TLHK42T1U2, TLHK42S1T2
www.vishay.com Vishay Semiconductors
Rev. 1.3, 14-Oct-14 1Document Number: 83437
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Intensity LED in Ø 3 mm Tinted Non-Diffused Package
DESCRIPTION
This device has been designed to meet the increasing
demand for AlInGaP technology.
It is housed in a 3 mm clear plastic package. The small
viewing angle of these devices provides a high brightness.
All packing units are categorized in luminous intensity and
color groups. That allows users to assemble with uniform
appearance.
PRODUCT GROUP AND PACKAGE DATA
Product group: LED
•Package: 3 mm
Product series: standard
Angle of half intensity: ± 22°
FEATURES
AlInGaP technology
Standard Ø 3 mm (T-1) package
Small mechanical tolerances
Suitable for DC and high peak current
Small viewing angle
Very high intensity
Luminous intensity color categorized
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Status lights
•Off / on indicator
Background illumination
Readout lights
Maintenance lights
•Legend light
19222
PARTS TABLE
PART COLOR
LUMINOUS INTENSITY
(mcd) at IF
(mA)
WAVELENGTH
(nm) at IF
(mA)
FORWARD VOLTAGE
(V) at IF
(mA) TECHNOLOGY
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
TLHK42T1U2 Red 280 360 710 20 - 630 - 20 - 1.9 2.6 20 AlInGaP on GaAs
TLHK42S1T2 Red 180 - 450 20 - 630 - 20 - 1.9 2.6 20 AlInGaP on GaAs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLHK42T1U2, TLHK42S1T2
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
DC forward current Tamb 60 °C IF30 mA
Surge forward current tp 10 μs IFSM 0.1 A
Power dissipation Tamb 60 °C PV80 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +100 °C
Storage temperature range Tstg -55 to +100 °C
Soldering temperature t 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/ambient RthJA 400 K/W
TLHK42T1U2, TLHK42S1T2
www.vishay.com Vishay Semiconductors
Rev. 1.3, 14-Oct-14 2Document Number: 83437
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) In one packing unit IVmax./IVmin. 1.6
Note
Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %.The above type numbers represent the order
groups which include only a few brightness groups. Only one group will be shipped on each bag (there will be no mixing of two groups on
each bag).
In order to ensure availability, single brightness groups will not be orderable.
In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one bag.
In order to ensure availability, single wavelength groups will not be orderable.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Ambient Temperature for InGaN Fig. 2 - Relative Luminous Intensity vs. Angular Displacement
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TLHK42T1U2, TLHK42S1T2, RED
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity (1) IF = 20 mA TLHK42T1U2 IV
280 360 710 mcd
TLHK42S1T2 180 - 450
Dominant wavelength IF = 20 mA λd- 630 - nm
Peak wavelength IF = 20 mA λp- 643 - nm
Angle of half intensity IF = 20 mA ϕ 22- deg
Forward voltage IF = 20 mA VF-1.92.6V
Reverse voltage IR = 10 μA VR5--V
Junction capacitance VR = 0, f = 1 MHz Cj-15-pF
LUMINOUS INTENSITY CLASSIFICATION
GROUP LIGHT INTENSITY (mcd)
STANDARD OPTIONAL MIN. MAX.
S1 180 224
2 224 280
T1 280 355
2 355 450
U1 450 560
2 560 710
0
10
20
30
40
60
95 10894
50
I - Forward Current (mA)
F
T
amb
- Ambient Temperature (°C)
100806040200
0.4 0.2 0
95 10041
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I
V rel
- Relative Luminous Intensity
ϕ - Angular Displacement
TLHK42T1U2, TLHK42S1T2
www.vishay.com Vishay Semiconductors
Rev. 1.3, 14-Oct-14 3Document Number: 83437
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Luminous Intensity vs. Ambient Temperature
Fig. 5 - Relative Luminous Intensity vs. Forward Current
Fig. 6 - Relative Intensity vs. Wavelength
1
10
100
1.0 1.5 2.0 2.5 3.0
V
F
- Forward Voltage (V)
I
F
- Forward Current (mA)
0
0
0.4
0.8
1.2
1.6
96 12077
20 40 60 80 100
I - Relative Luminous Intensity
V rel
Tamb - Ambient Temperature (°C)
IF= 10 mA
0.01
0.1
1
10
1 10 100
IF - Forward Current (mA)
19113
IV rel - Relative Luminous Intensity
red
0.0
0.2
0.4
0.6
0.8
1.0
1.2
600 620 640 660 680 700
λ - Wavelength (nm)
96 12075
I
rel
- Relative Intensity
TLHK42T1U2, TLHK42S1T2
www.vishay.com Vishay Semiconductors
Rev. 1.3, 14-Oct-14 4Document Number: 83437
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
technical drawings
according to DIN
specications
Drawing-No.: 6.544-5255.01-4
Issue: 9; 28.07.14
Ø 3.2 ± 0.15
AC
Ø 2.9 ± 0.15
0.4
+ 0.15
- 0.05
AREA NOT PLANE
R1.4 (sphere)
< 0.6
3.4 ± 0.15
4.4 ± 0.3
5.8 ± 0.3
34.4 ± 0.5
1.5 ± 0.5
2.54 nom.
(2.5)
0.5
+ 0.2
- 0.1
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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