uClamp3311T Low Profile Clamp(R) 1-Line ESD protection PROTECTION PRODUCTS -MicroClamp(R) Description PRELIMINARY Features The Clamp series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The Clamp(R)3311T is constructed using Semtech's proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The Clamp3311T is in a 2-pin SLP1006P2T package. It measures 1.0 x 0.6 x 0.4mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one line operating at 3.3 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2. The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. (R) Transient protection for data lines to IEC 61000-4-2 (ESD) 30kV (air), 30kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE) Ultra-small package (1.0 x 0.6 x 0.4mm) Protects one data line Low reverse current: 10nA typical (VR=3.3V) Working voltage: 3.3V Low leakage current Solid-state silicon-avalanche technology Mechanical Characteristics SLP1006P2T package Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions: 1.0 x 0.6 x 0.4 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking : Marking code Packaging : Tape and Reel Applications Dimensions Cellular Handsets & Accessories Portable Instrumentation Keypads, Side Keys, LCD Displays Notebooks & Desktop Computers MP3 Players Schematic & Pin Configuration 1.0 2 0.60 0.65 1 0.40 Nominal Dimensions (mm) Revision 8/8/2012 SLP1006P2T (Bottom View) 1 www.semtech.com uClamp3311T PRELIMINARY PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20s) Pp k 40 Watts Maximum Peak Pulse Current (tp = 8/20s) Ip p 5 Amps VESD +/- 30 +/- 30 kV TJ -40 to +85 C TSTG -55 to +150 C ESD p er IEC 61000-4-2 (Air)1 ESD p er IEC 61000-4-2 (Contact)1 Op erating Temp erature Storage Temp erature Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum Typical VRWM Punch-Through Voltage V PT IPT = 2A 3.5 Snap-Back Voltage VSB ISB = 50mA 2.8 Reverse Leakage Current IR VRWM = 3.3V Clamping Voltage VC Clamping Voltage 3.9 Maximum Units 3.3 V 4.3 V V 0.01 0.05 A IPP = 1A, tp = 8/20s 6.5 V VC IPP = 5A, tp = 8/20s 8 V ESD Clamping Voltage2 VC IPP = 4A, tlp = 0.2/100ns 8.6 V ESD Clamping Voltage2 VC IPP = 16A, tlp = 0.2/100ns 5.6 V Dynamic Resistance2, 3 RDYN tlp = 0.2 / 100ns 0.25 Ohms Cj I/O pin to Gnd VR = 0V, f = 1MHz 5 Junction Capacitance 7 pF Notes 1)ESD gun return path connected to ESD ground plane. 2)Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to t2 = 90ns. 3) Dynamic resistance calculated from Ipp = 4A to Ipp = 16A (c) 2012 Semtech Corporation 2 www.semtech.com uClamp3311T PRELIMINARY PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current 10 1000 8 Clamping Voltage - VC (V) Peak Pulse Power - P PP (W) 9 100 10 7 6 5 4 3 Waveform Parameters: tr = 8s td = 20s 2 1 0 DR040412-40 1 0.1 1 10 Pulse Duration - tp (s) 0 100 1 2 4 5 6 Peak Pulse Current - IPP (A) Normalized Capacitance vs. Reverse Voltage TLP Characteristic 25 1.6 Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to t2 = 90ns f = 1 MHz 1.4 20 TLP Current (A) 1.2 Cj(VR) / Cj(VR=0V) 3 1 0.8 0.6 0.4 15 10 5 0.2 0 0 0 0.5 1 1.5 2 2.5 Reverse Voltage - VR (V) 3 0 3.5 4 6 8 10 12 14 16 TLP Voltage (V) ESD Clamping (+8kV Contact per IEC 61000-4-2) ESD Clamping (-8kV Contact per IEC 61000-4-2) 50 0 Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane 45 40 -5 -10 -15 Voltage (V) 35 Voltage (V) 2 30 25 20 -20 -25 -30 15 -35 10 -40 5 -45 0 Measured with 50 Ohm scope input impedance, 2GHz bandwidth. Corrected for 50 Ohm, 20dB attenuator. ESD gun return path connected to ESD ground plane -50 -10 0 10 20 30 40 50 60 70 80 -10 Time (ns) (c) 2012 Semtech Corporation 0 10 20 30 40 50 60 70 80 Time (ns) 3 www.semtech.com uClamp3311T PRELIMINARY PROTECTION PRODUCTS Typical Characteristics Typical Insertion Loss (S21) CH1 S21 LOG 6 dB / REF 0 dB 1: -2.3215 dB 800 MHz 2: -2.5192 dB 900 MHz 0 dB 12 -6 dB 3 3: -3.0194 dB 981.928 MHz 4 5 -12 dB 4: -5.6822 dB 1.8 GHz -18 dB 5: -12.905 dB 2.5 GHz -24 dB -30 dB -36 dB 1 MHz 10 MHz START . 030 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz Applications Information Device Connection Options Device Schematic & Pin Configuration The Clamp3311T is designed to protect one data line operating up to 3.3 volts. It will present a high impedance to the protected line up to 3.3 volts. It will "turn on" when the line voltage exceeds 3.5 volts. The device is bidirectional and may be used on lines where the signal polarity is above and below ground. These devices are not recommended for use on dc power supply lines due to their snap-back voltage characteristic. 2 1 Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: z Place the TVS near the input terminals or connectors to restrict transient coupling. z Minimize the path length between the TVS and the protected line. z Minimize all conductive loops including power and ground loops. z The ESD transient return path to ground should be kept as short as possible. z Never run critical signals near board edges. z Use ground planes whenever possible. (c) 2012 Semtech Corporation 4 www.semtech.com uClamp3311T PRELIMINARY PROTECTION PRODUCTS Applications Information Device Operation Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. Figure 1 compares the IV characteristic curves of a low voltage TVS with a working voltage (VRWM) of 3.3 volts to a conventional device with a working voltage of 5 volts. During normal operation, each device represents a high-impedance to the circuit up to its working voltage. During an ESD event, they will begin to conduct and will enter a low impedance state. For the 3.3 volt device, this happens when the punch-through voltage (VPT) is exceeded. Unlike a conventional 5 volt device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device. However, the device can latch up if a DC bias voltage is present. The reason being that in order for the device to turn off, the voltage must fall below the snap-back voltage (VSB). This value is normally a minimum of 2.8 volts. If the device is biased above the 2.8 volts, it will never fall below the snap-back voltage and will therefore stay in a conducting state. Semtech Low Voltage TVS Conventional TVS diodes are silicon avalanche, p-n junction devices designed to operate at voltages as low as 5 volts. However, many of today's semiconductor devices operate at voltages below 5 volts, and thus require lower voltage protection devices. Unfortunately, for operating voltages below 5 volts, conventional TVS diode technology becomes impractical. This is due to the adverse effects of high leakage current and high capacitance caused by the high impurity concentrations that are needed to lower the device voltage below 5 volts. Semtech's proprietary low voltage EPD device technology was developed to provide protection for today's circuits operating at voltages below 5 volts. Unlike conventional TVS diodes, the EPD device utilizes a complex four layer (n-p-p-n) structure. The construction of these devices results in very low operating voltage without the adverse effects mentioned above. 0.05 Low Voltage TVS 3/4 Snap-Back Voltage (VSB): Minimum rated voltage when the device is in a conducting state measured at ISB = 50mA. This voltage is less than the working voltage. The voltage must fall below VSB for the device to turn off. 3/4 Clamping Voltage (VC): Maximum voltage drop across the device at a defined peak pulse current (IPP). This is the voltage seen by the protected circuit during a transient event. 0.04 0.03 Semtech 3.3 Volt TVS 0.02 Current - I (A) 3/4 Punch-Through Voltage (VPT): Minimum rated voltage at which the device will become a low impedance (i.e. Minimum Turn-On Voltage). When VPT is exceeded, the device will conduct. Semtech 5 Volt TVS VSB 3/4 Working Voltage (VRWM): Maximum rated operating voltage at which the device will appear as a high impedance to the protected circuit. 0.01 VPT 0 0 1 2 3 VRWM -0.01 4 5 6 VRWM 7 8 9 10 VBR -0.02 -0.03 Voltage - V (V) Figure 1 - 3.3 volt vs. 5 volt TVS IV Curve (c) 2012 Semtech Corporation 5 www.semtech.com uClamp3311T PRELIMINARY PROTECTION PRODUCTS Applications Information - Spice Model uClamp3311T Spice Model uClamp3311T Spice Parameters (c) 2012 Semtech Corporation Parameter Unit D1 (T VS) D2 (T VS) IS Amp 1E-20 1E-20 BV Volt 2.8 2.8 VJ Volt 0.7 0.7 RS Ohm 0.2 0.2 IB V Amp 1E-3 1E-3 CJO Farad 10E-12 1E-12 TT sec 2.541E-9 2.541E-9 M -- 0.05 0.05 N -- 1.1 1.1 EG eV 1.11 1.11 6 www.semtech.com uClamp3311T PRELIMINARY PROTECTION PRODUCTS Outline OutlineDrawing Drawing- -SO-8 SLP1006P2T A B D DIMENSIONS INCHES MILLIMETERS DIM MIN NOMMAX MIN NOMMAX E TOP VIEW A SEATING PLANE aaa C C A1 A A1 b D E e L R N aaa bbb .015 .016 .017 .000 .001 .002 .018 .020 .022 .035 .039 .043 .020 .024 .028 .026 BSC .008 .010 .012 .002 .004 .006 2 .003 .004 0.37 0.40 0.43 0.00 0.03 0.05 0.45 0.50 0.55 0.90 1.00 1.10 0.50 0.60 0.70 0.65 BSC 0.20 0.25 0.30 0.05 0.10 0.15 2 0.08 0.10 PIN 1 ID R bxN bbb C A B 2x L e BOTTOM VIEW NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). Land Pattern - SLP1006P2T DIMENSIONS Y (C) DIM C G X Y Z Z G X INCHES (.033) .012 .024 .022 .055 MILLIMETERS (0.85) 0.30 0.60 0.55 1.40 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. (c) 2012 Semtech Corporation 7 www.semtech.com uClamp3311T PRELIMINARY PROTECTION PRODUCTS Marking Codes Ordering Information 31 Notes: 1) Device is electrically symmetrical 2) Marking will also include line matrix date code Part Number Qty per Reel Reel Size uClamp3311T.TCT 3,000 7 Inch uClamp3311T.TN T 10,000 7 Inch MicroClamp, uClamp and Clamp are trademarks of Semtech Corporation Carrier Tape Specification 31 31 31 3,000 piece, 4mm Pitch Reel Pin 1 Location (Towards Sprocket Holes) Device Orientation in Tape A0 0.69 +/-0.10 mm B0 K0 1.19 +/-0.10 mm 0.66 +/-0.10 mm Tape Width B, (Max) D D1 8 mm 4.2 mm (.165) 1.5 + 0.1 mm - 0.0 mm (0.59 +.005 - .000) 0.4 mm 0.25 (.031) (c) 2012 Semtech Corporation E 1.750.10 mm (.069.004) F P P0 P2 T W 3.50.05 mm (.138.002) 4.00.10 mm (.157.004) 4.00.1 mm (.157.004) 2.00.05 mm (.079.002) 0.2540.02 mm (.016) 8.0 mm + 0.3 mm - 0.1 mm (.312.012) 8 www.semtech.com uClamp3311T PRELIMINARY PROTECTION PRODUCTS 10,000 piece, 2mm Pitch Reel Bo Ao Ko 31 Note: All dimensions in mm unless otherwise specified 31 0.55 +/-0.05 mm 31 1.15 +/-0.05 mm K0 31 0.70 +/-0.05 mm B0 31 A0 Pin 1 Location (Towards Sprocket Holes) Device Orientation in Tape Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 (c) 2012 Semtech Corporation 9 www.semtech.com