UCLAMP3311T.TCT - SEMTECH - Datasheet.Live

PROTECTION PRODUCTS

1www.semtech.com

PRELIMINARY

PROTECTION PRODUCTS -MicroClamp®®

®®

uClamp3311T

Low Profile μClamp®

1-Line ESD protection

Description Features

Dimensions Schematic & Pin Configuration

Revision 8/8/2012

Applications

Mechanical Characteristics

SLP1006P2T (Bottom View)

Nominal Dimensions (mm)

0.65

0.40

0.60

1.0

The μClamp® series of Transient Voltage Suppressors

(TVS) are designed to replace multilayer varistors

(MLVs) in portable applications such as cell phones,

notebook computers, and PDAs. They offer superior

electrical characteristics such as lower clamping

voltage and no device degradation when compared to

MLVs. They are designed to protect sensitive semicon-

ductor components from damage or upset due to

electrostatic discharge (ESD), lightning, electrical fast

transients (EFT), and cable discharge events (CDE).

The μClamp®3311T is constructed using Semtech’s

proprietary EPD process technology. The EPD process

provides low standoff voltages with significant reduc-

tions in leakage currents and capacitance over silicon-

avalanche diode processes. They feature a true

operating voltage of 3.3 volts for superior protection

when compared to traditional pn junction devices.

The μClamp3311T is in a 2-pin SLP1006P2T package.

It measures 1.0 x 0.6 x 0.4mm. The leads are spaced

at a pitch of 0.65mm and are finished with lead-free

NiPdAu. Each device will protect one line operating at

3.3 volts. It gives the designer the flexibility to protect

single lines in applications where arrays are not practi-

cal. They may be used to meet the ESD immunity

requirements of IEC 61000-4-2. The combination of

small size and high ESD surge capability makes them

ideal for use in portable applications such as cellular

phones, digital cameras, and MP3 players.

Transient protection for data lines to

IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact)

IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)

Cable Discharge Event (CDE)

Ultra-small package (1.0 x 0.6 x 0.4mm)

Protects one data line

Low reverse current: 10nA typical (VR=3.3V)

Working voltage: 3.3V

Low leakage current

Solid-state silicon-avalanche technology

SLP1006P2T package

Pb-Free, Halogen Free, RoHS/WEEE Compliant

Nominal Dimensions: 1.0 x 0.6 x 0.4 mm

Lead Finish: NiPdAu

Molding compound flammability rating: UL 94V-0

Marking : Marking code

Packaging : Tape and Reel

Cellular Handsets & Accessories

Portable Instrumentation

Keypads, Side Keys, LCD Displays

Notebooks & Desktop Computers

MP3 Players

PRELIMINARY

PROTECTION PRODUCTS

uClamp3311T

Absolute Maximum Rating

Electrical Characteristics (T=25oC)

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MWR

3.3V

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Aμ2=5.39.33.4V

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Am05=8.2V

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MWR

V3.3=10.050.0Aμ

egatloVgnipmalCV

sμ02/8=pt,A1=5.6V

egatloVgnipmalCV

sμ02/8=pt,A5=8V

egatloVgnipmalCDSE

,A4=

sn001/2.0=plt

6.8V

egatloVgnipmalCDSE

,A61=

sn001/2.0=plt

6.5V

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3,2

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Notes

1)ESD gun return path connected to ESD ground plane.

2)Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to

t2 = 90ns.

3) Dynamic resistance calculated from Ipp = 4A to Ipp = 16A

PRELIMINARY

PROTECTION PRODUCTS

uClamp3311T

Typical Characteristics

Non-Repetitive Peak Pulse Power vs. Pulse Time

Normalized Capacitance vs. Reverse Voltage

ESD Clamping (+8kV Contact per IEC 61000-4-2)

Clamping Voltage vs. Peak Pulse Current

TLP Characteristic

ESD Clamping (-8kV Contact per IEC 61000-4-2)

100

1000

0.1 1 10 100

Pulse Duration - tp (µs)

Peak Pul se Power - P

(W)

DR040412-40

0123456

Peak Pulse Current - I

(A)

Clam ping Voltage - V

(V)

Waveform

Parameters:

tr = 8μs

td = 20μs

0 2 4 6 8 10121416

TLP Voltage (V)

TLP Curre nt (A)

Trans mission Line Pul se Tes t

(TLP) Settings:

= 100ns, t

= 0.2ns,

TLP

and V

TLP

averaging window:

= 70ns to t

= 90ns

0.2

0.4

0.6

0.8

1.2

1.4

1.6

00.511.522.533.5

Reverse Voltage - V

(V)

Cj(VR) / Cj(VR=0V)

f = 1 MHz

-10 0 10 20 30 40 50 60 70 80

Time (n s)

Volt age (V)

Measured with 50 Ohm scope input

impedance, 2GHz bandwidth.

Corrected for 50 Ohm, 20dB

attenuator. ESD gun return path

connected to ESD ground plane

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

-10 0 10 20 30 40 50 60 70 80

Time (ns)

Volt age (V)

Measured with 50 Ohm scope input

impedance, 2GHz bandwidth.

Corrected for 50 Ohm, 20dB

attenuator. ESD gun return path

connected to ESD ground plane

PRELIMINARY

PROTECTION PRODUCTS

uClamp3311T

Typical Characteristics

Typical Insertion Loss (S21)

Applications Information

Device Connection Options

The μClamp3311T is designed to protect one data line

operating up to 3.3 volts. It will present a high

impedance to the protected line up to 3.3 volts. It will

“turn on” when the line voltage exceeds 3.5 volts. The

device is bidirectional and may be used on lines where

the signal polarity is above and below ground. These

devices are not recommended for use on dc power

supply lines due to their snap-back voltage

characteristic.

Circuit Board Layout Recommendations for Suppres-

sion of ESD.

Good circuit board layout is critical for the suppression

of ESD induced transients. The following guidelines are

recommended:

zPlace the TVS near the input terminals or connec-

tors to restrict transient coupling.

zMinimize the path length between the TVS and the

protected line.

zMinimize all conductive loops including power and

ground loops.

zThe ESD transient return path to ground should be

kept as short as possible.

zNever run critical signals near board edges.

zUse ground planes whenever possible.

Device Schematic & Pin Configuration

START

. 030 MHz 3

STOP 000

. 000 000 MHz

CH1 S21 LOG 6 dB / REF 0 dB

1: -2.3215 dB

800 MHz

2: -2.5192 dB

900 MHz

3: -3.0194 dB

981.928 MHz

4: -5.6822 dB

1.8 GHz

5: -12.905 dB

2.5 GHz

0 dB

-6 dB

-12 dB

-18 dB

-24 dB

-30 dB

-36 dB

GHz

100

MHz 3

GHz

MHz

1 2

PRELIMINARY

PROTECTION PRODUCTS

uClamp3311T

Applications Information

Semtech Low Voltage TVS

Conventional TVS diodes are silicon avalanche, p-n

junction devices designed to operate at voltages as

low as 5 volts. However, many of today's

semiconductor devices operate at voltages below 5

volts, and thus require lower voltage protection

devices. Unfortunately, for operating voltages below 5

volts, conventional TVS diode technology becomes

impractical. This is due to the adverse effects of high

leakage current and high capacitance caused by the

high impurity concentrations that are needed to lower

the device voltage below 5 volts. Semtech's

proprietary low voltage EPD device technology was

developed to provide protection for today's circuits

operating at voltages below 5 volts. Unlike

conventional TVS diodes, the EPD device utilizes a

complex four layer (n-p-p-n) structure. The

construction of these devices results in very low

operating voltage without the adverse effects

mentioned above.

Device Operation

Since the EPD TVS devices use a 4-layer structure,

they exhibit a slightly different IV characteristic curve

when compared to conventional devices. Figure 1

compares the IV characteristic curves of a low voltage

TVS with a working voltage (VRWM) of 3.3 volts to a

conventional device with a working voltage of 5 volts.

During normal operation, each device represents a

high-impedance to the circuit up to its working voltage.

During an ESD event, they will begin to conduct and

will enter a low impedance state. For the 3.3 volt

device, this happens when the punch-through voltage

(VPT) is exceeded. Unlike a conventional 5 volt device,

the low voltage TVS will exhibit a slight negative

resistance characteristic as it conducts current. This

characteristic aids in lowering the clamping voltage of

the device. However, the device can latch up if a DC

bias voltage is present. The reason being that in order

for the device to turn off, the voltage must fall below

the snap-back voltage (VSB). This value is normally a

minimum of 2.8 volts. If the device is biased above

the 2.8 volts, it will never fall below the snap-back

voltage and will therefore stay in a conducting state.

Figure 1 - 3.3 volt vs. 5 volt TVS IV Curve

-0.03

-0.02

-0.01

0.01

0.02

0.03

0.04

0.05

012345678910

Voltage - V (V)

Current - I (A)

Semtech

5 Volt TVS

VPT

VRWM

VSB

VRWM VBR

Semtech 3.3 Vo lt TVS

Low Voltage TVS

¾Working Voltage (V

RWM

): Maximum rated

operating voltage at which the device will

appear as a high impedance to the

protected circuit.

¾Punch-Through Voltage (V

): Minimum

rated voltage at which the device will

become a low impedance (i.e. Minimum

Turn-On Voltage). When V

is exceeded,

the device will conduct.

¾Snap-Back Voltage (V

): Minimum rated

voltage when the device is in a conducting

state measured at I

= 50mA. This

voltage is less than the working voltage.

The voltage must fall below V

for the

device to turn off.

¾Clamping Voltage (V

): Maximum voltage

drop across the device at a defined peak

pulse current (I

). This is the voltage

seen by the protected circuit during a

transient event.

PRELIMINARY

PROTECTION PRODUCTS

uClamp3311T

uClamp3311T Spice Model

Applications Information - Spice Model

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SIpmA02-E102-E1

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VBIpmA3-E13-E1

CdaraF21-E0121-E1

TTces9-E145.29-E145.2

M--50.050.0

N--1.11.1

GEVe11.111.1

PRELIMINARY

PROTECTION PRODUCTS

uClamp3311T

Outline Drawing - SO-8

Land Pattern - SLP1006P2T

Outline Drawing - SLP1006P2T

THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.

CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR

NOTES:

DIM

MILLIMETERSINCHES

(0.85)

.055

.012

.022

(.033)

1.40

0.55

0.30

DIMENSIONS

COMPANY'S MANUFACTURING GUIDELINES ARE MET.

X .024 0.60

1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).

bxN

A1 .000 .001 .002 0.00 0.03 0.05

2x L

PIN 1 ID

R .002 .004 .006 0.05 0.10 0.15

INCHES

.026 BSC

aaa

.008

.020

DIM

A MIN

.018

.015

0.30

0.70

0.20

0.50

.003

.010

.024

.012

.028

0.08

0.25

0.60

0.65 BSC

MILLIMETERS

MAX

0.55

0.43

DIMENSIONS

MIN

0.45

NOM

.016

.020

MAX

.022

.017 NOM

0.37

0.50

0.40

CO NT ROLL ING DIMENS IO NS A RE IN MILL IMETERS

(

ANGLES IN DEGREES

)

NOTES:

BOTTOM VIEW

TOP VIE W

A B

aaa C SEATING

PL A N E

bbb C A B

D .035 .039 .043 0.90 1.10

1.00

.004 bbb 0.10

PRELIMINARY

PROTECTION PRODUCTS

uClamp3311T

Marking Codes Ordering Information

Carrier Tape Specification

epaT

htdiW )xaM(,BD1DE F P0P2PTW

mm8 mm2.4

)561.(

mm1.0+5.1

mm0.0-

500.+95.0(

)000.-

mm4.0

52.0±

)130.(

01.±057.1

)400.±960.

(

50.0±5.3

)200.±831.(

01.0±0.4

-00.±751.(

1.0±0.4

-00.±751.(

50.0±0.2

)200.±970.(

20.0±452.0

)610.(mm

mm0.8

mm3.0+

mm1.0-

)210.±213.(

3,000 piece, 4mm Pitch Reel

Device Orientation in Tape

Notes:

1) Device is electrically symmetrical

2) Marking will also include line matrix date code

MicroClamp, uClamp and μClamp are trademarks of Semtech

Corporation

rebmuNtraP repytQ

leeR

eziS

TCT.T1133pmalCu000,3hcnI7

TNT.T1133pmalCu000,01hcnI7

0A0B0K

mm01.0-/+96.0mm01.0-/+91.1mm01.0-/+66.0

Pin 1 Location

(Towards Sprocket Holes)

PRELIMINARY

PROTECTION PRODUCTS

uClamp3311T

10,000 piece, 2mm Pitch Reel

Device Orientation in Tape

0A0B0K

mm50.0-/+07.0mm50.0-/+51.1mm50.0-/+55.0

Note: All dimensions in mm unless otherwise specified

Ko Ao

Pin 1 Location

(Towards Sprocket Holes)

Contact Information

Semtech Corporation

Protection Products Division

200 Flynn Road, Camarillo, CA 93012

Phone: (805)498-2111 FAX (805)498-3804