VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 * Ultra low loss thin IGBT die * Highly rugged SPT+ design * Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V, Tvj 25 C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 1200 V 100 A 200 A 20 V 10 s 150 C 5SMY 12K1201 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1200 Collector-emitter saturation voltage VCE sat IC = 100 A, VGE = 15 V Tvj = 125 C 2.0 V Tvj = 25 C Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C Qge Input capacitance Cies V V VCE = 1200 V, VGE = 0 V Gate charge 100 Tvj = 125 C IC = 4 mA, VCE = VGE, Tvj = 25 C IC = 100 A, VCE = 600 V, VGE = -15 ..15 V 400 -200 5 6.2 1050 Coes Reverse transfer capacitance Cres 0.34 Internal gate resistance RGint 2 Turn-on delay time td(on) Turn-off delay time tr td(off) Fall time Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC A A 200 nA 7 V nC 7.43 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Output capacitance Rise time Unit 1.8 ICES VGE(TO) max Tvj = 25 C Collector cut-off current Gate-emitter threshold voltage 2) VGE = 0 V, IC = 1 mA, Tvj = 25 C typ 0.52 VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 125 Tvj = 125 C 135 Tvj = 25 C 60 Tvj = 125 C 60 VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 420 Tvj = 125 C 490 Tvj = 25 C 60 Tvj = 125 C 75 Tvj = 25 C 8.6 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 60 nH, inductive load, FWD: 5SLX 12H1200 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 60 nH, inductive load nF ns ns ns ns mJ Tvj = 125 C 12.4 Tvj = 25 C 6.8 mJ Tvj = 125 C tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V 10.8 470 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1635-01 Sep 06 page 2 of 5 5SMY 12K1201 Mechanical properties Parameter Unit Dimensions Overall die L x W 11.9 x 11.2 mm exposed L x W (except gate pad) front metal 10.4 x 9.7 mm 1.2 x 1.22 mm 130 20 m 4 m 1.2 m gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 back (C) Al / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing 1.31 1.20 0.05 1.22 0.05 1.32 9.67 10.06 11.19 0.05 G Emitter 10.37 10.77 11.89 0.05 Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1635-01 Sep 06 page 3 of 5 5SMY 12K1201 200 300 VCE = 20 V 180 250 160 25 C 140 200 125 C IC [A] IC [A] 120 150 100 80 100 60 125 C 40 50 20 25 C VGE = 15 V 0 0 0 1 2 3 4 0 5 1 2 3 4 Fig. 1 Typical on-state characteristics Fig. 2 100 6 7 8 9 10 11 12 13 Typical transfer characteristics 45 VCC = 600 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 60 nH 90 80 70 VCC = 600 V IC = 100 A VGE = 15 V Tvj = 125 C L = 60 nH 40 35 Eon 30 60 50 Eon, Eoff [mJ] Eon, Eoff [mJ] 5 VGE [V] VCE [V] Eon 40 25 20 15 30 Eoff 10 20 Eoff 5 10 -3 2 -2 Esw [mJ] = 1.23 x 10 x I C + 2.33 x 10 x IC + 7.29 0 0 0 50 100 150 200 250 0 300 Typical switching characteristics vs collector current 20 30 40 50 60 70 RG [ohm] IC [A] Fig. 3 10 Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1635-01 Sep 06 page 4 of 5 5SMY 12K1201 20 10 Cies VCC = 600 V 15 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV C [nF] VGE [V] VCC = 800 V 10 Coes 1 Cres 5 IC = 100 A Tvj = 25 C 0 0.1 0.0 0.1 Fig. 5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Qg [C] Typical gate charge characteristics 0.9 1.0 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1635-01 Sep 06