HARRIS SEMICOND SECTOR e?E D MM 4302271 OO2051b & MBHAS Power Transistors RCA9166A, RCA9166B, MJ15022, MJ15024 ~ File Number 1293 TH33-15 Silicon N-P-N Epitaxial-Base TERMINAL DESIGNATIONS High-Power Transistors Rugged Devices, Broadly Applicable For industrial and Commercial Use Features: 8 High dissipation capability es Maximum safe-area-of-operation curves sees 27816 High voltage 8 High gain at high current Cc EN (FLANGE) JEDEC TO-204AA Applications: = High-fidality amplifiers = Series and shunt regulators @ Linear/power amplifiers The RCA9166A", RCA9166B*, MJ15022, and MJ15024 are ballasted multiple-epitaxial silicon n-p-n transistors fea- turing high gain at high current and high voltage. They differ from each other in voltage ratings, safe-operating- area (SOA) ratings, and the currents at which the parameters are controlled. All these types are supplied in the JEDEC TO-204AA steel hermetic package. Formerly RCA Dev Type Nos. TAQ166A and TA9166B, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: RCASI66A RCAQI66B MJ15024 MJ15022 A _ _ 400 350 v Vcen(sus) Ree = 1009.. 275 225 275 225 v Vceo(Sus) ........... 260 200 250 200 v Veso 5 Vv lew... 16 A lem. 30 A Te nee ne eee n ene ete eee teen eee tate teteeteteseaeeeanetas 5 A eee ence ene nena cede een eben eee ee sete etaes 250 Ww . Derate linearly _ 1.43 WPGC SR __ ~65 to 200 C At distance = 1/32 In. (0 8 mm) from seating plane for 10S max oo... cece cece ee ceccccecucucueees . 230 C 2-748HARRIS SEMICOND SECTOR e?vE D MM 4302271 0020517 T MBHAS Power Transistors RCA9166A, RCA9166B, MJ15022, MJ15024 ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc)=25C Unless Otherwise Specitied T- 3 3 =~ / Ty TEST CONDITIONS| LIMITS CUR- CHARAC- =| VOLTAGE] RENT /RCA9166A/RCA9166B] MJ15024 | MJ15022 UNITS TERISTIC V.de Adc Vcoe| VBE] Ic | Min.) Max. Min.|Max.]/Min.! Max. |Min.|Max. lepo 400a /|-|-jJ--/]-]1/-]- 3508 {-{/-]-];-] -]J-|1 ceo 200 /1;/-/--];fos;/7y 150 -/|-]/-/]1j)} |]Jos 400 |-1.5 -||]|}-Jos}[os|] ma ICEX 250 |-1.5 -{/-|};]}]-joe}] 200 |-1.5 {|{-!-}-|- | Joes ICER RpEe=100 A, | 200 -7;4-]-]-] 47-] Tc=150C 150 -|/-]-/|4]-]-]J-|4 4 3 |} 30} } 30/ JJ ~]J] 4 se | 20} {20/}/]|]-] nFE 4 se | { {| | ~ | 18] 60 | 15 | 60 4 tee (32) {32)-]5]|]54 Vceo(sus)> 0.1 | 250] | 200} |250/ jeo0] VceA(sus)? 0.1 |275} | 225} je7s} Jo2s| Rpe=100 2 VEBO lE=1 mA S|}] 65 y-};]--]-j-] Ip=0.5mA -|-[-{-]}]5s]/-]}s]|- Vee 4 se |} 2/]2ff--JT V 4 se || |] |]22]]22 Vce(sat) 1g=0.3 A se | ]}i0/J10/] - }] Ig=0.8 A se |}| ~|]}] Jf]14] f 14 Ip=3.2A joc J -| ~|~]J~]4]--][ 4 'S/p tp=0.5 s 80 3 - 3 - 2 {2 _ A nonrep. 50 -{-o-tlor-di- 5 | 5 _ ihfel f=1 MHz 10 1 4} 20] 4 | 20 |] 4 | 20 | 4 {| 20 fr 10 1 4} 20] 4 | 20 | 4 |] 20 | 4 [ 201] MHz Cob 10a | 500; | 500 | | 500 | | 500] pF Rec 10 170 |{o07] j07 |}J]o7] 107] ecw 8VcB. BCAUTION: Sustaining voltages VoeR(sus) and Vceg(sus) MUST NOT be measured on acurve tracer. Pulsed; pulse duration=300 ys, duty factor=1.8%. 2-749HARRIS SEMICOND SECTOR e7E D MM 4302271 0020516 1 MMHAS Power Transistors RCA9166A, RCA9166B, MJ15022, MJ15024 T-33-/9 g CASE TEMPERATURE(Te )= 25C {CURVES MUST BE DERATED LINEARLY WITH IN TEMPERA COLLECTOR CURRENT (I )~A Veg (MAX 1=200V (RCASIGEB, MJIS022 VcEo (MAX ) = 250 V(RCASIGGA,MJ15024) ' 2 4 6 819 2 4 6 8i99 2 4 6 81900 COLLECTOR- TO-EMITTER VOLTAGE (Vce)V 92CM~33704 Fig. 1 - Maximum operating areas for ail types. EMITTER VOLTAGE OF RATED CURRENT AT SPECIFIED oot | 10 92LS-1469R1 COLLECTOR CURRENT (Xcl-A 9268-33705 Fig. 2 - Current derating curve for all types. Fig. 3 - Typical dc beta characteristics as a function of collector current for all types. COLLECTOR-TO EMITTER VOLTAGE (Voge) *10V +10 CASE TEMPERATURE (Te) = 25C GAIN= BANDWIDTH PROOUCT {f7)- MHz 8 5 g &i E a 2 d ! i 10 COLLECTOR CURRENT (Ic)-A COLLECTOR CURRENT (Ig)-A 92Cs-33707 92CS-33709 Fig. 4 - Typical gain-bandwidth product tor aif Fig. 5 - Typical saturation voltage character- types. istics for ail types. 2-750HARRIS SEMICOND SECTOR 27E D MM 4302271 0020519 3 MMHAS To 33-15 Power Transistors RCA9166A, RCA9166B, MJ15022, MJ15024 i i COLLECTOR~TO-EMITTER VOLTAGE i tH Bee] Feito etl ebsites feebesters freee 4 PRSSE iE ESE ape Gra ed a $ recta} fiat ietet seer espana 2 3 Seer ae pliestreiestische ye Aah aebeapeedmnteed FPR bSt Sei pet sete gk eee oo ofiitentertst Gene Catal 3 3 Baie eleay. iebieiesinsie| w= es PE REY jee Bisbee 2 2 oasis peat aE eee B SEES Feiscteetdstectsced 4 esis, Caer aes ue imine 8 beret Piso cmtichascicteststest| Het pep isiedieet fispaedase Fe feabichenbrr psp s| L 2. 6 3 34 3.8 BASE-TO-EMITTER VOLTAGE (Vge)- BASE-TO-EMITTER VOLTAGE (Yge} -V 92CS- 33706 9208-33710 Fig. 6 - Typical input characteristics for aif Fig. 7 - Typical transfer characteristics. types. al CASE TEMPERATURE (Te) * 25C $s SSH E [5 = Tce Te Voer (sus) "5 5 OR is] Vee (sust Veex (sus) 3 x ad 5 if ! od 1g 8 ig 2% 3 ow BL i] 4 a5 8 0 Ve 9 Vor ' COLLECTOR-TO-EMITTER VOLTAGE (VcE)V PE NOTE. The sustaining Voltages Vcegtsusl, Veggtsos) ot, Voextses) ore tt scceplotle whea tke trace folls ts the mght and ebave goiat A. (For valves 48 : of current ad vallage, 449 Elgcincal Cherectansties. a3 of 928-15224RF 1 fo BASE - TO-COLLEGTOR VOLTAGE (Vgc]-V Of BASE-TO-EMITTER VOLTAGE (Vge}- g2cs-33708 Fig. 8 - Typical common-base input or output Fig. 9 - Oscilloscope display for measurement capacitance characteristics as a of sustaining voltages. (Test circuit function of reverse voltages for ail shown in Fig. 10). types. 270, 2W WA 6 SERIES- CONNECTED JW MILLER NO 2ael, Oscit LoscoPe INPUT IR IVALENT ~ OF EQUIVALE MODEL NO. 1308, OR EQUIVALENT CLARE MERCURY RELAY MODEL NO HGP-1048 OR EQUIVALENT - HORIZ. GND +O 0 TO SOV {500 mA) ST $_-O VERT. $ R (INVERT) 15a, . Veer (sus) Preentn L*2tmH FOR Vcgolsus) Vi ceotsus) AND Voer (sus) L* 7mH FOR Vcex (sus) 9208-33703 R000 Fig. 10 - Circuit used to measure sustaining voltages Vogeo(sus), VceR(sus), and Voex(sus) for all types. 2-751