AOK60B65H2AL
650V, 60A AlphaIGBT
TM
With soft and fast recovery anti-parallel diode
General Description Product Summary
V
CE
I
C
(T
C
=100°C) 60A
V
CE(sat)
(T
J
=25°C) 1.95V
Applications
• Latest AlphaIGBT (αIGBT) Technology
• 650V Breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Very high switching speed
• Low Turn-Off switching loss and softness
• Very good EMI behavior
650V
• Welding Machines
• UPS & Solar Inverters
• Very High Switching Frequency Applications
G
C
E
TO-247
E
Symbol
V
CE
V
GE
I
CM
I
LM
Diode Pulsed Current, Limited by T
Jmax
I
FM
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θJC
R
θJC
°C/W1.1
300
-55 to 150
416
°C/W40
166
°C
90
Typical
W
Units
Maximum Diode Junction-to-Case
°C/W0.3Maximum IGBT Junction-to-Case
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AOK60B65H2AL
Collector-Emitter Voltage 650
Orderable Part Number
AOK60B65H2AL
Maximum Junction-to-Ambient
T
C
=100°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds °C
Power Dissipation P
D
Junction and Storage Temperature Range
T
C
=25°C
Thermal Characteristics
A
A
Parameter
180 A
180
I
C
Turn off SOA, V
CE
≤650V, Limited by T
Jmax
Pulsed Collector Current, Limited by T
Jmax
Gate-Emitter Voltage
T
C
=100°C
Continuous Diode
Forward Current
T
C
=25°C I
F
60 A
T
C
=100°C
Continuous Collector
Current
T
C
=25°C
30
120
60
±30 V
A
Minimum Order Quantity
240
Package Type
TO247
Form
Tube
E
GC
E
AOK60B65H2AL
Rev.1.0: December 2017 www.aosmd.com Page 1 of 9
AOK60B65H2AL
Symbol Min Typ Max Units
BV
CES
Collector-Emitter Breakdown Voltage 650 - - V
T
J
=25°C - 1.95 2.5
T
J
=125°C - 2.45 -
T
J
=150°C - 2.58 -
T
J
=25°C - 1.88 2.4
T
J
=125°C - 1.97 -
T
J
=150°C - 1.94 -
V
GE(th)
Gate-Emitter Threshold Voltage - 4.6 - V
T
J
=25°C - - 10
T
J
=125°C - - 1000
T
J
=150°C - - 5000
I
GES
Gate-Emitter leakage current - - ±100 nA
g
FS
- 33 - S
C
ies
- 2100 - pF
C
oes
- 185 - pF
C
res
- 65 - pF
Q
g
- 84 - nC
Q
ge
- 21 - nC
Q
gc
- 38 - nC
R
g
- 15 - Ω
T
D(on)
- 35 - ns
T
r
- 80 - ns
T
D(off)
- 168 - ns
T
f
- 76 - ns
E
on
- 2.36 - mJ
E
off
- 1.17 - mJ
E
total
- 3.54 - mJ
T
rr
- 318 - ns
Q
rr
- 0.8 - µC
I
rm
- 6.0 - A
T
d(on)
- 33 - ns
T
r
- 80 - ns
T
d(off)
- 195 - ns
T
f
- 75 - ns
E
on
- 2.53 - mJ
E
off
- 1.51 - mJ
E
total
- 4.04 - mJ
T
rr
- 427 - ns
Q
rr
- 1.6 - µC
I
rm
- 7.5 - A
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Collector-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
I
CES
Zero Gate Voltage Collector Current
V
F
Diode Forward Voltage
DYNAMIC PARAMETERS
µA
V
CE
=5V, I
C
=1mA
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Reverse Transfer Capacitance
V
GE
=0V, V
CC
=25V, f=1MHz
V
CE
=20V, I
C
=60A
V
CE
=0V, V
GE
=±30V
Forward Transconductance
V
CE(sat)
I
C
=1mA, V
GE
=0V, T
J
=25°C
V
GE
=15V, I
C
=60A V
V
CE
=650V, V
GE
=0V
V
GE
=0V, I
F
=30A V
Gate to Collector Charge
Gate to Emitter Charge V
GE
=15V, V
CC
=520V, I
C
=60A
SWITCHING PARAMETERS, (Load Inductive, T
J
=25°C)
Total Gate Charge
Gate resistance V
GE
=0V, V
CC
=0V, f=1MHz
Turn-Off Energy
Turn-On Rise Time
Turn-On DelayTime
SWITCHING PARAMETERS, (Load Inductive, T
J
=150°C)
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
T
J
=25°C
I
F
=30A, dI/dt=200A/µs, V
CC
=400V
Turn-Off Delay Time T
J
=25°C
V
GE
=15V, V
CC
=400V, I
C
=60A,
R
G
=5Ω
Total Switching Energy
Turn-Off Fall Time
Turn-On Energy
T
J
=150°C
I
F
=30A, dI/dt=200A/µs, V
CC
=400V
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
Turn-On DelayTime
T
J
=150°C
V
GE
=15V, V
CC
=400V, I
C
=60A,
R
G
=5Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Diode Reverse Recovery Time
Turn-Off Energy
Total Switching Energy
Rev.1.0: December 2017 www.aosmd.com Page 2 of 9
AOK60B65H2AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0 0.5 1 1.5 2 2.5 3 3.5
IF(A)
V
F
(V)
25°C
150°C
-40°C
0
40
80
120
160
200
01234567
IC(A)
VCE (V)
Figure 1: Output Characteristic
(Tj=25°C)
9V
20V
17V
15V 11V
VGE= 7V
13V
0
20
40
60
80
100
3 6 9 12 15
IC (A)
V
GE
(V)
150°C
25°C
-40°C
VCE=20V
0
40
80
120
160
200
0 1 2 3 4 5 6 7
IC(A)
VCE (V)
Figure 2: Output Characteristic
(Tj=150°C)
V
GE
=7V
9V
20V
17V
15V
11V
13V
V
F
(V)
Figure 4: Diode Characteristic
V
GE
(V)
Figure 3: Transfer Characteristic
0
1
2
3
4
5
0 25 50 75 100 125 150
VCE(sat)
(V)
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
IC=120A
IC=30A
IC=60A
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150
VF(V)
Temperature (°C)
Figure 6: Diode Forward voltage vs. Junction
Temperature
60A
5A
IF=1A
30A
Rev.1.0: December 2017
www.aosmd.com
Page 3 of 9
AOK60B65H2AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 20 40 60 80 100
VGE (V)
Qg (nC)
Figure 7: Gate-Charge Characteristics
VCE=520V
IC=60A
0
100
200
300
400
500
25 50 75 100 125 150
Power Disspation
(W)
T
(
°
C)
1
10
100
1000
10000
0 8 16 24 32 40
Capacitance (pF)
VCE (V)
Figure 8: Capacitance Characteristic
Cies
Cres
Coes
T
CASE
(
°
C)
Figure 10: Power Disspation as a Function of Case
0
30
60
90
120
150
25 50 75 100 125 150
Current rating IC
(A)
TCASE (°C)
Figure 11: Current De-rating
1E-08
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
0 25 50 75 100 125 150
ICE(S) (A)
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=650V
VCE=520V
Rev.1.0: December 2017
www.aosmd.com
Page 4 of 9
AOK60B65H2AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
10000
30 45 60 75 90 105 120
Switching Time (ns)
IC (A)
Figure 13: Switching Time vs. IC
(Tj=150°C, VGE=15V, VCE=400V, Rg=5Ω)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
0 10 20 30 40 50
Switching Time (ns)
Rg(Ω)
Figure 14: Switching Time vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=60A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
Switching Time (ns)
Td(off)
Tf
Td(on)
Tr
1
2
3
4
5
6
7
VGE(TH) (V)
25 50 75 100 125 150
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V, VCE=400V, IC=40A, Rg=5Ω)
0 25 50 75 100 125 150
TJ(°C)
Figure 16: VGE(TH) vs. Tj
Rev.1.0: December 2017
www.aosmd.com
Page 5 of 9
AOK60B65H2AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
12
14
30 45 60 75 90 105 120
SwitchIng Energy (mJ)
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=150°C, VGE=15V, VCE=400V, Rg=5Ω)
Eoff
Eon
Etotal
0
1
2
3
4
5
6
7
0 10 20 30 40 50
Switching Energy (mJ)
Rg(Ω)
Figure 18: Switching Loss vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=60A)
Eoff
Eon
Etotal
1
2
3
4
5
6
7
Switching Energy (mJ)
Eoff
Eon
Etotal
1
2
3
4
5
6
7
Switching Energy (mJ)
Eoff
Eon
Etotal
0
25 50 75 100 125 150
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V, VCE=400V, IC=60A, Rg=5Ω)
0
200 250 300 350 400 450 500
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=150°C, VGE=15V, IC=60A, Rg=5Ω)
Rev.1.0: October 2016
www.aosmd.com
Page 6 of 9
AOK60B65H2AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
4
8
12
16
20
0
120
240
360
480
600
10 20 30 40 50 60
S
Trr (ns)
IF(A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
150°C
25°C
150°C
25°C
Trr
S
0
6
12
18
24
30
0
400
800
1200
1600
2000
10 20 30 40 50 60
Irm (A)
Qr(nC)
IF(A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs)
25°C
150°C
150°C
25°C
Qrr
Irm
6
12
18
24
30
100
200
300
400
500
S
Trr (nS)
25
°
C
150°C
25°C
150°C
Trr
S
10
20
30
40
50
500
1000
1500
2000
2500
I
rm
(A)
Qrr (nC)
150°C
25°C
150°C
25°C
Qrr
Irm
0 0
200 300 400 500 600 700 800
di/dt (A/µs)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V, VCE=400V, IF=30A)
0 0
200 300 400 500 600 700 800
di/dt (A/µs)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V, VCE=400V, IF=30A)
Rev.1.0: December 2017
www.aosmd.com
Page 7 of 9
AOK60B65H2AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.0001
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PDM
0.0001
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PDM
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: December 2017
www.aosmd.com
Page 8 of 9
AOK60B65H2AL
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: December 2017
www.aosmd.com
Page 9 of 9