Semiconductor Components Industries, LLC, 2001
March, 2000 – Rev. 2 1Publication Order Number:
DAN222/D
DAN222
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT–416/SC–90 package which is designed
for low power surface mount applications, where board space is at a
premium.
•Fast trr
•Low CD
•Available in 8 mm Tape and Reel
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage VR80 Vdc
Peak Reverse Voltage VRM 80 Vdc
Forward Current IF100 mAdc
Peak Forward Current IFM 300 mAdc
Peak Forward Surge Current IFSM(1) 2.0 Adc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD150 mW
Junction Temperature TJ150 °C
Storage Temperature Range Tstg –55 to +150 °C
1. t = 1 µS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current IRVR = 70 V — 0.1 µAdc
Forward Voltage VFIF = 100 mA — 1.2 Vdc
Reverse Breakdown Voltage VRIR = 100 µA 80 — Vdc
Diode Capacitance CDVR = 6.0 V, f = 1.0 MHz — 3.5 pF
Reverse Recovery Time trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR— 4.0 ns
2. trr Test Circuit on following page.
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Device Package Shipping
ORDERING INFORMATION
SOT–416
SC–90/SC–75
CASE 463
STYLE 3
MARKING
DIAGRAM
N9
DAN222 SOT–416 3000/Tape & Reel
CATHODE
3
12
ANODE
12
3
DAN222
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2
TYPICAL ELECTRICAL CHARACTERISTICS
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
IF, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (µA)
TA = 85°C
TA = -40°C
TA = 25°C
1.0
0
0.9
0.8
0.7
0.6 2468
VR, REVERSE VOLTAGE (VOLTS)
CD, DIODE CAPACITANCE (pF)
A
RL
trtp
t
10%
90%
VRtp = 2 µs
tr = 0.35 ns
IF
trr
t
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100 Ω
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the DAN222
DAN222
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3
PACKAGE DIMENSIONS
SOT–416/SC–90
CASE 463–01
ISSUE B
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.70 0.80 0.028 0.031
B1.40 1.80 0.055 0.071
C0.60 0.90 0.024 0.035
D0.15 0.30 0.006 0.012
G1.00 BSC 0.039 BSC
H--- 0.10 --- 0.004
J0.10 0.25 0.004 0.010
K1.45 1.75 0.057 0.069
L0.10 0.20 0.004 0.008
S0.50 BSC 0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) B
–A–
–B–
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
DAN222
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4
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DAN222/D
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