Product
Summary
Sheet
TN2640
N-Channel Enhancement-Mode DMOS FET
Features: Benets:
Low threshold — 2.0V max. Can be operated directly from logic level input signals.
Eliminates the need for a level translator.
High input impedance Eliminates the need to supply DC current into the
gate.
Low input capacitance Improves overall efciency.
Fast switching speeds Maximizes switching speed to help improve overall
efciency.
Low on resistance Improves overall efciency
Free from secondary breakdown
compared to bipolar transistors
Maximizes efciency, minimizes power dissipation.
Improves overall reliability.
Low input and output leakage Improves measurement accuracy. Minimizes signal
attenuation.
Addition of D-Pak option Increases the power dissipation capability for surface
mount technology to 2.5W.
Product Overview:
TN2640K4 N-Channel Enhancement-Mode DMOS FET. The device features fast switching
speeds, low parasitic capacitances and a low gate threshold for ease of driving the FET.
It’s D-Pak package gives designers the exibility to use the device in a wide range of power
switching and amplifying applications. It has a high breakdown voltage (400V), a low on-
resistance (5.0W) and a low input capacitance (225pF) for fast switching applications. Adding
these features into the D-Pak package increases the power dissipation capability to 2.5W in
small footprints utilizing surface mount technology. It’s low input and output leakage feature
improves standby power dissipation while minimizing signal attenuation.
120711
3-Lead TO-252 (K4)
Applications:
►DC-DC converters
►Solid state relays
►Ultrasound pulsers
►Telecom switches
►Photo voltaic drivers
►Analog switches
8-Lead SOIC (LG)
3-Lead TO-92 (N3)
Switching Waveform and Test Circuit
90%
10%
90% 90%
10%
10%
Pulse
Generator
VDD
RL
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
RGEN
0V
0V
t
f