2N1772A - Central Semiconductor Corp.

2N1772A

2N1774A

2N1776A

2N1777A

SILICON CONTROLLED RECTIFIER

8 AMP, 100 THRU 400 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N1772A Series

types are reverse blocking triode thyristors, designed

for use in low power switching and phase control

applications requiring blocking voltages up to 400 volts,

and RMS load currents up to 8 amps.

MARKING: FULL PART NUMBER

TO-64 CASE

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL 2N1772A 2N1774A 2N1776A 2N1777A UNITS

Peak Repetitive Off-State Voltage VDRM, VRRM 100 200 300 400 V

Peak Non-Repetitive Off-State Voltage VDRM, VRRM 150 300 400 500 V

Peak Forward Voltage VFM 480 V

Peak Gate Voltage VGFM, VGRM 10 V

RMS On-State Current IT(RMS) 8.0 A

Average On-State Current (TC=105°C) IO 4.7 A

Peak Forward Gate Current IGFM 2.0 A

Peak Forward Surge Current IFSM 60 A

I2t Value for Fusing, tp=8.3ms I2t 15 A2s

Peak Gate Power Dissipation PGM 5.0 W

Average Gate Power Dissipation PG(AV) 0.5 W

Operating and Storage Junction Temperature TJ, Tstg –40 to +150 °C

Thermal Resistance ΘJC 3.1 °C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

IDRM, IRRM VDRM, VRRM=100V 9.0 mA

IDRM, IRRM VDRM, VRRM=200V 6.0 mA

IDRM, IRRM VDRM, VRRM=300V 4.0 mA

IDRM, IRRM VDRM, VRRM=400V 2.0 mA

IGT VAK=12V, RL=250Ω 15 mA

VGT VAK=12V, RL=250Ω 2.0 V

VTM IT=15A 1.85 V

IH I

T=100mA 25 mA

R1 (16-March 2011)