AOK60B65H2AL 650V, 60A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary * Latest AlphaIGBT (IGBT) Technology * 650V Breakdown voltage * Very fast and soft recovery freewheeling diode * High efficient turn-on di/dt controllability * Very high switching speed * Low Turn-Off switching loss and softness * Very good EMI behavior VCE IC (TC=100C) 650V 60A VCE(sat) (TJ=25C) 1.95V Applications * Welding Machines * UPS & Solar Inverters * Very High Switching Frequency Applications C TO-247 G G AOK60B65H2AL Orderable Part Number C E Package Type AOK60B65H2AL TO247 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Collector-Emitter Voltage VCE Gate-Emitter Voltage VGE E Form Minimum Order Quantity Tube 240 AOK60B65H2AL 650 Units V 30 V Continuous Collector TC=25C TC=100C Current Pulsed Collector Current, Limited by TJmax ICM 180 A Turn off SOA, VCE650V, Limited by TJmax ILM 180 A Continuous Diode Forward Current TC=25C TC=100C Diode Pulsed Current, Limited by TJmax TC=25C Power Dissipation TC=100C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Rev.1.0: December 2017 IC IF IFM PD TJ, TSTG TL Symbol RJA RJC RJC www.aosmd.com 120 60 60 30 90 416 166 A A A W -55 to 150 C 300 C Typical 40 0.3 Units C/W C/W 1.1 C/W Page 1 of 9 AOK60B65H2AL Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVCES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25C 650 - - V VCE(sat) VGE=15V, IC=60A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IF=30A Diode Forward Voltage VGE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA ICES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25C - 1.95 2.5 TJ=125C - 2.45 - TJ=150C - 2.58 - V TJ=25C - 1.88 2.4 TJ=125C - 1.97 - TJ=150C - 1.94 - - 4.6 - V V TJ=25C - - 10 TJ=125C - - 1000 TJ=150C - - 5000 A IGES Gate-Emitter leakage current VCE=0V, VGE=30V - - 100 nA gFS Forward Transconductance VCE=20V, IC=60A - 33 - S - 2100 - pF - 185 - pF DYNAMIC PARAMETERS Cies Input Capacitance VGE=0V, VCC=25V, f=1MHz Coes Output Capacitance Cres Reverse Transfer Capacitance - 65 - pF Qg Total Gate Charge - 84 - nC Qge Gate to Emitter Charge - 21 - nC Qgc Gate to Collector Charge - 38 - nC VGE=0V, VCC=0V, f=1MHz Gate resistance Rg SWITCHING PARAMETERS, (Load Inductive, TJ=25C) - 15 - ns VGE=15V, VCC=520V, IC=60A TD(on) Turn-On DelayTime - 35 - Tr Turn-On Rise Time - 80 - ns TD(off) Turn-Off Delay Time - 168 - ns Tf Turn-Off Fall Time - 76 - ns Eon Turn-On Energy - 2.36 - mJ Eoff Turn-Off Energy - 1.17 - mJ Etotal Trr Total Switching Energy - 3.54 - mJ Diode Reverse Recovery Time - 318 - Qrr Diode Reverse Recovery Charge - 0.8 - ns C Irm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150C) - 6.0 - A Td(on) Turn-On DelayTime - 33 - ns Tr Turn-On Rise Time Td(off) Turn-Off Delay Time Tf Turn-Off Fall Time Eon Turn-On Energy Eoff Etotal Trr Qrr Diode Reverse Recovery Charge Irm Diode Peak Reverse Recovery Current TJ=25C VGE=15V, VCC=400V, IC=60A, RG=5 TJ=25C IF=30A, dI/dt=200A/s, VCC=400V - 80 - ns - 195 - ns - 75 - ns - 2.53 - mJ Turn-Off Energy - 1.51 - mJ Total Switching Energy - 4.04 - mJ - 427 - - 1.6 - ns C - 7.5 - A TJ=150C VGE=15V, VCC=400V, IC=60A, RG=5 Diode Reverse Recovery Time TJ=150C IF=30A, dI/dt=200A/s, VCC=400V APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: December 2017 www.aosmd.com Page 2 of 9 AOK60B65H2AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 200 20V 20V 13V 17V 17V 160 160 15V 15V 11V 13V IC (A) IC (A) 120 80 120 11V 80 9V 9V 40 40 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=150C) VCE (V) Figure 1: Output Characteristic (Tj=25C) 100 60 VCE=20V 50 80 -40C 25C 60 150C IF (A) IC (A) 40 40 30 150C 20 25C 20 -40C 10 0 0 3 6 9 12 15 0 0.5 VGE (V) Figure 3: Transfer Characteristic 1 1.5 2 2.5 3 3.5 125 150 VF (V) Figure 4: Diode Characteristic 5 3 2.5 IC=120A 4 60A VF (V) VCE(sat) (V) 2 3 IC=60A 30A 1.5 5A 2 1 IC=30A 1 IF=1A 0.5 0 0 0 25 50 75 100 125 150 Temperature (C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: December 2017 www.aosmd.com 0 25 50 75 100 Temperature (C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 AOK60B65H2AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=60A Cies 12 Capacitance (pF) VGE (V) 1000 9 6 Coes 100 Cres 10 3 0 1 0 20 40 60 80 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 8 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 500 Power Disspation (W) 400 300 200 100 0 25 50 75 100 125 150 TCASE (C) Figure 10: Power Disspation as a Function of Case 150 1E-02 1E-03 1E-04 90 ICE(S) (A) Current rating IC (A) 120 60 VCE=650V 1E-05 1E-06 30 VCE=520V 1E-07 0 1E-08 25 50 75 100 125 150 Rev.1.0: December 2017 0 25 50 75 100 125 150 Temperature (C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE (C) Figure 11: Current De-rating www.aosmd.com Page 4 of 9 AOK60B65H2AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (ns) Switching Time (ns) 10000 100 10 1000 1 100 10 1 30 45 60 75 90 105 IC (A) Figure 13: Switching Time vs. IC (Tj=150C, VGE=15V, VCE=400V, Rg=5) 10000 120 0 1000 10 20 30 40 Rg () Figure 14: Switching Time vs. Rg (Tj=150C, VGE=15V, VCE=400V, IC=60A) 50 7 Td(off) Tf Td(on) Tr 6 5 VGE(TH) (V) Switching Time (ns) Td(off) Tf Td(on) Tr 100 4 3 10 2 1 1 25 50 75 100 125 150 TJ (C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=40A, Rg=5) Rev.1.0: December 2017 www.aosmd.com 0 25 50 75 100 125 150 TJ (C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 AOK60B65H2AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 7 Eoff Eoff 6 Eon Etotal 10 Switching Energy (mJ) SwitchIng Energy (mJ) 12 8 6 4 Eon Etotal 5 4 3 2 1 2 0 0 30 45 60 75 90 105 IC (A) Figure 17: Switching Loss vs. IC (Tj=150C, VGE=15V, VCE=400V, Rg=5) 0 120 10 30 40 50 Rg () Figure 18: Switching Loss vs. Rg (Tj=150C, VGE=15V, VCE=400V, IC=60A) 7 7 Eoff Eoff 6 6 Eon Etotal 5 Switching Energy (mJ) Switching Energy (mJ) 20 4 3 2 1 Eon Etotal 5 4 3 2 1 0 0 25 50 75 100 125 150 TJ (C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=60A, Rg=5) Rev.1.0: October 2016 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150C, VGE=15V, IC=60A, Rg=5) 500 Page 6 of 9 AOK60B65H2AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 24 480 18 360 Irm (A) Qr (nC) 1200 600 25C 800 Qrr 20 150C 12 Trr 12 240 6 120 16 S 150C 1600 30 Trr (ns) 2000 25C 150C 8 150C 400 25C 0 20 30 40 50 0 0 60 10 IF(A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/s) 20 30 40 50 60 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/s) 2500 50 500 30 2000 40 400 24 30 300 150C 25C 150C 18 S Qrr 1000 Trr (nS) Trr 1500 Irm (A) Qrr (nC) 4 S 0 10 25C Irm 25C 20 200 10 100 12 150C Irm 500 150C 6 25C 25C 0 0 200 300 400 500 600 700 800 di/dt (A/s) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=30A) Rev.1.0: December 2017 S 0 0 200 www.aosmd.com 300 400 500 600 700 800 di/dt (A/s) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=30A) Page 7 of 9 AOK60B65H2AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=0.3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 T 0.0001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.1C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 1E-06 T 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: December 2017 www.aosmd.com Page 8 of 9 AOK60B65H2AL Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: December 2017 www.aosmd.com Page 9 of 9