V
VGE 20 V
VCES 1200 V
Tj=12C 10 µs
Tj-40 ... 150 °C
Inverse diode
IFTj= 150 °C Tc=2C 228 A
Tc=8C 158 A
IFnom 150 A
IFRM IFRM = 2xIFnom 300 A
IFSM tp= 10 ms, sin 180°, Tj=2C 1000 A
Tj-40 ... 150 °C
Module
It(RMS) Tterminal =8C 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=150A
VGE =15V
chiplevel
Tj=2C 1.7 2.1 V
Tj=12C 2.0 2.45 V
VCE0 Tj=2C 11.2V
Tj=12C 0.9 1.1 V
rCE VGE =15V Tj=2C 4.7 6.0 m
Tj=12C 7.3 9.0 m
VGE(th) VGE=VCE, IC=6mA 5 5.8 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=2C 0.1 0.3 mA
Tj=12C mA
Cies VCE =25V
VGE =0V
f=1MHz 10.7 nF
Coes f=1MHz 0.56 nF
Cres f=1MHz 0.48 nF
QGVGE = - 8 V...+ 15 V 1200 nC
RGint Tj=2C 5.00
td(on) VCC = 600 V
IC=150A
VGE 15V
RG on =3
RG off =3
Tj=12C 300 ns
trTj=12C 45 ns
Eon Tj=12C 20 mJ
td(off) Tj=12C 570 ns
tfTj=12C 110 ns
Eoff Tj=12C 21 mJ
Rth(j-c) per IGBT 0.15 K/W
SEMiX252GB126HDs
2 Rev. 1 23.03.2011 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF= 150 A
VGE =0V
chip
Tj=2C 1.6 1.80 V
Tj=12C 1.6 1.8 V
VF0 Tj=2C 0.9 1 1.1 V
Tj=12C 0.7 0.8 0.9 V
rFTj=2C 3.3 4.0 4.7 m
Tj=12C 4.7 5.3 6.0 m
IRRM IF= 150 A
di/dtoff =4600A/µs
VGE =-15V
VCC = 600 V
Tj=12C 260 A
Qrr Tj=12C 43 µC
Err Tj=12C 18 mJ
Rth(j-c) per diode 0.24 K/W
Module
LCE 18 nH
RCC'+EE' res., terminal-chip TC=2C 0.7 m
TC=12C 1m
Rth(c-s) per module 0.045 K/W
Msto heat sink (M5) 3 5 Nm
Mtto terminals (M6) 2.5 5 Nm
Nm
w250 g
Temperatur Sensor
R100 Tc=100°C (R25=5 k) 493 ± 5%
B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550
±2% K
SEMiX® 2s
GB
Trench IGBT Modules
SEMiX252GB126HDs
Features
Homogeneous Si
Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
High short circuit capability
UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
Electronic Welding
Remarks
Case temperatur limited to TC=125°C
max.
•Not for new design
SEMiX252GB126HDs
© by SEMIKRON Rev. 1 23.03.2011 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
SEMiX252GB126HDs
4 Rev. 1 23.03.2011 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
SEMiX252GB126HDs
© by SEMIKRON Rev. 1 23.03.2011 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
SEMiX 2s
spring configuration