TOSHIBA 2SD2440 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S$D2440 SWITCHING APPLICATION Unit in mm High Breakdown Voltage : Vcpo = 100V (MIN.) 15.8205 | 93.6202 : VEBO = 18 V (MIN.) aT @ Low Saturation Voltage : VCK(sat) = 1.2 V (MAX.) x J 7 S (ig = 5A, Ip = 1A) = re @ High Speed : te=1 ys (TYP.) Ic =5A, Ip = +0.5A) - @e High DC Current Gain 1 F hFR = 200 (MIN.) (Vog = 5V, Ic = 0.5A) ~ | 3 44. on MAXIMUM RATINGS (Ta = 25C) Lo=8.1F CHARACTERISTIC SYMBOL | RATING | UNIT 545202 sas202 |b Collector-Base Voltage VCBO 100 Vv 3.15-0.1 Collector-Emitter Voltage VCEO 60 Vv Emitter-Base Voltage VEBO 18 Vv DC Ic 6 A 1. BASE Collector Current Pulse lop {2 A > COLLECTOR Base Current Ip 2 A 3. EMITTER Collector Power Dissipation Po 40 Ww JEDEC (Te = 25C) EIAJ _ Junction Temperature Tj 150 C TOSHIBA _2-16F1A Storage Temperature Range Tstg 55~150 C - Weight : 5.8 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.|ITYP.|MAX.JUNIT Collector Cut-off Current IcBo Vcp = 100V, In = 0 | 10} A Collector Cut-off Current IckR VcE = 80V, Rpg = 50 0 | 5| mA Emitter Cut-off Current I-FBO VERB = 15V, Ic =0 -|/ 2) A Collector-Emitter Breakdown Voltage| VcKO Ic = 50mA, Ip = 0 60; | Vv DC Current Gain hFRF(1) (Note)| Vor = 5V, Ic =0.5A 200 | | 900 hFK(2) Vck =5V,IG=5A 20| | 100 Collector-Emitter Saturation Voltage VcE (sat) [Ic =5A, IB=1A |] 12] V Base-Emitter Saturation Voltage VBE (sat) [IC =5A, IR =1A |] 2.5| V Transition Frequency fp Vck=10V, IG =0.5A 5 | |MHz Collector Output Capacitance Cob Vcp = 10V, Ig = 0, f= | 71 | | pF IMHz * OUT PUT Turn-On Time |_ ton IN puTJBI a _ 1 2 o . . * I a Switching Time Storage Time tstg rian Ip2 2 4) ps 20 us Vcc = 50V * Ip1 = Ip2g =0.5A Fall Time tf DUTY CYCLE = 1% ; Tt] 8 (Note) : hrp1) Classification GR : 200~400, BL : 300~600, V : 450~900 961001EAAZ @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avaid situations in which a malfunction or failure of a TOSHIBA product could cause lass of human life, bodily injury or damage to property. In developing. your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1999-09-30 1/3TOSHIBA 2SD2440 DC CURRENT GAIN bre COLLECTOR CURRENT Ig (A) BASE-EMITTER SATURATION VOLTAGE VBE(cat) (V) I VCE 16 COMMON EMITTER Te = 28C 12 0.5 0.3 0.1 m m Ip =5mA 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Vor (V) hFE Ic COMMON EMITTER Voce =5V 500 300 100 50 30 10 5 0.01 0.08 0.1 0.3 1 3 10 20 COLLECTOR CURRENT Ic (A) VBE (sat) Ic COMMON EMITTER Ic /Ip =5 0.5 0.3 0.1 0.01 0.08 0.1 0.3 1 3 10 20 COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ig (A) COLLECTOR-EMITTER SATURATION VOLTAGE VcE(sat) (VY) TRANSIENT THERMAL RESISTANCE Ring CO/W) 10] Vor =5V I VBE COMMON EMITTER Te = 585C 0.4 0.8 1.2 1.6 2.0 24 BASE-EMITTER VOLTAGE VpE (V) VCE (sat) Ic COMMON EMITTER Ic/Ip =5 0.03 0.1 0.3 1 3 10 20 COLLECTOR CURRENT Ic (A) Rth (t) tw Te = 25C 10m 100m 1 10 PULSE WIDTH tw (s) 961001EAA2' @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual propert y or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-09-30 2/3TOSHIBA 2SD2440 COLLECTOR CURRENT Ig (A) 30 10 0.5 0. ow 0.1 SAFE OPERATING AREA Ig MAX. (PULSED) I Nine Aw Ig MAX. (DC) S10 ms | Ny TaN DC OPERATION KNX Te = 25C AAA YAN 100 ms>X A_TAS % SINGLE NONREPETITIVE PULSE Te = 25C CURVES MUST BE DERATED LINEARLY WITH INCERASE IN VCEO TEMPERATURE. MAX. 3 5 10 30550 COLLECTOR-EMITTER VOLTAGE Vor (V) 100 1999-09-30 3/3