1N3007 |de,Sem _Ge-Di___Uni, $, 30V,0,05A, <500ns _ __3fa_i0? AAY 49, AAZ 15, AAZ 17, 1N276 1 N 3098 Sem,Ssi Z-Di 120V, 20%, 1W ~~ Bzw22/..., BZX61/..., ZPV.... 1NGQST..56re 1 N 3099 Z-Di =1N3098: 145V +N 3100 Z-Di =1N3098: 180V 1N3101 Z-Di =1N3098: 220 1N3098A...3101A 2D _=1N3098...3101: 10% 1N3102 Sen Z-0i 120V, 10%, (OW oo ~ BZX98/..., BZY98/..., ZX... 1N3008...15 1N 3103 2-0i =1N3102: 150V 1N 3104 Z-Di =1N3102: 180V 1.N 3105 Z-Di =1N3102: 220 1.N3102A....31054 Z-Di =1N3102...3105: 5% 1N 3106 SenSem S-Di Rr, B00V, 0,75A, Uf<t,6V(0,75A) BY 127, BY 133, BYX 94.95, 1N4006...074+ 1N3107 Si-Di =1N3106: 12004, 0,5A, Uf<3,2V(0,5A) BY 127, BY 133, BYX 94,..95, GP 100, ++ 13108 SenSem S-Di Rr, 800V, 1,54, Uf<4,6(1,5A) BY 227, BY 254...255, 15062, 1N5398, ++ 1N3109 _ i __=1N3108: 1200V, 0,7A, Uf<3,2V(0,7A) ____ BY 227, BY 255, BY 350/1300, GH 3E, ++ USA ____ 8, 42V, 0,054 4 - AY 27, AAZ 18, 1N3592 inrSsi_ SEDI P Rr, 50V, TSOA(TC=150"), Ufc1,2V(150A) Ba 00-300 AN4SB7..96 oo Sem 2D AV BM, Ye SC 34a DO-1 oe _BZW22/C7V5, B2X61/C7V5, ZP Gen GaAs-Di Tunnel-Di 34a DO-17 - Gen GaAs-Di Tunnel-Di 34a DO-17 - Gen GaAs-Di Tunnel-Di 34a DO-17 Gen #aAs-Di Tunnel-Di 34a DO-17 - Gen GaAs-Di Tunnel-Di 34a DO-17 - Gen GaAs-Di Tunnel-Di 34a DO-17 - Gen GaAs-Di Tunnel-Di 34a DO-17 - Gen GaAs-Di_ ss Tunnel-Di ee Ma 0-7 a a - USA GeDi Uni, $, 5OV, 0,11, <500ns Sta OO _ AAD IB, AZ _. USA ~ Ge-Di___, 20V,0,18A, <3500ns 3la_si0-7 - _-AA139, AAZ 18 _ __ USA Si-Di 8S, 40V, 0,054, UfctSV(10mA), <4ns Stas (CSC 3a BA 218, BAX 13, BAX91, 1N4148...49, 44 Si-Di =1N3123: Uf<tV(20mA) 3ta DO-7 1N4148 3ta BA 218, BAX 13, BAX91, 1N4148...49, ++ _ USA Ge-Di_ $58,300 3ta D0-7 RAY 28, 1NGB1, 1N633__ _ Kme,Rea -Ge-Di ~ Tunnel-Di - Kme,Rea Ge-Di Tunnel-Di _Kme,Rea_Ge-Di_ Tunned-DE te _. _ _ _ _ _Kme,Rea_ vaAs Di Tunnel _. _ _ ot _ _ oe EdlSem SEDI P Rr, SOV, 70A(Tc=150}, Uf<0,9V(70A) 32 =D0-5 - Si-Di =1N3139: 100V 32 =D05 Si-Di =1N3139: 150V 32 =D0-5 : SiDi =1N3139: 200V - 32. 05 - USA S-Di. UHR C/K-Band-Dem Koax ___00-23 | / - _ _ _ Ged S, 20V, 500ns- _ ; oe _ ee aw ish 49, AAZ15,AAZ 17, 1N276 _ Ged, OV oo AAT17...118, AA 132...134_ _ | eS) / 3a (0-7 ee __ Uni, 60V fia OT BA 107, BA T67...190, BAY 19.2.1 _ 8.5V(10MA), 5%, 0,008%/C, <150,0,4W 34a =D0-13 ee 1N4779, IN4784 Tunnel-Di - Tunnel-Di ; ; __. _. _ mo KV-Rr, 7,2KV, 0,1A, Uf<27V(0,1A) 3ta (55x9mm9} BYX 90, 1N5183 Wes Si-Di UHF, 36GHz : Wes S-Di UH. 36GHz ee Se 1N3154(A) USASie,Tho Ref-Di ~"g,4v(10mA), 5%, 0,01% C, <15Q, 0.4W, -55...4100 31a D0-7,00-35 BZX 51, 1N4775, 1N4780 A: -55,..4180 1.N3155(A) Ref-Di =1N3154: +0,005%/C Sta DO-7,00-35 B2X 52, 1N4776, 1N4781 1N3156(A) Ref-Di =1N3154: 20,002%/C Sta 00-7,D0-35 BZX 53, 1N4777, 1N4781 1NSI57(A) CRDi = NB 154: 40,00196/C ee _3ta__00-7,D0-35 ___ B2X54, 1N4778, 1N4783 +N 3159 USA Ge-Di S, 15V, 0,08A, <300ns _ Sta DO-7_ AAV 27...28, AAZ 18, 1N631, 1N633_ 1.N 3160 Sem Ge-Di Uni, BOY, 0,03A 3ta _D0-7 AAY 27...28, AAZ 18, 1N631, 1N633 1N3161 USA Si-Di P Rr, SOV, 175A(To=150), Uf<0,95V(175A) 73a DO-9 4N3735...44 1N3162 Si-Di =1N3161: 100V 73a D0-9 1N3735...44 13163 Si-Di =1N3164: 150V 7a Do-9 1N3736...44 1N 3164 Si-Di =1N3161: 200V 73a D0-9 1N3736...44 4N 3165 Si-Di =1N3161: 250V 73a DO-9 1N3737...44 1N 3166 Si-Di =1N3161: 300V 78a D0-9 1N3737...44 1N3167 Si-Di =1N3161: 350V 73a DO-9 1N3738...44 1 N 3168 Si-Di =1N3161: 400V 73a DO-9 1N3738...44 1N 3169 Si-Di =1N3161: 500V 78a D0-9 1N3739...44 1N 3170 Si-Di =1N3161: 600V 73a D0-9 1N3740...44 1N3171(A) Si-Di =1N3161: 700V, 240A, Uf<1,9V(A:<1,25V)(240A) 73a DO-9 1N3741...44 1N3172(A) Si-Di =1N3171: 800V 73a 00-9 1N3741...44 1.N3173(A) Si-Di =1N3171: 900V 73a D0-9 1N3742...44 1.N3174(A) Si-Di =1N3171: 1000V 73a DO-9 1N3742...44 1N3175(A) Si-Di =1N3171: 1200V 78a D0-9 1N3743....44 1.N3176(A) Si-Di =1N3171: 1200V 73a D0-9 1N3744 1.N3177(A) Si-Di =1N3171: 1600V 73a D0-9 - 1 N3161R....3177R Si-Di =1N3161...3177: _ 8b D0-9 1N3735R...3744R 1N3179 SemTrw -Si-Di Rr, Uni, 240V, Uf<1(0,1A) 3ta DO-14 BY 126...127, BY 133...134, 1N4004...07, ++ 1N3180 ss SemyTrwSiDE Re, Uni, 130, Ufet SVO5A) ata 00-14 - BY 126...127, BY 133...186, 1N4003...07, +4 IN3181 ZDi _ bidirectional, Z7V,10%, 06W 33 . : _ oe {N 3182 _ _ ___ VHF Tuning ee sia 00-7 . a ee _ 413183 Rr, 350V, 0,5A B350C500 1N 3184 =1N3183: 500V 85000500 1.N 3185 =1N3183: 700V 8700C500 1N 3186 =1N3183: 1000 B10000500 1N 3187 =1N3183: 1500V B1500C500 1N3188_ - SeBro =1N3183: 2000 ee . ee __ 820000500 ee 1N 3189 USA,Mot,Tho Rr, 200V, 1A, Uf<1V(0,75A) 34a D0-13 ~ BY 226...227, BY 251...255, 1N5393...99, ++ 1N 3190 =1N3189: 400V 3da DO-13 BY 226...227, BY 252...255, 1N5395...99, ++ 1N3191 - __=1N3189:600V 34a 0-13 _ ___ BY 226...227, BY 253...255, 1N5397...99, ++ iN3192 Wes Di 200V, Ui<1(0,1A) _ ee _ 1N 3193 ~~ USA,Rea,Tos S-Di Rr, 200V, 0,75A, Uf<1,2V(0,5A) 34a DO-12 BY 126...127, BY 133...134, 1N4003...07, ++ 1N3194 Si-Di =1N3193: 400V 34a DO-12 BY 126...127, BY 133...134, 1N4004...07, ++ 1.N 3195 Si-Di =1N3193: 600V 34a DO-12 BY 126...127, BY 133...134, 1N4005...07, ++ 1N 3196 Si-Di =1N3193: 800V 34a DO-12 BY 127, BY 133, BY 227, 1N4006...07, ++